Results 31 to 40 of about 1,056,535 (282)
Optics Express, 2014 N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work.
Kyaw, Z. +12 more
openaire +6 more sources
Proceedings of the 1st ACM Workshop on Data Privacy and Federated Learning Technologies for Mobile Edge Network, 2022 Mobile devices and the immense amount and variety of data they generate are key enablers of machine learning (ML)-based applications. Traditional ML techniques have shifted toward new paradigms such as federated (FL) and split learning (SL) to improve the protection of user's data privacy. However, these paradigms often rely on server(s) located in the
Kortoçi, Pranvera +7 more
openaire +2 more sources
(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer [PDF]
, 2007 Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process ...
Bejtka, K. +9 more
core +1 more source
Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer [PDF]
, 2019 AlxGa1-xN/GaN superlattice electron blocking layers (EBLs) with gradually decreasing Al composition toward the p-type GaN layer are introduced to GaInN-based high-power light-emitting diodes (LEDs).
David Meyaard +8 more
core +1 more source
DC-DC Converter Design Issues for High-Efficient DC Microgrid
Communications, 2019 In this article, the electrical properties, as well as the economic aspects of the modular and non-modular solution of the DC-DC photovoltaic converter for DC microgrid subsystem, are described.
Michal Frivaldsky, Jan Morgos
doaj +1 more source
Electron diffusion length and lifetime in p-type GaN [PDF]
, 1998 We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z. +3 more
core +1 more source
Remote Sensing, 2020 The existence of clouds is one of the main factors that contributes to missing information in optical remote sensing images, restricting their further applications for Earth observation, so how to reconstruct the missing information caused by clouds is ...
Jianhao Gao +4 more
doaj +1 more source
Active Damping in Series Connected Power Modules with Continuous Output Voltage
Power Electronics and Drives, 2021 This paper presents a modular and scalable power electronics concept for motor control with continuous output voltage. In contrast to multilevel concepts, modules with continuous output voltage are connected in series.
Ulmer Sabrina +2 more
doaj +1 more source
Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film [PDF]
, 2006 A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature.
Akasaka, Y. +8 more
core +3 more sources
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
, 2011 We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance ...
Bajaj, Sanyam +5 more
core +1 more source