Results 241 to 250 of about 37,307 (275)

Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

Optik, 2018
Abstract In this paper a GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure destined for thermo-photovoltaic applications at room temperature was fabricated by Molecular Beam Epitaxy (MBE) technique, in a Varian gen II solid-source machine. At direct bias, the J(V) characteristics of this structure in the dark and under light conditions, have been studied by ...
Meharrar, F.Z., Belfar, A., Aouad, I., Giudicelli, E., Cuminal, Y., Aït-Kaci, H.   +5 more
openaire   +1 more source

Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy

Journal of Applied Physics, 1993
Successful growth by molecular beam epitaxy of YbSb2 (010) single crystal films on GaSb(001) has been demonstrated. The YbSb2 films have a room temperature resistivity equal to 40 μΩ cm. YbSb2 has a basal plane rectangular (but almost square) and nearly lattice matched to GaSb. The memory of the GaSb(001) surface orientation is transferred to the YbSb2
A. Guivarc’h, Y. Ballini, P. Auvray, J. Caulet, M. Minier, G. Dupas, G. Ropars   +6 more
openaire   +1 more source

GASB Update

Municipal Finance Journal, 2000
  +6 more sources

Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb

Journal of Applied Physics, 1990
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm.
L. F. Luo, R. Beresford, K. F. Longenbach, W. I. Wang   +3 more
openaire   +1 more source

Demonstration of Sn-seeded GaSb homo- and GaAs–GaSb heterostructural nanowires

Nanotechnology, 2016
The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning.
Marcus Tornberg, Erik K Mårtensson, Reza R Zamani, Sebastian Lehmann, Kimberly A Dick, Sepideh Gorji Ghalamestani   +5 more
openaire   +2 more sources

GaSb for passivating type-II InAs/GaSb superlattice mesas

Infrared Physics & Technology, 2010
The lack of stable passivation for mesa sidewalls is hampering the development of infrared focal plane arrays (FPAs) based on type-II InAs/GaSb superlattices (SL). We propose the use of GaSb itself to fill the space between FPA pixels, thus eliminating sidewalls and sidewall currents.
F. Szmulowicz, G.J. Brown
openaire   +1 more source

???????????????????????????????????? ?????????????????? ???????????????? GaSb ?????? ???????????????????????? ?????????????????????? ???????????????????????????????????? ??????????

2014
???????????????????????? ???????????????????? ???????????????????????? ???? ?????????????????????? ?????????????? ???????????????????????????????????? ?????????????????? ???????????????? GaSb ???????????????????? ???????????????????? ?? ?????????? ???? ???????????? ???????????????????????????? ????????????.
openaire   +1 more source

Carrier Mobility in GaSb–V2Ga5and GaSb–GaV3Sb5 Eutectic Alloys

Inorganic Materials, 2003
Experimental evidence is presented that semiconductor–metal eutectics with a low content of the metallic phase (4 vol %) are similar in electronic structure to inhomogeneous semiconductors. The microstructure of undoped and Te-doped GaSb–V2Ga5 and GaSb–GaV3Sb5 eutectic alloys is examined, and the Hall mobility of carriers in these alloys is determined.
openaire   +1 more source

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

, 1983
D. Aspnes, A. A. Studna
semanticscholar   +1 more source

???????????????????????? ???????????????? ?????????????????????????????????? ???????????????????????????? ???????????????? InSb, ???????????????????????????? ?? ?????????????? GaSb

2013
Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt arc presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low ...
openaire   +1 more source