Results 11 to 20 of about 11,867 (200)
Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier [PDF]
, 2023 This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit.
Amandeep Singh +11 more
core +1 more source
, 2021 This paper covers the Performance analysis of the Junctionless Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junctionless Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data.
PSIT COE, H (via Mendeley Data)
core +1 more source
Parametric Data Study of High-k Gate with Dielectric Pocket(DP) Gate All Around(GAA) FETs
, 2021 This paper presents the parameteric data study of the High-k Gate stack with Dielectric Pocket(DP) Gate All Around(GAA) FETs. A High K gate stack and dielectric pockets inside the channel have been used as a performance booster in the device.
PSIT COE, H (via Mendeley Data)
core +1 more source
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]
, 2012 We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A. +10 more
core +1 more source
Reliability Analysis Of Gate-All-Around Floating Gate (GAA-FG) With Variable Oxide Thickness For Flash Memory Cell [PDF]
, 2020 In this work, a concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low-k/high-k stack is implemented in Gate-All-Around Floating Gate (GAA-FG) memory cell to reduce P/E operational voltage, improve the efficiency of data ...
Farah Hamid +13 more
core +1 more source
Sub‑5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
, 2023 The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture.
Ruge Quhe (1619785) +9 more
core +1 more source
Optimization of 3D Stacked Nanosheets in 5nm Gate-all-around Transistor Technology
, 2021 An optimization study of silicon gate-all-around (GAA) devices based on technology computer-aided design tools is presented in this paper. GAA technology guidelines and solutions are provided for low power applications in the 5 nm CMOS technology node ...
Gundu, Anil Kumar +3 more
core +1 more source
, 2020 This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate ...
Yannan Zhang +4 more
core +1 more source
Guiding and Manipulating Light Fields in Microstructured Liquid Crystals
Advanced Physics Research, EarlyView.This review summarizes recent advances in guided‐wave optics enabled by microstructured liquid crystal (LC) devices, covering their fundamental material properties, key degree of freedom for dynamic light field manipulations. The advances of linear guided‐wave optics, nonlinear‐optics with spatial optical solitons, and microlasers in LC‐based devices ...
Shan‐shan Chang +2 more
wiley +1 more source
Clinical Pharmacology &Therapeutics, EarlyView.One‐third of epilepsy patients remain treatment‐resistant, underscoring the need for novel anti‐seizure medications (ASMs) and reliable biomarkers of central target engagement. Cortical hyperexcitability is a hallmark of epilepsy, making excitability a valuable pharmacodynamic biomarker for early‐phase drug development supporting go/no‐go decision ...
Catherine M. E. de Cuba +7 more
wiley +1 more source