Results 71 to 80 of about 215,845 (322)

Beyond Order: Perspectives on Leveraging Machine Learning for Disordered Materials

open access: yesAdvanced Engineering Materials, EarlyView.
This article explores how machine learning (ML) revolutionizes the study and design of disordered materials by uncovering hidden patterns, predicting properties, and optimizing multiscale structures. It highlights key advancements, including generative models, graph neural networks, and hybrid ML‐physics methods, addressing challenges like data ...
Hamidreza Yazdani Sarvestani   +4 more
wiley   +1 more source

Unipolar vertical transport in GaN/AlGaN/GaN heterostructures [PDF]

open access: yesApplied Physics Letters, 2013
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height.
Yuh-Renn Wu   +5 more
openaire   +4 more sources

A General Cyanine‐Based Platform for Designing Robust Dual‐Channel Near‐Infrared Fluorescent and Photoacoustic Probes

open access: yesAdvanced Functional Materials, EarlyView.
The study presents a general cyanine‐based platform CySN for designing robust dual‐channel near‐infrared fluorescent (NIRF) and photoacoustic (PA) probes with high ratiometric signals change. CySN enables the construction of highly sensitive and selective dual‐channel NIRF/PA probes for both small molecule and enzyme biomarkers (H2O2, esterase ...
Pingzhou Wu   +14 more
wiley   +1 more source

Active Hydrogen for Electrochemical Ammonia Synthesis

open access: yesAdvanced Functional Materials, EarlyView.
This review provides a comprehensive overview of the active hydrogen (H*) for electrochemical ammonia synthesis with particular attention given to the regulation of H* generation and consumption to suppress the competition of hydrogen evolution reaction and enhance the yield, selectivity, and Faradaic efficiency of ammonia.
Guoqiang Gan, Guo Hong, Wenjun Zhang
wiley   +1 more source

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

open access: yesMicromachines, 2020
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu   +2 more
doaj   +1 more source

Recent Advances in Highly Luminescent Carbon Dots

open access: yesAdvanced Functional Materials, EarlyView.
Here, a comprehensive summary of the advancements is provided in highly luminescent carbon dots across various luminescence bands since their discovery in 2004. It systematically covers the synthesis, structural characteristics, preparation strategies, and essential purification of these carbon dots, along with their applications in efficient ...
Yupeng Liu   +6 more
wiley   +1 more source

Unbiased Auxiliary Classifier GANs with MINE [PDF]

open access: yesarXiv, 2020
Auxiliary Classifier GANs (AC-GANs) are widely used conditional generative models and are capable of generating high-quality images. Previous work has pointed out that AC-GAN learns a biased distribution. To remedy this, Twin Auxiliary Classifier GAN (TAC-GAN) introduces a twin classifier to the min-max game.
arxiv  

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

Cloud Removal with Fusion of High Resolution Optical and SAR Images Using Generative Adversarial Networks

open access: yesRemote Sensing, 2020
The existence of clouds is one of the main factors that contributes to missing information in optical remote sensing images, restricting their further applications for Earth observation, so how to reconstruct the missing information caused by clouds is ...
Jianhao Gao   +4 more
doaj   +1 more source

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

open access: yesAIP Advances
This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates.
Weiyi Jin   +7 more
openaire   +2 more sources

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