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Analysis of back gate and gate all around CNTFET structure
Proceedings of the International Conference & Workshop on Emerging Trends in Technology - ICWET '11, 2011Current CMOS technology has put forth many challenges like scaling issues, short channel effects, etc. The various remedies proposed to solve these include the use of strained silicon, silicon on insulator structure, double, tri-gate and Gate All around structures for CMOS, use of Graphene and Carbon Nanotube (CNT) devices, quantum cellular automata ...
M. R. Tambekar, S. R. Nade, A. Gajarushi
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Modeling and analysis of gate-all-around silicon nanowire FET
Microelectronics Reliability, 2014Abstract In this paper, we report the TCAD study on gate-all-around (GAA) silicon nanowire (SiNW) FET. The device carrier transport physics, self-heating effect and process induced stress effect are discussed. With a comparison study between GAA SiNW FET and FinFET, the advantages of GAA SiNW FET on gate controllability and short channel effect ...
Xiangchen Chen, Cher Ming Tan
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Characterization and reliability of III-V gate-all-around MOSFETs
2015 IEEE International Reliability Physics Symposium, 2015InGaAs is a promising channel material for high performance CMOS logic circuits due to its large electron injection velocity. InGaAs Gate-All-Around (GAA) MOSFETs have been demonstrated; these transistors offer large drive current and excellent immunity to short channel effects (SCE).
Mengwei Si +6 more
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RF and noise model of gate-all-around MOSFETs
Semiconductor Science and Technology, 2008Silicon-on-insulator (SOI) devices are excellent candidates to become an alternative to conventional bulk CMOS. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as surrounding gate (SGT) or gate-all-around (GAA).
A Lázaro, B Iñíguez
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Si nanowire MOSFET with gate-all-around electrode
2009 International Semiconductor Device Research Symposium, 2009Beyond 2011, when the channel length of a MOSFET transistor is projected to be 16 nm, effective scaling of classical planar bulk MOSFETs is expected to come to an end. Below 16 nm channel length, achieving adequate electrostatic control of short channel effects poses the most serious challenge.
C. Ndoye +6 more
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Noise in SOI MOSFETs and gate-all-around transistors
AIP Conference Proceedings, 2005In this paper, we discuss the RF noise properties of SOI MOSFETs, and we present a suitable model for nanoscale fully‐depleted SOI MOSFETs, which is derived from a compact quasi‐static SOI MOSFET model by properly extending it to the high frequency regime, using the active line approach and taking into account all the extrinsic parameters. We have used
Iniguez, B. +5 more
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From Gate-all-Around to Nanowire MOSFETs
2007 International Semiconductor Conference, 2007The classical MOSFET is reaching its scaling limits and "end-of-roadmap" alternative devices are being investigated. Amongst the different types of SOI devices proposed, one clearly stands out: the multigate field-effect transistor (multigate FET). This device has a general "wire-like" shape.
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Device Simulation on Gate-All-Around Cylindrical Transistor
2010 International Conference on System Science, Engineering Design and Manufacturing Informatization, 2010In this paper, we reported TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10 nm scaling. The GAAC transistor device physics, TCAD simulation have been discussed. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET ...
Deyuan Xiao +5 more
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SiGe Gate-All-around Nanosheet Reliability
2022 IEEE International Reliability Physics Symposium (IRPS), 2022Huimei Zhou +5 more
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TEM investigations of gate-all-around nanowire devices
Semiconductor Science and Technology, 2019Abstract Vertically stacked gate-all-around nanowires (GAA NWs) are considered a promising architecture for ultimately scaled complementary metal oxide semiconductor devices. These are the natural evolution of the fin-shaped field effect transistor (finFET) design and enable a better electrostatic control and a higher drive current ...
P Favia +11 more
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