Results 71 to 80 of about 1,056,535 (282)

Nucleation and Growth of GaN/AlN Quantum Dots

, 2003
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage.
B. Daudin, C. Adelmann, D. Bimberg, G. A. D. Briggs, H. Kitabayashi, I. Daruka, R. A. Oliver, R. E. Rudd   +7 more
core   +1 more source

Polymer Interface Enables Reversible Quasi‐Solid Sulfur Conversion in Sodium‐Sulfur Batteries

Advanced Functional Materials, EarlyView.
The polymer interface enables a stable quasi‐solid sulfur conversion pathway in room‐temperature Na─S batteries. The coating regulates Na+ transport, stabilizes the cathode–electrolyte interphase, and accommodates mechanical stress, suppressing electrolyte decomposition and sulfur migration, thereby improving reaction uniformity, reducing polarization,
Reza Andaveh, Ying Zhao, Enzhong Jin, Zixin Zhang, Vinicius Martins, Parham Pirayesh, Yi Gan, Yi Yuan, Yijia Wang, Frederick Benjamin Holness, Changhong Cao, Jun Song, Yang Zhao   +12 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

, 2004
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and ...
Dilley, N. R., Gu, Lin, Liu, H. X., Montes, L., Newman, N., Simmonds, M. B., Singh, R. K., Smith, David J., Wu, Stephen Y.   +8 more
core   +1 more source

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

Advanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

ClothGAN: generation of fashionable Dunhuang clothes using generative adversarial networks

Connection Science, 2021
Clothing is one of the symbols of human civilisation. Clothing design is an art form that combines practicality and artistry. The Dunhuang clothes culture has a long history which represents ancient Chinese aesthetics.
Qiang Wu, Baixue Zhu, Binbin Yong, Yongqiang Wei, Xuetao Jiang, Rui Zhou, Qingguo Zhou   +6 more
doaj   +1 more source

Unipolar vertical transport in GaN/AlGaN/GaN heterostructures [PDF]

Applied Physics Letters, 2013
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height.
D. N. Nath, Z. C. Yang, C.-Y. Lee, P. S. Park, Y.-R. Wu, S. Rajan   +5 more
openaire   +2 more sources

Autoencoders and Generative Adversarial Networks for Imbalanced Sequence Classification

, 2020
Generative Adversarial Networks (GANs) have been used in many different applications to generate realistic synthetic data. We introduce a novel GAN with Autoencoder (GAN-AE) architecture to generate synthetic samples for variable length, multi-feature ...
Ger, Stephanie, Klabjan, Diego
core  

Freeform Fabrication of Layered Halide Perovskite Nanowire Heterojunctions

Advanced Materials, EarlyView.
‘All‐at‐once’ freeform fabrication of layered perovskite nanowire heterojunctions is realized by 3D printing employing meniscus‐guided crystallization. The integration of nanoscale additive manufacturing with layered halide perovskites will provide a versatile platform to freely design and realize highly stable perovskite‐based optoelectronic ...
Sixi Cao, Yu Liu, Zhuofei Gan, Shiqi Hu, Jihyuk Yang, Zhuoran Wang, Mingjian Yuan, Wen‐Di Li, Ji Tae Kim   +8 more
wiley   +1 more source

Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 2004
Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures.
JA. Grenko, CL. Reynolds, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis, Z. Sitar   +6 more
openaire   +1 more source