Results 21 to 30 of about 4,456 (178)
Abstract Background Sporadic venous malformation (VM) is associated with the hyperactivating p.L914F mutation in TIE2, a receptor tyrosine kinase essential for vascular development. This mutation is not found in hereditary VM, suggesting incompatibility with life when expressed during early vascular development.
Lindsay J. Bischoff +6 more
wiley +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy [PDF]
High indium content III–V materials are one of the most promising candidates for beyond Si CMOS technologies. We present InAs planar nanowire (NW) MOSFETs grown directly on a semi-insulating GaAs (100) substrate by the selective lateral epitaxy (SLE) method via the metal-seeded planar vapor-liquid-solid mechanism.
Chen Zhang +3 more
openaire +1 more source
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
This review summarizes recent progress in meta‐photonics with a focus on bound states in the continuum (BICs) as a powerful platform for light confinement and control. It covers fundamental concepts, design strategies across optical regimes, symmetry breaking for practical quasi‐BICs, tunable and AI‐assisted BIC devices, and emerging applications in ...
Hafiz Saad Khaliq, Hak‐Rin Kim
wiley +1 more source
A comparison of performance between double-gate and gate-all-around nanowire mosfet
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem.
Hamid, Fatimah A. +4 more
core +1 more source
In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the aim of simultaneously improving device performance as well as addressing the short channel effect (SCE).
Changwoo Han +7 more
core +1 more source
Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia +3 more
wiley +1 more source
Tailoring Model‐Based Systems Engineering for Sub‐100 g PlanarSats: A Power‐First View Stack
ABSTRACT This paper addresses how to apply model‐based systems engineering (MBSE) to ultrasmall planar satellites under severe power and resource constraints. PlanarSats are sub‐100‐gram spacecraft built as single printed‐circuit boards where the same surface must host both electronics and solar cells, so power generation, geometry, and component ...
Mehmet Şevket Uludaǧ +1 more
wiley +1 more source
Friedreich ataxia (FRDA) is a neurodegenerative disorder caused by an unstable GAA repeat expansion mutation within intron 1 of the FXN gene. However, the origins of the GAA repeat expansion, its unstable dynamics within different cells and tissues, and ...
Pinto, Ricardo Mouro +13 more
core +1 more source

