Results 81 to 90 of about 1,907 (200)

Review of Amorphous Gallium Oxide: From Material Synthesis to Device Applications

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Amorphous gallium oxide (a‐Ga2O3) is reviewed as a promising ultra‐wide‐bandgap material for solar‐blind UV photodetectors. The influence of structural disorder, defect states, and trap‐assisted transport on optical and electronic performance is examined.
Alfred Moore, Ciaran Llewelyn, Dan Lamb, Yaonan Hou, Lijie Li   +4 more
wiley   +1 more source

Reliability Analysis of the 300W GaInP/GaAs/Ge Solar Cell Array Using PCM

Journal of Astronomy and Space Sciences, 2019
Spacecraft requires sufficient power in orbit to perform its mission. So as to comply with system requirements, the sufficient power should be made by a solar cell array by photovoltaic power conversion.
Goo-Hwan Shin, Sejin Kwon, Hu-Seung Lee
doaj   +1 more source

Verification and Mitigation of Proton‐Induced Non‐Ionizing Damage in Perovskite Solar Cells for Space Applications

Advanced Energy Materials, Volume 16, Issue 30, 12 August 2026.
Metal‐halide perovskite solar cells offer high‐efficiency power for orbital missions but suffer from permanent proton‐induced degradation. This work identifies non‐ionizing energy loss (NIEL) as the primary driver of irreversible failure, inducing atomic displacements and microcracks in the high‐fluence regime. Through energy‐tuned mapping and scalable
Jangwon Byun, Sung‐Pil Yoon, Beomjun Park, Sung‐Jun Park, Dong Hoe Kim, Sunwoo Kim, Jin‐Wook Lee, Sangwook Lee, Hyun Suk Jung, Nam‐Gyu Park, Man‐Jong Lee   +10 more
wiley   +1 more source

GaAs wurtzite nanowires for hybrid piezoelectric solar cells

Физика и техника полупроводников, 2018
AbstractThe properties of the hybrid energy sources “piezoelectric nanogenerator-solar cell” based on GaAs nanowires with the wurtzite crystal structure were investigated. Measurements were performed by the bending of the nanowire by the probe of the atomic force microscope with simultaneous recording of short circuit current in dark and ...
P. A. Alekseev, V. A. Sharov, P. Geydt, M. S. Dunaevskiy, I. P. Soshnikov, R. R. Reznik, V. V. Lysak, E. Lähderanta, G. E. Cirlin   +8 more
openaire   +2 more sources

Strain Imaging of GaAs by Stimulated Raman Scattering Microscopy

Journal of Raman Spectroscopy, Volume 57, Issue 8, Page 1387-1391, August 2026.
Telecom‐wavelength stimulated Raman scattering (SRS) microscopy is developed for high‐throughput, nondestructive characterization of gallium arsenide (GaAs). By overcoming optical absorption limits of conventional Raman systems, this technique enables precise visualization of LO phonon frequency variations (< 0.2‐cm −1 precision).
Yuki Sano, Yasuyuki Ozeki
wiley   +1 more source

Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications

Micromachines
This paper examines advances in ultra-high concentration photovoltaics (UHCPV), focusing specifically on vertical multijunction (VMJ) solar cells. The use of gallium arsenide (GaAs) in these cells increases their efficiency in a range of applications ...
Ahmad A. Abushattal, Antonio García Loureiro, Nour El I. Boukortt   +2 more
doaj   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Large Single‐Crystalline n‐Type SnS Flakes by Vapor Transport Growth With In Situ Bi Doping

Small Structures, Volume 7, Issue 8, August 2026.
Controlled doping is often complicated in compound semiconductors that are auto‐doped by native point defects. Here, this problem is addressed for SnS, a layered semiconductor with ubiquitous p‐type doping by Sn vacancies. Substitutional incorporation of Bi switches the material to n‐type conduction with high electron mobility, promising for pn ...
Eli Sutter, Hannu‐Pekka Komsa, Peter Sutter   +2 more
wiley   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

The impact of inserting an InAs quantum dot in the middle subcell of a triple-junction Ga0.51In0.49P/GaAs/Ge solar cell

AIP Advances
In this paper, we have investigated the effect of inserting an InAs quantum dot in the middle subcell of triple-junction solar cells on the power conversion efficiency.
Tewodros Adaro Gatissa, Teshome Senbeta Debela, Belayneh Mesfin Ali   +2 more
doaj   +1 more source