Results 191 to 200 of about 314,945 (334)

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry. [PDF]

open access: yesMaterials (Basel), 2021
Schiavon D   +6 more
europepmc   +1 more source

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

open access: yesAdvanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida   +16 more
wiley   +1 more source

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. [PDF]

open access: yesNat Electron
Kumar AS   +7 more
europepmc   +1 more source

Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide. [PDF]

open access: yesCommun Chem, 2022
Li J   +13 more
europepmc   +1 more source

Z‐Scheme Water Splitting Systems Based on Solid‐State Electron Conductors

open access: yesAdvanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
This review examines the latest advances in Z‐scheme overall water splitting (OWS) systems for solar hydrogen production. These systems consist of suspended or immobilized hydrogen evolution photocatalysts (HEPs) and oxygen evolution photocatalysts (OEPs).
Chen Gu   +3 more
wiley   +1 more source

Defect Analysis of the β– to γ–Ga2O3 Phase Transition

open access: yesAdvanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
The role of defects at all the relevant stages of the β$\beta$‐ to γ$\gamma$‐Ga2O3 polymorph transition is investigated using a multi method approach. The positron annihilation spectroscopy based results show that the defect density decreases after the transition, and that changes in defect configuration within the γ phase occur with increasing ...
Umutcan Bektas   +9 more
wiley   +1 more source

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

open access: yesAdvanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra   +8 more
wiley   +1 more source

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