Results 121 to 130 of about 43,947 (298)

IEC/IEEE关于GIL标准的差异及对我国应用的影响

open access: yesGaoya dianqi, 2019
气体绝缘输电线路(gas-insulated transmission lines,GIL)是近年来应用发展较快的电气设备。虽然国际电工委员会(IEC)在2011年才提出正式的标准,美国电气电子工程师学会(IEEE)则至2016年颁发标准,但并未影响GIL推广应用。文中通过对两个标准内容比较与分析,讨论了中国在应用中可借鉴和不同规定的情况,以期能为中国GIL的应用发展提供一些建议。
刘兆林
doaj  

Wafer‐Scale 2D High‐Entropy Transition Metal Dichalcogenide Thin‐Film Catalysts for Efficient and Durable Photoelectrochemical Hydrogen Production

open access: yesAdvanced Materials, EarlyView.
A wafer‐scale 2D high‐entropy (MoWTaNbRu)S2 thin‐film catalyst with a distorted 1T phase integrated onto p‐Si photocathode is designed for highly efficient and durable photoelectrochemical hydrogen evolution reaction. The high‐entropy effect in layered transition metal dichalcogenides optimizes hydrogen adsorption energetics, accelerates photogenerated
Sang Eon Jun   +14 more
wiley   +1 more source

Physical sciences: Thermodynamics, cryogenics, and vacuum technology: A compilation [PDF]

open access: yes
Technological developments which have potential application outside the aerospace community are reported. A variety of thermodynamic devices including heat pipes and cooling systems are described along with methods of handling cryogenic fluids.

core   +1 more source

A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection

open access: yesAdvanced Materials, EarlyView.
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing   +10 more
wiley   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Currents between tethered electrodes in a magnetized laboratory plasma [PDF]

open access: yes
Laboratory experiments on important plasma physics issues of electrodynamic tethers were performed. These included current propagation, formation of wave wings, limits of current collection, nonlinear effects and instabilities, charging phenomena, and ...
Stenzel, R. L., Urrutia, J. M.
core   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

open access: yesAdvanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk   +8 more
wiley   +1 more source

REVOLUTIONIZING POWER TRANSMISSION: THE GAS-INSULATED TRANSMISSION LINE

open access: yesInternational Research Journal of Modernization in Engineering Technology and Science, 2023
openaire   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

open access: yesAdvanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov   +8 more
wiley   +1 more source

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