Results 41 to 50 of about 1,279 (182)
Scaling Up Molecular Electron Spin Qubits Around a Core‐Shell Quantum Dot
Making assemblies of molecular nanomagnet (MNM) qubits is an essential step toward scalable quantum devices. Here, SH‐functionalized {Cr7Ni} antiferromagnetic rings with ability as MNM qubits were successfully grafted to the surface of fluorescent CdSe/ZnS quantum dots (QD).
Simon G. McAdams +8 more
wiley +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu +5 more
doaj +1 more source
Si-ring quantum-well GAA nanowire FET for 5 nm node CMOS integration
A novel structure for gate all-around (GAA) NW FET in the 5 nm scale has been proposed in this paper. This device consists of a germanium nanowire structure, the channel of which is surrounded by a ring-shaped silicon layer.
Payman Bahrami +3 more
doaj +1 more source
Wearable photovoltaic textiles: From device technologies to long‐term reliability
Wearable photovoltaic textiles are highlighted as reliable energy sources that combine solar cell efficiency with hierarchical textile‐specific mechanical and environmental durability. Structural and encapsulation strategies, including planarization, neutral‐axis engineering, and advanced barrier designs, enable waterproofing, washability, UV shielding,
Eun Gyo Jeong +5 more
wiley +1 more source
Applying a tailored, non‐sinusoidal low‐frequency voltage waveform bias to a commercial plasma reactor enables precise shaping of a quasi‐monoenergetic ion energy distribution function, opening a route to material‐selective, low‐damage processing for future 2D electronics.
Anton Pletzer +4 more
wiley +1 more source
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun +7 more
doaj +1 more source
Tailoring Model‐Based Systems Engineering for Sub‐100 g PlanarSats: A Power‐First View Stack
ABSTRACT This paper addresses how to apply model‐based systems engineering (MBSE) to ultrasmall planar satellites under severe power and resource constraints. PlanarSats are sub‐100‐gram spacecraft built as single printed‐circuit boards where the same surface must host both electronics and solar cells, so power generation, geometry, and component ...
Mehmet Şevket Uludaǧ +1 more
wiley +1 more source
Expression of CD23‐Cre does not impair the function of mature B cells or the establishment of the humoral immune response. Therefore, Flox‐only mice are suitable controls in studies using a CD23‐Cre mouse model. This reduces the number of surplus animals generated and supports the 3Rs principle in animal research.
Leonie Steinmetzer +12 more
wiley +1 more source
Research on Ultra-Large Sensing Range and High Linearity Cavity Sensing Devices
Gate-All-Around (GAA) transistors demonstrate significant potential for sensing applications due to their enhanced gate control and excellent scalability.
Yu-Ching Liao, Yu-Hsien Lin
doaj +1 more source

