Results 101 to 110 of about 314,945 (334)

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Lifetime laser damage performance of β-Ga2O3 for high power applications

APL Materials, 2018
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium ...
Jae-Hyuck Yoo, Subrina Rafique, Andrew Lange, Hongping Zhao, Selim Elhadj   +4 more
doaj   +1 more source

Enhanced UV detection in GaN-based photodetectors through InN/AlN heterostructure integration and doping-engineered PIN architecture [PDF]

AIP Advances
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal–semiconductor–metal (MSM) photodetectors designed for ultraviolet (UV) applications.
M. Kilin, O. Tanriverdi, B. Karahan, F. Yasar   +3 more
doaj   +1 more source

Gallium phosphide photonic crystal nanocavities in the visible [PDF]

, 2008
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as low as 645 nm ...
Faraon, Andrei, Rivoire, Kelley, Vuckovic, Jelena   +2 more
core  

Review: Insight on Porous Carbon Positive Electrode for Sodium‐Ion Capacitors: Interplay Between Synthesis, Properties, and Performance

Advanced Science, EarlyView.
Sodium ion capacitor (SIC) is currently constrained by the low discharge capacity of commercial activated carbon as positive electrode material. This review provides a holistic summary of research efforts on alternative porous carbon materials for SIC. Image created by the authors with www.biorender.com.
Ademola Adeniji, Adrian Beda, Camélia Matei Ghimbeu   +2 more
wiley   +1 more source

Neutron detection using boron gallium nitride semiconductor material

APL Materials, 2014
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter.
Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano   +4 more
doaj   +1 more source

High temperature epsilon-near-zero and epsilon-near-pole metamaterial emitters for thermophotovoltaics

, 2012
We propose a method for engineering thermally excited far field electromagnetic radiation using epsilon-near-zero metamaterials and introduce a new class of artificial media: epsilon-near-pole metamaterials.
Dewalt, Christopher J., Jacob, Zubin, Molesky, Sean   +2 more
core   +1 more source

Tunable Negative Thermal Expansion in Fe/Cr‐Substituted Nd2Co17 Compounds via Magnetoelastic Coupling

Advanced Science, EarlyView.
This study achieves anisotropic thermal expansion tuning in Nd2(Co1‐xFex)17‐yCry compounds via a magnetoelastic strategy. Variable‐temperature synchrotron X‐ray diffraction reveals that increased Fe content induces switchable lattice responses. Compositional control reduces the volume expansion coefficient αV by 20% (x═0.7) and modulates TC (442–625 K),
Jiayuan Li, Chenfei Qv, Haoran Tu, Qinfen Gu, Wayne D. Hutchison, Stewart J. Campbell, Zhenxiang Cheng, Wenquan Wang, Jianli Wang   +8 more
wiley   +1 more source

Nuclear Spin‐Free 70Ge/28Si70Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers

Advanced Science, EarlyView.
Hyperfine coupling to 29Si$^{29}{\rm Si}$ and 73Ge$^{73}{\rm Ge}$ nuclear spins limits hole spin‐qubit coherence in Ge heterostructures. We demonstrate device‐grade, nuclear‐spin‐free 70Ge$^{70}{\rm Ge}$/28Si70Ge$^{28}{\rm Si}^{70}{\rm Ge}$ quantum wells grown on industrial SiGe buffers with minimal use of enriched precursors.
Patrick Daoust, Nicolas Rotaru, Debojyoti Biswas, Sebastian Koelling, Eloise Rahier, Alexis Dubé‐Valade, Patrick Del Vecchio, Marcus S. Edwards, Mukhlasur Tanvir, Ebrahim Sajadi, Joe Salfi, Oussama Moutanabbir   +11 more
wiley   +1 more source

Integration and performance optimization of gallium nitride barrier micro nano electromechanical systems in intelligent agricultural sensor networks

Measurement: Sensors
This study aims to explore the application of gallium nitride (GaN) barrier in hardware optimization of micro nano scale electromechanical systems (MEMS), particularly its ability to overcome the limitations of traditional hardware in high-temperature ...
Ji Gu
doaj   +1 more source