Results 51 to 60 of about 276,670 (296)
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
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A Dislocation Perspective on Strength and Toughness in Ceramics
Advanced Engineering Materials, EarlyView.Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley +1 more source
CoRR, 2018 A longstanding problem in machine learning is to find unsupervised methods that can learn the statistical structure of high dimensional signals. In recent years, GANs have gained much attention as a possible solution to the problem, and in particular have shown the ability to generate remarkably realistic high resolution sampled images.
Eitan Richardson, Yair Weiss
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Ferroelectricity in Antiferromagnetic Wurtzite Nitrides
Advanced Functional Materials, EarlyView.We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa +3 more
wiley +1 more source
ETRI JournalThe effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang +11 more
doaj +1 more source
Integrated design of GaN-on-Si power devices and drivers
Dianzi Jishu YingyongAn all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
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Implementasi Deep Convolutional Generative Adversarial Network untuk Pewarnaan Citra Grayscale
JuTISI (Jurnal Teknik Informatika dan Sistem Informasi), 2022 Proses menambahkan warna pada citra grayscale diperlukan agar perbaikan pada citra dapat dilakukan secara cepat dan tanpa pengetahuan khusus. Pewarnaan citra menggunakan metode Deep Convolutional Generative Adversarial Network (DCGAN) dan metode ...
Muhammad Ricky, Muhammad Ezar Al Rivan
doaj +1 more source
Poly-GAN: Multi-conditioned GAN for fashion synthesis [PDF]
Neurocomputing, 2020 We present Poly-GAN, a novel conditional GAN architecture that is motivated by Fashion Synthesis, an application where garments are automatically placed on images of human models at an arbitrary pose. Poly-GAN allows conditioning on multiple inputs and is suitable for many tasks, including image alignment, image stitching, and inpainting.
Nilesh Pandey, Andreas E. Savakis
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Trapping and leakage mechanisms in GaN devices
, 2022 reservedIn questo lavoro intendiamo discutere i risultati riguardo l'instabilità della tensione di soglia e i fenomeni di leakage su HEMT con struttura di gate p-GaN/AlGaN/GaN.
BENATO, ANDREA
core
Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source