Results 71 to 80 of about 339,375 (294)

Bayesian GAN

CoRR, 2017
Updated to the version that appears at Advances in Neural Information Processing Systems 30 (NIPS ...
Yunus Saatci, Andrew Gordon Wilson
openaire   +3 more sources

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Advanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca   +10 more
wiley   +1 more source

Исследования остаточных упругих напряжений в многопериодных сверхрешетках GaN/AlN, выращенных на подложке SiC/Si

Конденсированные среды и межфазные границы
Впервые методом хлорид-гидридной эпитаксии на гибридной подложке SiC/Si, синтезированной методом согласованного замещения атомов, сформирована многослойная гетероструктура, состоящая из периодически расположенных слоев GaN и AlN.
Павел Владимирович Середин, Шукрилло Шамсидинович Шарофидинов, Дмитрий Леонидович Голощапов, Никита Сергеевич Буйлов, Константин Александрович Еремеев, Шаира Абдувалиевна Юсупова, Сергей Арсеньевич Кукушкин   +6 more
doaj   +1 more source

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Micromachines, 2020
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang   +2 more
doaj   +1 more source

APTES‐Mediated Ti‐Squarate MOF/n‐GaN Nanowire Photoanodes for Efficient Photoelectrochemical Water Splitting

Advanced Functional Materials, EarlyView.
The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh, Sergio Carrasco, Sooyeon Ra, Seok‐Ho Seo, Chandran Bagavath, Sung‐Un Kim, Min‐Seok Lee, Jong‐Su Kim, Miriam Vos‐Gracia, Dan Na, Kyung‐Hwan Jin, Sangmin An, Dong Ick Son, Cheul‐Ro Lee, Patricia Horcajada, Yong‐Ho Ra   +15 more
wiley   +1 more source

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs [PDF]

, 2005
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure.
Zakheіm А. L., Malyutenko O. Y., Zinovchuk A. V., Malyutenko V. K.   +3 more
core   +1 more source

Evaluating the Performance of Generative Adversarial Network, Synthetic Minority Oversampling Technique, and Adaptive Synthetic Sampling in Marine Diesel Engine Fault Diagnosis using Vibration Data

Engineered Science
Machine learning-driven fault diagnosis of marine diesel engines is a major research focus, challenged by scarce, insufficient fault data. This study explores vibration data under five conditions: normal operation, single-cylinder ignition failure ...
Zhijun Chen, Ziyu Xiao, Zhongjun Wang, Pengcheng Wang, Jie Wang, Yijie Qu, Xiong Bao, Xiaofeng Guo   +7 more
doaj   +1 more source

AE-CGAN Model based High Performance Network Intrusion Detection System

Applied Sciences, 2019
In this paper, a high-performance network intrusion detection system based on deep learning is proposed for situations in which there are significant imbalances between normal and abnormal traffic.
JooHwa Lee, KeeHyun Park
doaj   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

Advanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena, J. Terence Blaskovits, Kun‐Han Lin, Denis Andrienko   +3 more
wiley   +1 more source

X-band load-insensitive high-efficiency power amplifier MMIC using asymmetric matching network

Dianzi Jishu Yingyong
To address antenna impedance variations, a high-efficiency and load-insensitive power amplifier operating in the 8~12 GHz band is designed using 0.25 μm GaN HEMT technology.
Dong Yifang, Liu Junfeng, Shao Yuwei, Yu Xuming, Guo Runnan, Wang Youyang, Gu Wenhua   +6 more
doaj   +1 more source