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Discussions on the semiconductor-based galvanic isolation
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014Jin Wang, Xuan Zhang, Lixing Fu
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A Three-Channel Package-Scale Galvanic Isolation Interface for Wide Bandgap Gate Drivers [PDF]
This article presents the design of a three-channel package-scale galvanic isolation interface for SiC and GaN power switching converters. The isolation interface consists of two side-by-side co-packaged chips fabricated in a low-cost 0.32-μm bipolar ...
Egidio Ragonese +2 more
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This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation ...
Egidio Ragonese +2 more
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Modeling and Characterization of cMUT-based Devices Applied to Galvanic Isolation [PDF]
This paper describes a new way of using cMUT technology: galvanic isolation for power electronics. These devices work like acoustic transformers, except that piezoelectricity is replaced by cMUT technology.
Daniel Alquier, Audren Boulmé
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Galvanically isolated SpaceWire
2014 International SpaceWire Conference (SpaceWire), 2014The physical signaling layer for SpaceWire is specified in ECSS-E-ST-50-12C as LVDS per ANSI/TIA/EIA-644. LVDS is a current mode, differential interface that offers several benefits over other types of physical interfaces particularly in the areas of noise rejection, electromagnetic noise generation, and power supply decoupling.
Michael Epperly, Steven Torno
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Semiconductor-based galvanic isolation
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states.
Xuan Zhang +3 more
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Three-Channel Fully Integrated Galvanic Isolation Interface in GaN Technology
This paper presents a three-channel galvanic isolation interface in GaN technology. Driver, diagnostic, and control channels have been implemented in a two-die integrated system to perform an isolation interface for a high-performance power switching ...
Nunzio Spina +2 more
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Session 25 overview: GaN drivers and galvanic isolators
2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017Gallium-Nitride (GaN) power devices have garnered a lot of attention for their reduced switching losses leading to small-form-factor high-frequency switching converters. However, issues related to reliable GaN gate driving, signal and power isolation with high common-mode immunity, and reduced electromagnetic interference (EMI) need special attention ...
Shuichi Nagai +2 more
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Giant magnetoresistive based galvanically isolated voltage measurement
2014 IEEE International Workshop on Applied Measurements for Power Systems Proceedings (AMPS), 2014Nowadays direct current (DC) is much more widely used than a decade ago. Not only in the well-known high voltage direct current (HVDC) transmission but also as DC powered marine system, DC data center and DC fast charging system for electric vehicles. DC is now challenging the alternative current (AC) in a large variety of fast growing markets. However
Fei Xie +2 more
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A Capacitive Galvanically Isolated Full-Bridge Converter
IEEE Transactions on Transportation ElectrificationThis paper proposes a transformerless, capacitively isolated converter based on a full-bridge topology with phase shift control. Compared to existing capacitively isolated converters, the proposed design offers the advantage of zero mean voltage across the isolating capacitors, thereby reducing voltage stress.
Pierpaolo Granello +2 more
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