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Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire
IEEE Electron Device Letters, 2021The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength of 1550 nm is the least loss band for transmission communication, and the study of photodetectors working at 1550 nm ...
Zhihui Ren +8 more
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IEEE Transactions on Electron Devices, 2020
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect transistor (V-TFET) with a source pocket to enhance the performance of the device.
M. Tripathy +6 more
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This article investigates the performance of a vertically grown GaSb/Si tunnel field effect transistor (V-TFET) with a source pocket to enhance the performance of the device.
M. Tripathy +6 more
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GaSb-InAs-GaSb heterostructures studied under hydrostatic pressure
Physical Review B, 1987We report transport measurements on GaSb-InAs-GaSb heterostructures under hydrostatic pressure (up to 1.2 GPa) and high magnetic field (up to 18 T) at low temperature. The pressure-induced decrease of the carrier concentrations is analyzed in terms of two distinct causes: an intrinsic charge transfer between the GaSb valence band and InAs conduction ...
, Beerens +5 more
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Single-junction GaSb and tandem GaSb/InGaAsSb and AlGaAsSb/GaSb thermophotovoltaic cells
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2002The advanced technology of the single- and dual-junction TPV cells, based on GaSb was developed. Photocurrent density as high as 54 mA/cm/sup 2/ under AM0 spectrum, efficiencies of 12.8% (AM1.5D, 120 suns) and 19.1% under cut-off AM0-spectrum (/spl lambda/=900-1800 nm) were obtained.
V.M. Andreev +4 more
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Die binären eutektika GaSbGaV3Sb5 und GaSbV2Ga5
Solid State Communications, 1966Zusammenfassung Praparation und Ergebnisse von metallographischen Untersuchungen der binaren Eutektika GaSb-GaV 3 Sb 5 und GaSb-V 2 Ga 5 werden beschrieben. Die eutektischen Konzentrationen sind 4,9 Gew.% GaV 3 Sb 5 und 4,4 Gew.% V 2 Ga 5 . Beide Eutektika konnen eine faserartige, polykristalline GaSb-Matrix bilden, deren Korner eine 〈110 ...
A. Müller, M. Wilhelm
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High-Performance Long-Wavelength InAs/GaSb Superlattice Detectors Grown by MOCVD
IEEE Photonics Technology Letters, 2019We demonstrate the high-performance long-wavelength InAs/GaSb superlattice (SL) infrared photodetectors based on an Al-free single heterojunction grown by metalorganic chemical vapor deposition.
Y. Teng +6 more
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GaSb–PbSe–GaSb double heterostructure midinfrared lasers
Applied Physics Letters, 1998A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved.
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Journal of Applied Physics, 2019
To determine the band alignment at the GaSb1-xBix/GaSb interface, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by photoreflectance (PR ...
R. Kudrawiec +8 more
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To determine the band alignment at the GaSb1-xBix/GaSb interface, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by photoreflectance (PR ...
R. Kudrawiec +8 more
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Journal of Applied Physics, 1994
Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by ...
A. Guivarc’h +9 more
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Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by ...
A. Guivarc’h +9 more
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Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Applied Physics Letters, 1990Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results.
K. F. Longenbach, L. F. Luo, W. I. Wang
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