Results 101 to 110 of about 1,486 (251)

Atomic Defects in Layered Transition Metal Dichalcogenides for Sustainable Energy Storage and the Intelligent Trends in Data Analytics

open access: yesAdvanced Science, EarlyView.
This review comprehensively summarizes the atomic defects in TMDs for their applications in sustainable energy storage devices, along with the latest progress in ML methodologies for high‐throughput TEM data analysis, offering insights on how ML‐empowered microscopy facilitates bridging structure–property correlation and inspires knowledge for precise ...
Zheng Luo   +6 more
wiley   +1 more source

Surface Flashover in 50 Years: III. Extreme Environments and Industrial Challenges

open access: yesHigh Voltage
Modern high‐voltage electrical equipment operates in complex environments where surface conditions are subjected to multifaceted influences from electric fields, thermal gradients, contaminants, irradiation and other extreme environmental factors.
Zhen Li   +6 more
doaj   +1 more source

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

open access: yesAdvanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung   +16 more
wiley   +1 more source

Temporal Interference Stimulation Enhances Neural Regeneration

open access: yesAdvanced Science, EarlyView.
Temporal interference (TI) stimulation is proposed as a non‐invasive approach to enhance neural regeneration in the deep brain. Theta‐band TI modulation selectively promotes neural progenitor cell differentiation in vitro and augments hippocampal neurogenesis in amouse model of Alzheimer's disease‐like amyloidosis.
Sofia Peressotti   +15 more
wiley   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

open access: yesAdvanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa   +10 more
wiley   +1 more source

Interfacial Polysulfide Confinement via Spatially Controlled Sulfonated Metal–Organic Polyhedra Coatings in Lithium–Sulfur Batteries

open access: yesAdvanced Science, EarlyView.
Spatially controlled sulfonated metal–organic polyhedra (SMOP) coating on sulfur‐loaded hollow carbon spheres form ultrathin, conformal interfacial barriers that selectively confine soluble polysulfides, stabilize sulfur redox, and suppress shuttle reactions.
Soyeon Ko   +8 more
wiley   +1 more source

Silicon‐Embedded Multifunctional Heterogeneous Integration for Miniaturized Photoplethysmography Detection Devices

open access: yesAdvanced Science, EarlyView.
ABSTRACT The multifunctional integration of chips with high flexibility and scalable manufacturing is crucial for enhancing chip performance, reducing chip size, and simplifying chip design. However, balancing volume, cost, flexibility, and functionality using traditional heterogeneous integration methods is challenging.
Lang Chen   +7 more
wiley   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee   +9 more
wiley   +1 more source

Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder

open access: yesAdvanced Science, EarlyView.
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim   +13 more
wiley   +1 more source

V2CTx MXene as a Sacrificial Promoter for NiFe Catalyst for Anion Exchange Membrane Electrolyzers

open access: yesAdvanced Science, EarlyView.
These findings demonstrate that V2CTx functions beyond passive conductive support as an active electronic participant whose structural legacy sustains durable performance even after vanadium leaching in Anion Exchange Membrane (AEM) Electrolysers. ABSTRACT Nickel‐iron layered double hydroxides (NiFe‐LDH) show excellent activity, their poor conductivity
Bastian Schmiedecke   +12 more
wiley   +1 more source

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