Results 311 to 320 of about 85,934 (320)
Some of the next articles are maybe not open access.

Fully Encapsulated Gate-All-Around InAs Nanowire FET

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
S. Sasaki   +8 more
openaire   +1 more source

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

IEEE Electron Device Letters, 2020
Xiaogen Yin, Hong Yang, Lu Xie
exaly  

Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs

Micro and Nanostructures
Pankaj Kumar   +2 more
openaire   +1 more source

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

Microelectronics Journal, 2014
Manoj Kumar   +2 more
exaly  

Configurable Logic Gates Using Polarity-Controlled Silicon Nanowire Gate-All-Around FETs

IEEE Electron Device Letters, 2014
Michele De Marchi   +2 more
exaly  

Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET

IEEE Transactions on Electron Devices, 2014
Rajat Vishnoi, M Jagadesh Kumar
exaly  

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

IEEE Electron Device Letters, 2014
Elvedin Memisevic   +2 more
exaly  

Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

IEEE Electron Device Letters, 2011
Pushpapraj Singh   +2 more
exaly  

Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration

Nature Materials
Chenguang Qiu   +2 more
exaly  

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

IEEE Electron Device Letters, 2006
exaly  
materials science
optoelectronics
transistor
electrical engineering
voltage
nanowire
engineering
physics
nanotechnology
previous   30  31  32  

Home - About - Disclaimer - Privacy