Results 171 to 180 of about 2,109,434 (243)

Long wavelength interband cascade lasers on GaSb substrates

Infrared Remote Sensing and Instrumentation XXV, 2017
Interband Cascade Lasers (ICLs) are semiconductor laser sources emitting photons in the mid-infrared wavelength region. In the GaSb material system, ICLs cover the ~2.7 µm to ~5.6 µm wavelength range operating in continuous wave mode. In this spectral region, the low power consumption of ICLs is unrivaled compared to diode lasers and quantum cascade ...
Sven Höfling, Anne Schade
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GaSb film growth on GaAs substrate by MBE

SPIE Proceedings, 2005
The GaSb characteristics grown by molecular beam epitaxy (MBE) on GaAs substrates was reported. The abruptness of the interfaces, the degree of intermixing and the anion incorporation greatly affect the material quality. The RHEED patterns provide information on the surface structure and morphology of the sample and dictate surface reconstruction ...
Lin Li, Guo-jun Liu, Yong Wang, Mei Li
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Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

Current applied physics, 2019
In the paper, the comparative analysis of type-II InAs/GaSb SLs deposited on three types of GaSb buffers: homoepitaxial, metamorphic and one grown using the interfacial misfit (IMF) array technique has been presented.
A. Jasik, I. Sankowska, J. Ratajczak, A. Wawro, D. Smoczynski, K. Czuba, M. Wzorek   +6 more
semanticscholar   +1 more source

Heteroepitaxial growth of GaSb on Si(001) substrates

Journal of Crystal Growth, 2004
Abstract We investigated the heteroepitaxial growth of GaSb on Si(0 0 1) substrate. We found that high-quality GaSb films can be grown on Si substrate by introducing an AlSb initiation layer. We obtained a narrow X-ray diffraction rocking curve and over-1400-nm emission from GaSb/AlGaSb quantum wells by optimizing the growth temperature and thickness
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Naoki Ohtani   +3 more
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Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth

Infrared physics & technology, 2018
This work demonstrates a low dislocation density molecular beam epitaxial process (average etch pit density ∼1.4 × 105 cm−2) for the growth of CdTe buffer layers on GaSb (211)B alternative substrates for subsequent growth of HgCdTe infrared materials ...
W. Lei, Yongling Ren, Imtiaz Madni, L. Faraone   +3 more
semanticscholar   +1 more source

Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

Bulletin of the Russian Academy of Sciences: Physics, 2011
Fianite is a single crystal of cubic solid solutions based on zirconium dioxide (ZrO2) or hafnium dioxide (HfO2) with stabilizing oxides of yttrium, scandium, and lanthanides. It is characterized by a unique combination of physical and chemical properties, making it a promising material for wide use in electronics. In this work, we consider new uses of
Yu. N. Buzynin, M. N. Drozdov, A. N. Buzynin, V. V. Osiko, B. N. Zvonkov, Yu. N. Drozdov, O. I. Khrykin, A. E. Luk’yanov, F. A. Luk’yanov, V. G. Shengurov, S. A. Denisov   +10 more
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Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy

Journal of Crystal Growth, 2019
We grew a GaSb/Al0.3Ga0.7Sb multiple-quantum-well (MQW) structure on a two-inch Si(1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface ...
R. Machida, K. Akahane, I. Watanabe, S. Hara, S. Fujikawa, A. Kasamatsu, H. Fujishiro   +6 more
semanticscholar   +1 more source

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Applied Physics Letters, 2000
Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs ...
S. S. Yi, D. M. Hansen, C. K. Inoki, D. L. Harris, T. S. Kuan, T. F. Kuech   +5 more
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Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

Journal of Crystal Growth, 2018
Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs.
F. Predan, J. Ohlmann, S. Mrabet, F. Dimroth, D. Lackner   +4 more
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MOVPE growth of Ga(As)SbN on GaSb substrates

Journal of Crystal Growth, 2008
Abstract GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN.
J.Y.T. Huang, L.J. Mawst, S. Jha, T.F. Kuech, D. Wang, L. Shterengas, G. Belenky, J.R. Meyer, I. Vurgaftman   +8 more
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