Results 31 to 40 of about 339,375 (294)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Optics Express, 2014
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work.
Kyaw, Z., Zhang, Z.-H., Liu W., Tan, S.T., Ju, Z.G., Zhang X.L., Ji, Y., Hasanov, N., Zhu, B., Lu, S., Zhang, Y., Sun X.W., Demir, H. V.   +12 more
openaire   +5 more sources

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +1 more source

Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

International audienceIn recent years, vertical GaN-on-GaN devices have emerged as potential substitutes for conventional lateral power devices like GaN-on-Si, GaN-on-Sapphire and SiC devices.
Rammouz, H, Bluet, J, M, Frayssinet, E, Bartoli, F, Brémond, G, Buckley, J, Cordier, Y, Planson, Dominique, Dagher, M, Sonneville, Camille, Maurya, V, Charles, M, Rochat, N   +12 more
core   +5 more sources

Detection and localization enhancement for satellite images with small forgeries using modified GAN-based CNN structure

IJAIN (International Journal of Advances in Intelligent Informatics), 2020
The image forgery process can be simply defined as inserting some objects of different sizes to vanish some structures or scenes. Satellite images can be forged in many ways, such as copy-paste, copy-move, and splicing processes.
Mohamed Mahmoud Fouad, Eslam Magdy Mostafa, Mohamed Abdelmoneim Elshafey   +2 more
doaj   +1 more source

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering [PDF]

Advanced science
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Yu L, Zhang H, Qin H, Zhang Y, Xu J, Zhao Y, Ding D, Xu J, Shin S, Zhang Z, Qin G.   +10 more
europepmc   +2 more sources

Perturbative GAN: GAN with Perturbation Layers

CoRR, 2019
Perturbative GAN, which replaces convolution layers of existing convolutional GANs (DCGAN, WGAN-GP, BIGGAN, etc.) with perturbation layers that adds a fixed noise mask, is proposed. Compared with the convolu-tional GANs, the number of parameters to be trained is smaller, the convergence of training is faster, the incep-tion score of generated images is
Yuma Kishi, Tsutomu Ikegami, Shin-ichi O'Uchi, Ryousei Takano, Wakana Nogami, Tomohiro Kudoh   +5 more
openaire   +3 more sources

Application of Transformer in anomaly indicators forecasting of hydropower units

Zhejiang dianli, 2023
The workloads of routine repair， maintenance， and abnormality detection of hydropower units are heavy. Therefore， traditional manual monitoring may leave out or misjudge abnormalities.
LIN Yemin, WANG Ning, QIU Rongjie, TANG Yuchao, ZHOU Guanqun, LI Zezhou, WANG Zhongya   +6 more
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
openaire   +5 more sources

H-GAN: the power of GANs in your Hands [PDF]

2021 International Joint Conference on Neural Networks (IJCNN), 2021
Paper accepted at The International Joint Conference on Neural Networks (IJCNN ...
Sergiu Oprea, Giorgos Karvounas, Pablo Martinez-Gonzalez, Nikolaos Kyriazis, Sergio Orts-Escolano, Iason Oikonomidis, Alberto Garcia-Garcia, Aggeliki Tsoli, José García Rodríguez 0001, Antonis A. Argyros   +9 more
openaire   +4 more sources