Results 31 to 40 of about 276,670 (296)

H-GAN: the power of GANs in your Hands [PDF]

2021 International Joint Conference on Neural Networks (IJCNN), 2021
Paper accepted at The International Joint Conference on Neural Networks (IJCNN ...
Sergiu Oprea, Giorgos Karvounas, Pablo Martinez-Gonzalez, Nikolaos Kyriazis, Sergio Orts-Escolano, Iason Oikonomidis, Alberto Garcia-Garcia, Aggeliki Tsoli, José García Rodríguez 0001, Antonis A. Argyros   +9 more
openaire   +2 more sources

CCcenR_glu

, 2006
C. crescentus CenR, glucose depletion .<strong>Tilt Series Date:</strong> 2006-07-06</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> < ...
Gan, Lu
core   +5 more sources

DC-DC Converter Design Issues for High-Efficient DC Microgrid

Communications, 2019
In this article, the electrical properties, as well as the economic aspects of the modular and non-modular solution of the DC-DC photovoltaic converter for DC microgrid subsystem, are described.
Michal Frivaldsky, Jan Morgos
doaj   +1 more source

Correlation between crystal structure and magnetism in PLD grown epitaxial films of ε-Fe2O3 on GaN

Science and Technology of Advanced Materials, 2021
In the present paper we discuss correlations between crystal structure and magnetic properties of epitaxial ε-Fe2O3 films grown on GaN. The large magnetocrystalline anisotropy and room temperature multiferroic properties of this exotic iron oxide ...
Sergey M. Suturin, Alexander M. Korovin, Alla A. Sitnikova, Demid A. Kirilenko, Mikhail P. Volkov, Polina A. Dvortsova, Victor A. Ukleev, Masao Tabuchi, Nikolai S. Sokolov   +8 more
doaj   +1 more source

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Конденсированные среды и межфазные границы, 2023
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin   +13 more
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
openaire   +5 more sources

Sound Generation using GAN Models [PDF]

, 2023
openIn recent years, there has been a noticeable increase in the use of artificial intelligence for the generation of audio files. This master thesis presents a comprehensive approach to sound generation, incorporating the utilization of multiple GAN ...
BASTIANELLO, EDOARDO
core  

Fairness GAN

CoRR, 2018
In this paper, we introduce the Fairness GAN, an approach for generating a dataset that is plausibly similar to a given multimedia dataset, but is more fair with respect to protected attributes in allocative decision making. We propose a novel auxiliary classifier GAN that strives for demographic parity or equality of opportunity and show empirical ...
Prasanna Sattigeri, Samuel C. Hoffman, Vijil Chenthamarakshan, Kush R. Varshney   +3 more
openaire   +2 more sources

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Science and Technology of Advanced Materials, 2016
Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties.
Felix Schubert, Steffen Wirth, Friederike Zimmermann, Johannes Heitmann, Thomas Mikolajick, Stefan Schmult   +5 more
doaj   +1 more source

FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]

Journal of Engineering Science (Chişinău), 2019
The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
doaj   +1 more source