Results 1 to 10 of about 1,055 (136)
Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
IEEE Access, 2022 Nous avons démontré un transistor à effet de champ (TFET) à effet de champ tunnel (NC) à capacité négative (GAA) à grille tout autour du nanofil basé sur l'hétérostructure GaAs/InN en utilisant la simulation TCAD. Dans l'empilement de grille, nous avons proposé une tricouche HfO2/TiO2/HfO2 comme diélectrique à K élevé et de l'oxyde de hafnium et de ...
Abdullah Al Mamun Mazumder +3 more
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The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor
Journal of Nano- and Electronic Physics, 2022 Починаючи з епохи Мура, для покращення електричних характеристик було введено використання передової архітектури пристроїв з наноматеріалів. У роботі повідомляється про дослідження характеристик довгоканального GaAs JGAA транзистора, включаючи квантово-механічний ефект.
Rasol, M. Faidzal +6 more
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DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures [PDF]
Le Journal de Physique IV, 1994 This paper describes the static I-V characteristics at cryogenic temperatures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator (SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold voltage and the transconductance upon cooling, which is observed both for ...
Simoen, E., Claeys, C.
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Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime [PDF]
Journal of Nano- and Electronic Physics, 2021 У роботі розглядається GAA MOSFET n-типу з різними довжинами затвора від 90 до 12 нм. Температурно-залежне моделювання проводиться з метою детального дослідження електричних характеристик. Діапазон температур, використаний у роботі, варіюється від 6 до 700 К, включаючи кріогенну температуру, і досліджується поведінка GAA MOSFET як напівпровідникового ...
Lakshmana Kumar, M., Biswajit, Jena
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Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application
Facta universitatis - series: Electronics and Energetics, 2015 Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length ( L g), channel thickness ( t Si ), and gate work function ( φ M ) on various ...
Biswajit Jena +5 more
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Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
Advanced Science, EarlyView.ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Advanced Energy Materials, EarlyView.Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park +19 more
wiley +1 more source
Guiding and Manipulating Light Fields in Microstructured Liquid Crystals
Advanced Physics Research, EarlyView.This review summarizes recent advances in guided‐wave optics enabled by microstructured liquid crystal (LC) devices, covering their fundamental material properties, key degree of freedom for dynamic light field manipulations. The advances of linear guided‐wave optics, nonlinear‐optics with spatial optical solitons, and microlasers in LC‐based devices ...
Shan‐shan Chang +2 more
wiley +1 more source
Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric
AIMS Electronics and Electrical Engineering, 2023 <abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
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