Results 171 to 180 of about 6,152 (186)

Chemical preparation of GaSb(001) substrates prior to MBE

Semiconductor Science and Technology, 1989
The chemical preparation of GaSb(001) substrates was performed by Br2-HCl-HNO3-CH3COOH solution. The removed layer thickness was evaluated as a function of the constituent concentrations and the etching time. The surface quality was controlled by SEM, RHEED and AES.
F W O Da Silva, C Raisin, M Silga, M Nouaoura, L Lassabatere   +4 more
openaire   +1 more source

Selective liquid phase epitaxy of AlGaInSb on GaSb substrates

Journal of Crystal Growth, 1985
Abstract Using polycrystalline GaSb substrates and LPE techniques, the orientation dependence of the growth rate was studied for AlGaInSb quaternary III-V alloys. On differently oriented GaSb substrate grains contacting the same melt different growth rates have been observed.
E. Lendvay, L. Petrás, V.A. Gevorkyan
openaire   +1 more source

Standardizing large format 5" GaSb and InSb substrate production

SPIE Proceedings, 2017
In this paper we report on the maturation of large diameter GaSb and InSb substrate production and the key aspects of product quality and process control that have enabled a level of standardization to be achieved that is on par with mass produced compound semiconductor materials such as GaAs and InP.
Becky Martinez, J. Patrick Flint, G. Dallas, B. Smith, M. Tybjerg, Shanmugam Aravazhi, Mark J. Furlong   +6 more
openaire   +1 more source

Type-II InAs/GaSb superlattice grown on InP substrate

Journal of Crystal Growth, 2013
Abstract Type-II InAs/GaSb superlattices are promising for the absorption layers of mid-infrared sensors. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. InP substrate is attractive due to high transparency, relatively small lattice mismatch and near thermal expansion ...
K. Miura, Y. Iguchi, Y. Kawamura
openaire   +1 more source

Interband cascade lasers on GaSb substrates emitting beyond 5.6pm

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017
Since the first theoretical prediction by Yang [1] and the first experimental realization [2] interband cascade lasers (ICL) became more and more established for gas sensing applications. The ICL combines the cascading of several active stages known from the quantum cascade laser (QCL) and the interband transition of the diode lasers (DL) enabled by ...
Anne Schade, Sven Hofling
openaire   +1 more source

Residual carrier density in GaSb grown on Si substrates

Thin Solid Films, 2006
Abstract The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 ...
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Naoki Ohtani   +4 more
openaire   +1 more source

Analysis of Er incorporation on GaSb substrates by diffusion

Crystal Research and Technology, 2004
AbstractOn this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er ...
C. M. Ruiz, J. L. Plaza, V. Bermúdez, E. Diéguez   +3 more
openaire   +1 more source

Long wavelength GaSb photoconductive detectors grown on Si substrates

Applied Physics Letters, 1986
We report the first long wavelength photoconductive detectors fabricated from GaSb epitaxially grown on Si substrates. Responsivities of 0.18 A/W are obtained at a wavelength of 1.5 μm.
B. F. Levine, R. J. Malik, C. G. Bethea, J. Walker   +3 more
openaire   +1 more source

Self Assembled Growth of GaSb Nano Triangles on GaN/Sapphire Substrate

Journal of Nanoscience and Nanotechnology, 2013
Self-assembled GaSb nano structures were grown on GaN/sapphire. GaSb nano triangles as well as quantum dots were obtained under controlled growth conditions. Nano triangles were grown at 580 degrees C due to the growth rate anisotropy among the (1100) planes. The size of nano triangle was 87 nm in width, 5 nm in height, and the density was 5 x 10(8) cm(
Se-Hoon, Moon, Joonmo, Park, June Key, Lee, Sang-Wan, Ryu   +3 more
openaire   +2 more sources

GaSb-based Interband cascade lasers grown onto silicon substrates

Physics and Simulation of Optoelectronic Devices XXXI, 2023
Laurent Cerutti, Daniel A. Díaz Thomas, Maëva Fagot, Audrey Gilbert, Gad Ndemengoye-Kombila, Jean-Baptiste Rodriguez, Alexei N. Baranov, Eric Tournié   +7 more
openaire   +1 more source