Results 271 to 280 of about 12,503,659 (299)
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Scaling opportunities for Gate-All-Around: A patterning perspective
2023 International Electron Devices Meeting (IEDM), 2023I. Seshadri +13 more
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p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
IEEE Electron Device Letters, 2021Li Zhang, Zheyang Zheng, Song Yang
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Top‐Gate Organic Field‐Effect Transistors with High Environmental and Operational Stability
Advanced Materials, 2011Do Kyung Hwang +2 more
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Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
Materials Science and Engineering Reports, 2006M Houssa +2 more
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Some Properties of SOI Gate-All-Around Devices
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, 1994P. Francis, X. Baie, J. P. Colinge
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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters, 2013Injun Hwang, Jongseob Kim, Jaejoon Oh
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