Results 71 to 80 of about 215,845 (322)
Beyond Order: Perspectives on Leveraging Machine Learning for Disordered Materials
This article explores how machine learning (ML) revolutionizes the study and design of disordered materials by uncovering hidden patterns, predicting properties, and optimizing multiscale structures. It highlights key advancements, including generative models, graph neural networks, and hybrid ML‐physics methods, addressing challenges like data ...
Hamidreza Yazdani Sarvestani+4 more
wiley +1 more source
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures [PDF]
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height.
Yuh-Renn Wu+5 more
openaire +4 more sources
The study presents a general cyanine‐based platform CySN for designing robust dual‐channel near‐infrared fluorescent (NIRF) and photoacoustic (PA) probes with high ratiometric signals change. CySN enables the construction of highly sensitive and selective dual‐channel NIRF/PA probes for both small molecule and enzyme biomarkers (H2O2, esterase ...
Pingzhou Wu+14 more
wiley +1 more source
Active Hydrogen for Electrochemical Ammonia Synthesis
This review provides a comprehensive overview of the active hydrogen (H*) for electrochemical ammonia synthesis with particular attention given to the regulation of H* generation and consumption to suppress the competition of hydrogen evolution reaction and enhance the yield, selectivity, and Faradaic efficiency of ammonia.
Guoqiang Gan, Guo Hong, Wenjun Zhang
wiley +1 more source
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu+2 more
doaj +1 more source
Recent Advances in Highly Luminescent Carbon Dots
Here, a comprehensive summary of the advancements is provided in highly luminescent carbon dots across various luminescence bands since their discovery in 2004. It systematically covers the synthesis, structural characteristics, preparation strategies, and essential purification of these carbon dots, along with their applications in efficient ...
Yupeng Liu+6 more
wiley +1 more source
Unbiased Auxiliary Classifier GANs with MINE [PDF]
Auxiliary Classifier GANs (AC-GANs) are widely used conditional generative models and are capable of generating high-quality images. Previous work has pointed out that AC-GAN learns a biased distribution. To remedy this, Twin Auxiliary Classifier GAN (TAC-GAN) introduces a twin classifier to the min-max game.
arxiv
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu+3 more
wiley +1 more source
The existence of clouds is one of the main factors that contributes to missing information in optical remote sensing images, restricting their further applications for Earth observation, so how to reconstruct the missing information caused by clouds is ...
Jianhao Gao+4 more
doaj +1 more source
Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates.
Weiyi Jin+7 more
openaire +2 more sources