Results 291 to 300 of about 85,934 (320)

SiGe Gate-All-around Nanosheet Reliability

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang   +5 more
openaire   +1 more source

Silicon-on-insulator 'gate-all-around' MOS device

1990 IEEE SOS/SOI Technology Conference. Proceedings, 2002
The total-dose radiation hardness of MOS devices is roughly inversely proportional to the square of the thickness of the oxide layers in contact with the silicon. In SOI (silicon-on-insulator) devices, the silicon layer sits on an oxide layer of typically 400 nm. It is proposed that a thin, gate-quality oxide can be realized at the front as well as the
J.-P. Colinge, M.-H. Gao, A. Romano, H. Maes, C. Claeys   +4 more
openaire   +1 more source

Si nanowire MOSFET with gate-all-around electrode

2009 International Semiconductor Device Research Symposium, 2009
Beyond 2011, when the channel length of a MOSFET transistor is projected to be 16 nm, effective scaling of classical planar bulk MOSFETs is expected to come to an end. Below 16 nm channel length, achieving adequate electrostatic control of short channel effects poses the most serious challenge.
C. Ndoye, T. Liu, K. Meeham, M. Orlowski, D. Gu, N.H. Tran, H. Baumgart   +6 more
openaire   +1 more source

High threshold voltage matching performance on gate-all-around MOSFET

Solid-State Electronics, 2006
Abstract For the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped channel transistors, thanks to the absence of pocket nor halo implants.
Cathignol, A., Cros, A., Harrison, S., Cerrutti, R., Coronel, P., Pouydebasque, A., Rochereau, K., Skotnicki, T., Ghibaudo, G.   +8 more
openaire   +1 more source

Gate-All-Around Technology is Coming.

Proceedings of the 2023 International Symposium on Physical Design, 2023
openaire   +1 more source

Gate-all-around transistors stack up

Nature Electronics, 2020
openaire   +1 more source

Localized thermal effects in Gate-all-around devices

2023 IEEE International Reliability Physics Symposium (IRPS), 2023
Colin Landon, Lei Jiang, Daniel Pantuso, Inanc Meric, Kam Komeyli, Jeffrey Hicks, Daniel Schroeder   +6 more
openaire   +1 more source

Gate-All-Around Technology for Harsh Environment Applications

2002
Gate-Ail-Around (GAA) transistors are thin, fully depleted SOI MOSFETs with a double gate structure. When used at high temperature GAA devices present low leakage current, minimal threshold voltage shift and, in general, better characteristics than bulk or even SOI MOSFETs.
openaire   +1 more source

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

Nano Letters, 2021
Chen Li, Huilong Zhu, Yongkui Zhang
exaly  

Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

ACS Applied Materials & Interfaces, 2021
Yiheng Yin, Zhaofu Zhang, Hongxia Zhong
exaly