Results 21 to 30 of about 1,056,535 (282)

Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates [PDF]

, 2005
When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN ...
Dawson, M.D., Edwards, P.R., Gu, E., Liu, C., Martin, R.W., Watson, I.M.   +5 more
core   +1 more source

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Nanophotonics, 2023
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max, Eng John J. H., Mu Zhao, Chenot Sebastien, Brändli Virginie, de Mierry Philippe, Gao Weibo, Zúñiga-Pérez Jesús   +7 more
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
openaire   +5 more sources

First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]

, 2006
First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P., Kattner, U., van de Walle, A.   +2 more
core   +1 more source

Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

Applied Sciences, 2019
A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during ...
Ja-Yeon Kim, Yoo-Hyun Cho, Hyun-Sun Park, Jae-Hyun Ryou, Min-Ki Kwon   +4 more
doaj   +1 more source

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies [PDF]

, 2012
This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes ...
Albert, Steven, Barbagini, Francesca, Bengoechea Encabo, Ana, Calleja Pardo, Enrique, Jahn, U., Lefebvre, P., Sánchez García, Miguel Angel, Trampert, Achim   +7 more
core   +4 more sources

Detection and localization enhancement for satellite images with small forgeries using modified GAN-based CNN structure

IJAIN (International Journal of Advances in Intelligent Informatics), 2020
The image forgery process can be simply defined as inserting some objects of different sizes to vanish some structures or scenes. Satellite images can be forged in many ways, such as copy-paste, copy-move, and splicing processes.
Mohamed Mahmoud Fouad, Eslam Magdy Mostafa, Mohamed Abdelmoneim Elshafey   +2 more
doaj   +1 more source

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +1 more source

Application of Transformer in anomaly indicators forecasting of hydropower units

Zhejiang dianli, 2023
The workloads of routine repair， maintenance， and abnormality detection of hydropower units are heavy. Therefore， traditional manual monitoring may leave out or misjudge abnormalities.
LIN Yemin, WANG Ning, QIU Rongjie, TANG Yuchao, ZHOU Guanqun, LI Zezhou, WANG Zhongya   +6 more
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Optics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan   +9 more
openaire   +2 more sources