Results 41 to 50 of about 8,124,306 (331)

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances, 2021
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Flexible ITO-Free Organic Solar Cells Based on $\hbox{MoO}_{3}/\hbox{Ag}$ Anodes

IEEE Photonics Journal, 2015
Flexible organic solar cells (OSCs) using our proposed MoO3 (2 nm)/Ag (9 nm) anode are fabricated on poly(ethylene terephthalate) (PET) substrates with poly(3hexylthiophene) (P3HT) and [6,6]-phenyl-C61 -butyric acid methyl ester (PCBM) films as the ...
Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Shi Tang, Jincheng Zhang, Ying Wang, Genquan Han, Shengrui Xu, Yue Hao   +8 more
doaj   +1 more source

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

Crystals, 2021
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better ...
Xiaomeng Fan, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source

Bridging the Gap

JACC: Case Reports, 2023
[Figure: see text]
Brian Whisenant, MD, Alec Vahanian, MD
openaire   +3 more sources

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

AIP Advances, 2017
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu, Jibran Hussain Mirani, Jiao Fu, Zongchen Liu, Hongxing Wang   +4 more
doaj   +1 more source

The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization

Engineering Reports, 2022
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan, Hongliang Lu, Yuming Zhang, Yimen Zhang   +3 more
doaj   +1 more source

Mind the gap [PDF]

, 2006
In this summary of the application of Dyson-Schwinger equations to the theory and phenomenology of hadrons, some deductions following from a nonperturbative, symmetry-preserving truncation are highlighted, notable amongst which are results for ...
A. Krassnigg, Achasov, Alkofer, Bando, Beise, Bender, Bender, Bhagwat, Bloch, Bodwin, Burden, Burden, Burkert, C. D. Roberts, Cahill, Cahill, Dominguez, Flambaum, Gao, Hawes, Hecht, Holl, Höll, Höll, Höll, Ivanov, Ivanov, Ivanov, Krassnigg, Lakhina, Llanes-Estrada, Lucha, M. S. Bhagwat, Madey), Maris, Maris, Maris, Maris, Maris, Maris, Maris, Maris, McNeile, Melo, Munczek, Oettel, Oettel, P. Maris, Roberts, Volkov, Yao), Yaouanc, Yennie   +52 more
core   +1 more source

The Gender Wage Gap: Extent, Trends, and Explanations

Social Science Research Network, 2016
Using PSID microdata over the 1980-2010, we provide new empirical evidence on the extent of and trends in the gender wage gap, which declined considerably over this period.
Francine D. Blau, Lawrence M. Kahn
semanticscholar   +1 more source

Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators

AIP Advances, 2017
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu, Jiao Fu, Zongchen Liu, Jibran Hussain Mirani, Hongxing Wang   +4 more
doaj   +1 more source

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

IET Power Electronics, 2021
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations.
Sicheng Liu, Xiaoyan Tang, Qingwen Song, Yuehu Wang, Ruijie Bai, Yimen Zhang, Yuming Zhang   +6 more
doaj   +1 more source