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Morphological and Histological Variations of the Reproductive Organs During the Annual Cycle in a Neotropical Bat: Peters' Ghost-Faced Bat Mormoops megalophylla (Chiroptera: Mormoopidae). [PDF]
Samano-Barbosa GA +8 more
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Perovskite Quantum Dot-Enhanced Silicon Photodetectors for High-Performance Infrared Sensing. [PDF]
Baek D +8 more
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Advanced Functional Materials, 2023
The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this
Zixu Sa +9 more
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The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this
Zixu Sa +9 more
semanticscholar +1 more source
Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays.
ACS Nano, 2022The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years.
Kai Zhang +11 more
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GaSb Film is a Saturable Absorber for Dissipative Soliton Generation in a Fiber Laser.
ACS Applied Materials and Interfaces, 2022Nanotechnology is at the forefront of scientific research and offers great prospects for the development of technology. As a type of III-V semiconductor, GaSb materials exhibit numerous outstanding optical and electrical characteristics that are very ...
Lihui Pang +7 more
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Small, 2022
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic
Dong Liu +11 more
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The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic
Dong Liu +11 more
semanticscholar +1 more source
IEEE Transactions on Nanobioscience, 2022
The present paper estimates the performance of vertically developed double gate GaSb/Si tunnel field-effect transistor (V-DGTFET) biosensor with source pocket.
A. Theja, Meena Panchore
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The present paper estimates the performance of vertically developed double gate GaSb/Si tunnel field-effect transistor (V-DGTFET) biosensor with source pocket.
A. Theja, Meena Panchore
semanticscholar +1 more source

