Results 41 to 50 of about 122,529 (265)
Heat and Fluid Flow in Solvothermal Autoclave for Single-Crystal Growth Process
Journal of Thermal Science and Technology, 2012 We report and discuss an experiment and numerical simulation of heat transfer by natural convection inside an autoclave for the solvothermal growth of bulk crystalline GaN.
Yoshio MASUDA +3 more
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Communication et études de l’IA : mémoire du futur
Interfaces Numériques, 2020 Pour aborder la question de la mémoire du futur, ce texte se centre sur un récit de vie que nous avons recueilli auprès de Grégory Chatonsky, artiste dont la production est fortement imprégnée par les outils d’intelligence artificielle. Parmi ces outils,
Franck Renucci +2 more
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Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2023 A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the ...
V. S. Volcheck, V. R. Stempitsky
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BiVi-GAN: Bivariate Vibration GAN
SensorsIn the domain of prognosis and health management (PHM) for rotating machinery, the criticality of ensuring equipment reliability cannot be overstated. With developments in artificial intelligence (AI) and deep learning, there have been numerous attempts to use those methodologies in PHM.
HoeJun Jeong +3 more
openaire +3 more sources
CoRR, 2018 A longstanding problem in machine learning is to find unsupervised methods that can learn the statistical structure of high dimensional signals. In recent years, GANs have gained much attention as a possible solution to the problem, and in particular have shown the ability to generate remarkably realistic high resolution sampled images.
Eitan Richardson, Yair Weiss
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Advanced Engineering Materials, EarlyView.A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič +7 more
wiley +1 more source
ETRI JournalThe effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang +11 more
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Integrated design of GaN-on-Si power devices and drivers
Dianzi Jishu YingyongAn all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
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Micromachines, 2020 In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
openaire +2 more sources