Results 11 to 20 of about 122,529 (265)

Deep Fake Image Detection Based on Pairwise Learning

Applied Sciences, 2020
Generative adversarial networks (GANs) can be used to generate a photo-realistic image from a low-dimension random noise. Such a synthesized (fake) image with inappropriate content can be used on social media networks, which can cause severe problems ...
Chih-Chung Hsu, Yi-Xiu Zhuang, Chia-Yen Lee   +2 more
doaj   +1 more source

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Nanophotonics, 2023
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max, Eng John J. H., Mu Zhao, Chenot Sebastien, Brändli Virginie, de Mierry Philippe, Gao Weibo, Zúñiga-Pérez Jesús   +7 more
doaj   +1 more source

Cumulant GAN

IEEE Transactions on Neural Networks and Learning Systems, 2023
37 pages, 27 ...
Yannis Pantazis, Dipjyoti Paul, Michail Fasoulakis, Yannis Stylianou, Markos A. Katsoulakis   +4 more
openaire   +3 more sources

Adoption of Artificial Intelligence in Small and Medium-Sized Enterprises in Spain: The Role of Competences and Skills [PDF]

Amfiteatru Economic
This article explores the determinants of the adoption of artificial intelligence (AI) in small and medium-sized enterprises (SMEs) with special attention to the impact of competencies and skills.
Mammadov Huseyn, África Ruiz-Gándara, Luis González-Abril , Isidoro Romero   +3 more
doaj   +1 more source

High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA III

Journal of Synchrotron Radiation, 2022
A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-
S. Levcenko, R. Biller, T. Pfeiffelmann, K. Ritter, H. H. Falk, T. Wang, S. Siebentritt, E. Welter, C. S. Schnohr   +8 more
doaj   +1 more source

Morphology Control of One-Dimensional gallium nitride Nanostructures by Modulating the Crystallinity of Sacrificial gallium oxide Templates [PDF]

Archives of Metallurgy and Materials, 2021
In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity.
Yun Taek Ko, Mijeong Park, Jingyeong Park, Jaeyun Moon, Yong-Ho Choa, Young-In Lee   +5 more
doaj   +1 more source

Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

Applied Sciences, 2019
A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during ...
Ja-Yeon Kim, Yoo-Hyun Cho, Hyun-Sun Park, Jae-Hyun Ryou, Min-Ki Kwon   +4 more
doaj   +1 more source

GAN You Do the GAN GAN?

CoRR, 2019
Comment: 3 ...
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On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Optics Express, 2014
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work.
Kyaw, Z., Zhang, Z.-H., Liu W., Tan, S.T., Ju, Z.G., Zhang X.L., Ji, Y., Hasanov, N., Zhu, B., Lu, S., Zhang, Y., Sun X.W., Demir, H. V.   +12 more
openaire   +5 more sources

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +1 more source