Results 141 to 150 of about 6,152 (186)

Tailoring in-Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy. [PDF]

Small Methods
Mukherjee S, Sitaram SR, Yu M, Wang X, Law S.   +4 more
europepmc   +1 more source

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source

Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method. [PDF]

RSC Adv
Li B, Dong Z, Xu W, Li G, Yang X, Feng S, Feng W, Lu W.   +7 more
europepmc   +1 more source

Wafer-Scale Replication of Plasmonic Nanostructures via Microbubbles for Nanophotonics. [PDF]

Adv Sci (Weinh)
Hwang J, Zhang Y, Kim B, Jeong J, Yi J, Kim DR, Kim YL, Urbas A, Ariyawansa G, Xu B, Ku Z, Lee CH.   +11 more
europepmc   +1 more source

Chiral edge state control of thermoelectric effects. [PDF]

Sci Adv
Huynh W, Liu B, Munyan S, Ahadi S, Stemmer S.   +4 more
europepmc   +1 more source

Inverse design of lateral hybrid metasurfaces structural colour: an AI approach. [PDF]

RSC Adv
Fang R, Ghasemi A, Zeze D, Keshavarz Hedayati M.   +3 more
europepmc   +1 more source

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Au spreading on GaSb substrates

Materials Science and Engineering: B, 1993
Abstract Gold spreading on monocrystal substrates of GaSb during thermal annealing at temperatures ranging from 300 °C to 400 °C is studied. The spreading areas form a geometrical pattern related to the crystallographic structure of the GaSb substrates as observed under optical and electron microscopy. The peripheries of the spreading areas are along
S.S. Tan, A.G. Milnes
openaire   +1 more source

Growth of GaSb on GaAs substrates

Journal of Crystal Growth, 1994
Abstract The initial growth of GaSb on GaAs substrates by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) has been investigated both in-situ and ex-situ. The in-situ technique used was quasi-elastic light scattering (QLS) and the ex-situ technique was atomic force microscopy (AFM) measurements.
R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, L. Smith, P.J. Walker   +5 more
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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

Science in China Series E: Technological Sciences, 2009
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer.
Jie Guo, HuiJuan Chen, WeiGuo Sun, RuiTing Hao, YingQiang Xu, ZhiChuan Niu   +5 more
openaire   +1 more source