Results 251 to 260 of about 1,088,192 (320)

Modulated Interactions Induced by Cyano‐Modified Wide‐Bandgap Small‐Molecule Acceptors Enables High‐Performance Ternary Organic Photovoltaics

open access: yesAdvanced Science, EarlyView.
A novel wide‐bandgap acceptor, UF‐BCN, is designed where cyano substitution significantly enhances surface energy and HOMO levels. When incorporated into a ternary system with D18:BTP‐eC9, UF‐BCN achieves a high‐power conversion efficiency of 19.34% by forming a mixed acceptor phase with strong intermolecular interactions, highlighting the role of the ...
Yuanyuan Zhang   +16 more
wiley   +1 more source

Bioinspired Prolactin Pulse Release from Responsive Microneedles for Inhibiting Fatty Liver Formation

open access: yesAdvanced Science, EarlyView.
Inspired by the prolactin secretion profile under normal physiological conditions, biomimetic prolactin‐releasing microneedles are designed. Under the control of near infrared (NIR), these responsive microneedles facilitate pulsed release of prolactin to inhibit fatty liver formation.
Hongli Yin   +6 more
wiley   +1 more source

Biomolecular Interaction Prediction: The Era of AI

open access: yesAdvanced Science, EarlyView.
This review offers a thorough examination of recent progress in deep learning for predicting biomolecular interactions, including those involving proteins, nucleic acids, and small molecules. It covers data processing strategies, representative model architectures, and evaluation metrics, while highlighting current methodological limitations.
Haoping Wang, Xiangjie Meng, Yang Zhang
wiley   +1 more source

p-Type Surface Defects on n-GaN Nanorods. [PDF]

open access: yesNano Lett
Sadhujan S   +14 more
europepmc   +1 more source

Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

open access: yesAdvanced Electronic Materials, EarlyView.
AlGaN/GaN‐based SBDs with a metal/Al2O3/GaN (MIS) Schottky contact are designed and fabricated, which demonstrate a three‐order reduction in leakage current and achieve a breakdown voltage of ≈1100 V. It also introduces refined physical models for more accurate simulations of GaN‐based power devices on Si substrates. The revised models predict enhanced
Jingting He   +10 more
wiley   +1 more source

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