Results 181 to 190 of about 2,109,434 (243)
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(In)GaSb/AlGaSb quantum wells grown on Si substrates
Thin Solid Films, 2007We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems.
Kouichi Akahane +4 more
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Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
IEEE transactions on nanotechnology, 2018We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs) on Si(111) substrate by metal organic chemical vapor deposition technique.
R. K. Kakkerla +6 more
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Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
Superlattices and Microstructures, 2018We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy.
U. Serincan, B. Arıkan, O. Şenel
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MBE growth of high quality HgCdSe on GaSb substrates
Infrared Physics & Technology, 2018Abstract This paper demonstrates MBE growth of high quality HgCdSe infrared materials on GaSb (211)B substrates. The as-grown Hg1−xCdxSe samples have a range of x-values (x = 0.37–0.18) and cut-off wavelengths (λc = 3.9–10.4 μm at 80 K), and show typical n-type semiconductor behaviour. At a measurement temperature of 80 K, the as-grown HgCdSe samples
W. Lei +4 more
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Chemical preparation of GaSb(001) substrates prior to MBE
Semiconductor Science and Technology, 1989The chemical preparation of GaSb(001) substrates was performed by Br2-HCl-HNO3-CH3COOH solution. The removed layer thickness was evaluated as a function of the constituent concentrations and the etching time. The surface quality was controlled by SEM, RHEED and AES.
F W O Da Silva +4 more
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Selective liquid phase epitaxy of AlGaInSb on GaSb substrates
Journal of Crystal Growth, 1985Abstract Using polycrystalline GaSb substrates and LPE techniques, the orientation dependence of the growth rate was studied for AlGaInSb quaternary III-V alloys. On differently oriented GaSb substrate grains contacting the same melt different growth rates have been observed.
E. Lendvay, L. Petrás, V.A. Gevorkyan
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Standardizing large format 5" GaSb and InSb substrate production
SPIE Proceedings, 2017In this paper we report on the maturation of large diameter GaSb and InSb substrate production and the key aspects of product quality and process control that have enabled a level of standardization to be achieved that is on par with mass produced compound semiconductor materials such as GaAs and InP.
Becky Martinez +6 more
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Interband cascade lasers on GaSb substrates emitting beyond 5.6pm
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017Since the first theoretical prediction by Yang [1] and the first experimental realization [2] interband cascade lasers (ICL) became more and more established for gas sensing applications. The ICL combines the cascading of several active stages known from the quantum cascade laser (QCL) and the interband transition of the diode lasers (DL) enabled by ...
Anne Schade, Sven Hofling
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Residual carrier density in GaSb grown on Si substrates
Thin Solid Films, 2006Abstract The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 ...
Kouichi Akahane +4 more
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Analysis of Er incorporation on GaSb substrates by diffusion
Crystal Research and Technology, 2004AbstractOn this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er ...
C. M. Ruiz +3 more
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