Results 1 to 10 of about 11,238 (159)

Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric

AIMS Electronics and Electrical Engineering, 2023
<abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
Hakkee Jung
openaire   +3 more sources

Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application

Facta universitatis - series: Electronics and Energetics, 2015
Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length ( L g), channel thickness ( t Si ), and gate work function ( φ M ) on various ...
Biswajit Jena, Kumar Pradhan Prasannajit, Prasanna Sahu, Sidharth Dash, Guru Mishra, Sushanta Mohapatra   +5 more
openaire   +3 more sources

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Advances in Natural Sciences: Nanoscience and Nanotechnology, 2015
In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (M) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed.
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu, S K Mohapatra   +5 more
openaire   +2 more sources

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

IEEE Access, 2022
Nous avons démontré un transistor à effet de champ (TFET) à effet de champ tunnel (NC) à capacité négative (GAA) à grille tout autour du nanofil basé sur l'hétérostructure GaAs/InN en utilisant la simulation TCAD. Dans l'empilement de grille, nous avons proposé une tricouche HfO2/TiO2/HfO2 comme diélectrique à K élevé et de l'oxyde de hafnium et de ...
Abdullah Al Mamun Mazumder, Kamal Hosen, Md. Sherajul Islam, Jeongwon Park   +3 more
openaire   +2 more sources

The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor

Journal of Nano- and Electronic Physics, 2022
Починаючи з епохи Мура, для покращення електричних характеристик було введено використання передової архітектури пристроїв з наноматеріалів. У роботі повідомляється про дослідження характеристик довгоканального GaAs JGAA транзистора, включаючи квантово-механічний ефект.
Rasol, M. Faidzal, T., Ainun, H., Fatimah, J., Zaharah, S. Z. A., Mastura, A., Rashidah, A. Riyad, Munawar   +6 more
openaire   +3 more sources

DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures [PDF]

Le Journal de Physique IV, 1994
This paper describes the static I-V characteristics at cryogenic temperatures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator (SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold voltage and the transconductance upon cooling, which is observed both for ...
Simoen, E., Claeys, C.
openaire   +2 more sources

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

IEEE Journal of the Electron Devices Society, 2019
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for
Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, M. Yeh, Yu-Ru Lin, Yung-Chun Wu   +8 more
semanticscholar   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

Advanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park, Saeed Pourasad, Jinhong Mun, Arunkumar Chitteth Rajan, Tae Hyeon Park, Anand Rohit, Mohammad Zafari, Tan‐Lien Pham, Eunjae Jung, Bonseung Koo, Miran Ha, Gi Beom Sim, Hyun Gyu Park, Won Woong Choi, Kwanghyeon Jo, Soohaeng Yoo Willow, David ChangMo Yang, Chang Woo Myung, Geunsik Lee, Kwang S. Kim   +19 more
wiley   +1 more source