Results 181 to 190 of about 37,307 (275)

A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions [PDF]

, 2003
Z. Y. Liu, T. F. Kuech, Dovas A. Saulys
openalex   +1 more source

<i>Sargassum</i> Enrichment in Mesoscale Eddies of the Great Atlantic <i>Sargassum</i> Belt. [PDF]

Geophys Res Lett
Zhang Y, Barnes BB, McGillicuddy DJ, Hu C.   +3 more
europepmc   +1 more source

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V

International Electron Devices Meeting, 2016
E. Memišević, J. Svensson, M. Hellenbrand, E. Lind, L. Wernersson   +4 more
semanticscholar   +1 more source

The Formation of an Interface and Its Energy Levels Inside a Band Gap in InAs/GaSb/AlSb/GaSb M-Structures. [PDF]

Materials (Basel)
Śliż P, Jarosz D, Pasternak M, Marchewka M.   +3 more
europepmc   +1 more source

Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer. [PDF]

Sci Rep
Liu C, Ye H, Zhao W, Bai R, Shi Y.
europepmc   +1 more source

Deciphering the stability of two-dimensional III-V semiconductors: Building blocks and their versatile assembly. [PDF]

Sci Adv
Yan Y, Chen K, Sun M, Ma Y, Wang P, Deng J, Zhang X, Liu JZ.   +7 more
europepmc   +1 more source

Study of the Local Environment of Mn Ions Implanted in GaSb

, 2010
A. Wolska, K. Ławniczak‐Jabłońska, Marcin T. Klepka, A. Barcz, Anders Hallén, D. Arvanitis   +5 more
openalex   +1 more source

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

, 2017
Qiang Li, Billy Lai, K. Lau
semanticscholar   +1 more source

Output power-density limit of a thermoradiative diode with an intermediate band. [PDF]

Sci Rep
Harada Y, Nishii F, Kita T.
europepmc   +1 more source

The development of technology for growing InAs/GaSb superlattices by MOCVD

, 2018
Ю.В. Федоров, R. V. Levin, V. N. Nevedomsky   +2 more
openalex   +1 more source