Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry. [PDF]
Schiavon D +6 more
europepmc +1 more source
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida +16 more
wiley +1 more source
Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. [PDF]
Kumar AS +7 more
europepmc +1 more source
Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide. [PDF]
Li J +13 more
europepmc +1 more source
Z‐Scheme Water Splitting Systems Based on Solid‐State Electron Conductors
This review examines the latest advances in Z‐scheme overall water splitting (OWS) systems for solar hydrogen production. These systems consist of suspended or immobilized hydrogen evolution photocatalysts (HEPs) and oxygen evolution photocatalysts (OEPs).
Chen Gu +3 more
wiley +1 more source
Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit. [PDF]
Chang Y +5 more
europepmc +1 more source
Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates. [PDF]
Xu L, Cao Y, Song T, Xu C.
europepmc +1 more source
Defect Analysis of the β– to γ–Ga2O3 Phase Transition
The role of defects at all the relevant stages of the β$\beta$‐ to γ$\gamma$‐Ga2O3 polymorph transition is investigated using a multi method approach. The positron annihilation spectroscopy based results show that the defect density decreases after the transition, and that changes in defect configuration within the γ phase occur with increasing ...
Umutcan Bektas +9 more
wiley +1 more source
Ab Initio Study on Dopant Relaxation Mechanism in Ti and Ce Cationically Substituted in Wurtzite Gallium Nitride. [PDF]
Alkhedher M +3 more
europepmc +1 more source
Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra +8 more
wiley +1 more source

