Results 11 to 20 of about 276,670 (296)
, 2006 C. crescentus CenK, glucose depletion .<strong>Tilt Series Date:</strong> 2006-08-04</p> <strong>Data Taken By:</strong> Lu Gan</p> <strong>Species / Specimen:</strong> Caulobacter crescentus</p> < ...
Gan, Lu
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Zonghan-Barry-Gan/public-axriv: 220812-Update-to-Pro-Abdulhamit-GAN-BHI
, 2022 This release is an update and discussion to Prof Abdulhamit. It use GAN to generate breast histopathology images, which will be later used as image enhancement to train models This notebook is based on Chris Deotte's notebook on 2019 using GAN for dog ...
Zonghan-Barry-Gan
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Deep Fake Image Detection Based on Pairwise Learning
Applied Sciences, 2020 Generative adversarial networks (GANs) can be used to generate a photo-realistic image from a low-dimension random noise. Such a synthesized (fake) image with inappropriate content can be used on social media networks, which can cause severe problems ...
Chih-Chung Hsu +2 more
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Adoption of Artificial Intelligence in Small and Medium-Sized Enterprises in Spain: The Role of Competences and Skills [PDF]
Amfiteatru EconomicThis article explores the determinants of the adoption of artificial intelligence (AI) in small and medium-sized enterprises (SMEs) with special attention to the impact of competencies and skills.
Mammadov Huseyn +3 more
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IEEE Transactions on Neural Networks and Learning Systems, 2023 37 pages, 27 ...
Yannis Pantazis +4 more
openaire +3 more sources
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Thermal conductivity of wurtzite gallium nitride
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2022 This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity.
V. S. Volcheck +2 more
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Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan +6 more
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Nanophotonics, 2023 The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max +7 more
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
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