Results 111 to 120 of about 48,246 (256)

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

open access: yesAdvanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh   +8 more
wiley   +1 more source

Toward Nano‐Nutritional Medicine: A Remotely Activated Trans‐Vaccenic Acid‐Based Lipid Nanoparticles for Enhancing Immune Checkpoint Blockade Therapy

open access: yesAdvanced Science, EarlyView.
Eutectic mixtures from trans‐vaccenic acid (TVA) and stearic acid, which served as phase‐change material to encapsulate IR780, forming NIR‐responsive nanoparticles. IR780@TVA LNPs induce photothermal therapy and initiate adaptive anti‐tumor immunity.
Kang Liu   +12 more
wiley   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

open access: yesAdvanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang   +4 more
wiley   +1 more source

Dynamic Reconstruction‐Engineered Heterointerfaces for Acidic Hydrogen Evolution at Ampere‐Level Current Density

open access: yesAdvanced Science, EarlyView.
A dynamic reconstruction strategy was utilized to construct PtCu/Cu3P heterostructures on the surface of self‐supporting Cu3P nanowires. The loose porosity in the restructured layer, together with a dynamic “dissolution‐redeposition” equilibrium during electrocatalysis, enables the electrode to maintain a low, stable overpotential for 240 h at ampere ...
Kaixi Wang   +3 more
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade   +10 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

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