Results 71 to 80 of about 122,529 (265)

Sobolev GAN

open access: yesCoRR, 2017
We propose a new Integral Probability Metric (IPM) between distributions: the Sobolev IPM. The Sobolev IPM compares the mean discrepancy of two distributions for functions (critic) restricted to a Sobolev ball defined with respect to a dominant measure $μ$.
Mroueh, Y.   +4 more
openaire   +4 more sources

Intelligent Orthopedics: Machine Learning in Diagnosis of Bone Disease, Implants, and Bone Health Monitoring

open access: yesAdvanced Healthcare Materials, EarlyView.
Efficient recovery from traumatic or degenerative diseases is a great challenge, even after all the advancements in bone and cartilage regeneration. Machine learning (ML) algorithms have presented opportunities to enhance these aspects by accurately analyzing imaging data.
Maryam Kamaei   +9 more
wiley   +1 more source

APE-GAN: Adversarial Perturbation Elimination with GAN [PDF]

open access: yesICASSP 2019 - 2019 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP), 2019
Although Deep Neural Networks could achieve state-of-the-art performance while recongnizing images, they often suffer a tremendous defeat from adversarial examples–inputs generated by utilizing imperceptible but intentional perturbations to samples from the datasets.
Guoqing Jin   +4 more
openaire   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Dualing GANs

open access: yesCoRR, 2017
Generative adversarial nets (GANs) are a promising technique for modeling a distribution from samples. It is however well known that GAN training suffers from instability due to the nature of its maximin formulation. In this paper, we explore ways to tackle the instability problem by dualizing the discriminator.
Yujia Li 0001   +3 more
openaire   +3 more sources

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

open access: yesAdvanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena   +3 more
wiley   +1 more source

From Behavior to Dynamics: Decoding Carrier Roles in Cu‐based Photocathodes for Solar‐Driven CO2 Reduction

open access: yesAdvanced Materials, EarlyView.
The performance of Cu‐based photocathodes in photoelectrochemical CO2 reduction is not governed by catalytic sites alone, but by the dynamic journey of photogenerated carriers. This review decodes how carrier generation, recombination, transport, accumulation, extraction, and electrolyte coupling shape catalytic activity, selectivity, and stability ...
Yi‐Cheng Wang   +5 more
wiley   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

open access: yesOptics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui   +9 more
openaire   +2 more sources

Electrically Coded Retinomorphic Spectrophotodetector

open access: yesAdvanced Materials, EarlyView.
Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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