Results 181 to 190 of about 37,714 (225)

Single-junction GaSb and tandem GaSb/InGaAsSb and AlGaAsSb/GaSb thermophotovoltaic cells

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2002
The advanced technology of the single- and dual-junction TPV cells, based on GaSb was developed. Photocurrent density as high as 54 mA/cm/sup 2/ under AM0 spectrum, efficiencies of 12.8% (AM1.5D, 120 suns) and 19.1% under cut-off AM0-spectrum (/spl lambda/=900-1800 nm) were obtained.
V.M. Andreev, V.P. Khvostikov, V.D. Rumyantsev, S.V. Sorokina, M.Z. Shvarts   +4 more
openaire   +1 more source

Die binären eutektika GaSbGaV3Sb5 und GaSbV2Ga5

Solid State Communications, 1966
Zusammenfassung Praparation und Ergebnisse von metallographischen Untersuchungen der binaren Eutektika GaSb-GaV 3 Sb 5 und GaSb-V 2 Ga 5 werden beschrieben. Die eutektischen Konzentrationen sind 4,9 Gew.% GaV 3 Sb 5 und 4,4 Gew.% V 2 Ga 5 . Beide Eutektika konnen eine faserartige, polykristalline GaSb-Matrix bilden, deren Korner eine 〈110 ...
A. Müller, M. Wilhelm
openaire   +1 more source

Ultra-high hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors.

Nano letters (Print), 2019
Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronics and photoelectronics devices was stagnant in the past decade.
Jiamin Sun, Meng Peng, Yushuang Zhang, Lei Zhang, Rui Peng, C. Miao, Dong Liu, Mingming Han, Runfa Feng, Yandong Ma, Ying Dai, Longbing He, Chongxin Shan, A. Pan, Weida Hu, Zai‐xing Yang   +15 more
semanticscholar   +1 more source

High-Performance Long-Wavelength InAs/GaSb Superlattice Detectors Grown by MOCVD

IEEE Photonics Technology Letters, 2019
We demonstrate the high-performance long-wavelength InAs/GaSb superlattice (SL) infrared photodetectors based on an Al-free single heterojunction grown by metalorganic chemical vapor deposition.
Y. Teng, Yu Zhao, Qihua Wu, Xin Li, Xiujun Hao, M. Xiong, Yong Huang   +6 more
semanticscholar   +1 more source

GaSb–PbSe–GaSb double heterostructure midinfrared lasers

Applied Physics Letters, 1998
A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved.
openaire   +1 more source

Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

Current applied physics, 2019
In the paper, the comparative analysis of type-II InAs/GaSb SLs deposited on three types of GaSb buffers: homoepitaxial, metamorphic and one grown using the interfacial misfit (IMF) array technique has been presented.
A. Jasik, I. Sankowska, J. Ratajczak, A. Wawro, D. Smoczynski, K. Czuba, M. Wzorek   +6 more
semanticscholar   +1 more source

Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth, 2018
The effect of growth parameters in metalorganic chemical vapor deposition (MOCVD) on the crystal quality and surface morphology of the InAs/GaSb superlattices (SLs) on InAs substrates was systematically investigated by X-ray diffraction, scanning ...
Xin Li, Yu Zhao, Qihua Wu, Y. Teng, Xiujun Hao, Yong Huang   +5 more
semanticscholar   +1 more source

ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization

Journal of Applied Physics, 1994
Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by ...
A. Guivarc’h, Y. Ballini, Y. Toudic, M. Minier, P. Auvray, B. Guenais, J. Caulet, B. Le Merdy, B. Lambert, A. Regreny   +9 more
openaire   +1 more source

Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures

Applied Physics Letters, 1990
Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results.
K. F. Longenbach, L. F. Luo, W. I. Wang
openaire   +1 more source

Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

Optik, 2018
Abstract In this paper a GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure destined for thermo-photovoltaic applications at room temperature was fabricated by Molecular Beam Epitaxy (MBE) technique, in a Varian gen II solid-source machine. At direct bias, the J(V) characteristics of this structure in the dark and under light conditions, have been studied by ...
Meharrar, F.Z., Belfar, A., Aouad, I., Giudicelli, E., Cuminal, Y., Aït-Kaci, H.   +5 more
openaire   +1 more source