Results 61 to 70 of about 339,375 (294)
CoRR, 2017 Published at NIPS 2017. v2: added inception score table & plot update, relation to f-gan, illustration (Figure 1).
Youssef Mroueh, Tom Sercu
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
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Proceedings of the 1st ACM Workshop on Data Privacy and Federated Learning Technologies for Mobile Edge Network, 2022 Mobile devices and the immense amount and variety of data they generate are key enablers of machine learning (ML)-based applications. Traditional ML techniques have shifted toward new paradigms such as federated (FL) and split learning (SL) to improve the protection of user's data privacy. However, these paradigms often rely on server(s) located in the
Pranvera Kortoçi +7 more
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Advanced Functional Materials, EarlyView.Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
Improving the Performance of III-Nitride Emitters by Nanostructure Fabrication and Surface Plasmon Coupling [PDF]
, 2013 III-Nitride based LEDs are quickly being adopted as the next generation in almost all lighting applications due to their potential ability to emit throughout the visible wavelength spectrum.
Renwick, Paul
core +4 more sources
ETRI JournalThe effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang +11 more
doaj +1 more source
Integrated design of GaN-on-Si power devices and drivers
Dianzi Jishu YingyongAn all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
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Heat and Fluid Flow in Solvothermal Autoclave for Single-Crystal Growth Process
Journal of Thermal Science and Technology, 2012 We report and discuss an experiment and numerical simulation of heat transfer by natural convection inside an autoclave for the solvothermal growth of bulk crystalline GaN.
Yoshio MASUDA +3 more
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Communication et études de l’IA : mémoire du futur
Interfaces Numériques, 2020 Pour aborder la question de la mémoire du futur, ce texte se centre sur un récit de vie que nous avons recueilli auprès de Grégory Chatonsky, artiste dont la production est fortement imprégnée par les outils d’intelligence artificielle. Parmi ces outils,
Franck Renucci +2 more
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Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2023 A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the ...
V. S. Volcheck, V. R. Stempitsky
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