Results 51 to 60 of about 1,056,535 (282)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Micromachines, 2020
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang   +2 more
doaj   +1 more source

Comparing the Effect of Semi‐Immersive Virtual Reality, Computerized Cognitive Training, and Traditional Rehabilitation on Cognitive Function in Multiple Sclerosis: A Randomized Clinical Trial

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background Cognitive impairment is a common non‐motor symptom in Multiple Sclerosis (MS), negatively affecting autonomy and Quality of Life (QoL). Innovative rehabilitation strategies, such as semi‐immersive virtual reality (VR) and computerized cognitive training (CCT), may offer advantages over traditional cognitive rehabilitation (TCR ...
Maria Grazia Maggio, Desiree Latella, Lilla Bonanno, Paulo Cezar Rocha dos Santos, Marcos Maldonado‐Díaz, Meir Plotnik, Rosaria De Luca, Angelo Quartarone, Rocco Salvatore Calabrò   +8 more
wiley   +1 more source

Adaptive Contrast Enhancement for Digital Radiographic Images using Image-to-Image Translation

Current Directions in Biomedical Engineering
Digital radiography in medicine is a widely used imaging method for obtaining visual information about the inside of a body. To prepare the acquired raw image for diagnostic evaluation, the contrast must be adjusted depending on the examined part of the ...
Popp Ann-Kathrin, Schumacher Mona, Himstedt Marian   +2 more
doaj   +1 more source

AE-CGAN Model based High Performance Network Intrusion Detection System

Applied Sciences, 2019
In this paper, a high-performance network intrusion detection system based on deep learning is proposed for situations in which there are significant imbalances between normal and abnormal traffic.
JooHwa Lee, KeeHyun Park
doaj   +1 more source

Screening Routine Clinical Notes for Epilepsy Surgery Candidates Using Large Language Models

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Epilepsy surgery is severely underutilized despite proven efficacy, with substantial under‐referral of eligible patients in routine clinical practice. This study evaluated the potential role of large language models (LLMs) as decision‐support tools for screening unstructured clinical notes to identify epilepsy surgery candidates and ...
Uriel Fennig, Nadav Amir, Maya Schiller, Roni Loebenstein, Johnatan Nissan, Marina Boxer, Shany Guly Gofrit, Gal Goshen, Sándor Beniczky, Nicola Maggio   +9 more
wiley   +1 more source

Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer [PDF]

Archives of Metallurgy and Materials
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite.
Hogyoung Kim, Ye Bin Won, Byung Joon Choi   +2 more
doaj   +1 more source

Offsets and polarization at strained AlN/GaN polar interfaces

, 1996
The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface.
Bernardini, Fabio, Fiorentin, Vincenzo, Vanderbilt, David   +2 more
core   +2 more sources

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications

ETRI Journal
The effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang, Hyeon-Seok Jeong, Hyun-Wook Jung, Su-Min Choi, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Dong Min Kang, Dae-Hyun Kim, Jong-Won Lim   +11 more
doaj   +1 more source

Integrated design of GaN-on-Si power devices and drivers

Dianzi Jishu Yingyong
An all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
doaj   +1 more source