Results 51 to 60 of about 322,248 (290)
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2023 A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the ...
V. S. Volcheck, V. R. Stempitsky
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2018 IEEE Winter Conference on Applications of Computer Vision (WACV), 2018 We present Generative Adversarial Networks (GANs), in which the symmetric property of the generated images is controlled. This is obtained through the generator network's architecture, while the training procedure and the loss remain the same. The symmetric GANs are applied to face image synthesis in order to generate novel faces with a varying amount ...
Peleg, Irad, Wolf, Lior
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Proceedings of the 1st ACM Workshop on Data Privacy and Federated Learning Technologies for Mobile Edge Network, 2022 Mobile devices and the immense amount and variety of data they generate are key enablers of machine learning (ML)-based applications. Traditional ML techniques have shifted toward new paradigms such as federated (FL) and split learning (SL) to improve the protection of user's data privacy. However, these paradigms often rely on server(s) located in the
Pranvera Kortoçi +7 more
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Trapping and leakage mechanisms in GaN devices
, 2022 reservedIn questo lavoro intendiamo discutere i risultati riguardo l'instabilità della tensione di soglia e i fenomeni di leakage su HEMT con struttura di gate p-GaN/AlGaN/GaN.
BENATO, ANDREA
core
Advanced Engineering Materials, EarlyView.A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič +7 more
wiley +1 more source
CoRR, 2017 Published at NIPS 2017. v2: added inception score table & plot update, relation to f-gan, illustration (Figure 1).
Youssef Mroueh, Tom Sercu
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
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Advanced Engineering Materials, EarlyView.Reproduction of stacking fault energy calculations from literature with a semi‐automated large language model‐assisted extraction procedure: extraction of simulation protocol, atomistic structures, computational parameters, and reported results, ontology alignment, knowledge graph construction and, finally, recomputation forvalidation.
Sepideh Baghaee Ravari +5 more
wiley +1 more source
ETRI JournalThe effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang +11 more
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Integrated design of GaN-on-Si power devices and drivers
Dianzi Jishu YingyongAn all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
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