Results 41 to 50 of about 1,221 (182)

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

IEEE Journal of the Electron Devices Society, 2018
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures.
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu   +6 more
doaj   +1 more source

Tailoring Model‐Based Systems Engineering for Sub‐100 g PlanarSats: A Power‐First View Stack

Systems Engineering, EarlyView.
ABSTRACT This paper addresses how to apply model‐based systems engineering (MBSE) to ultrasmall planar satellites under severe power and resource constraints. PlanarSats are sub‐100‐gram spacecraft built as single printed‐circuit boards where the same surface must host both electronics and solar cells, so power generation, geometry, and component ...
Mehmet Şevket Uludaǧ, Alim Rüstem Aslan   +1 more
wiley   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Si-ring quantum-well GAA nanowire FET for 5 nm node CMOS integration

AIP Advances, 2020
A novel structure for gate all-around (GAA) NW FET in the 5 nm scale has been proposed in this paper. This device consists of a germanium nanowire structure, the channel of which is surrounded by a ring-shaped silicon layer.
Payman Bahrami, Mohammad Reza Shayesteh, Majid Pourahmadi, Hadi Safdarkhani   +3 more
doaj   +1 more source

Transcranial Magnetic Stimulation as a Translational Biomarker in Early‐Phase Anti‐Seizure Medication Development: A Randomized, Double‐Blind, Placebo‐Controlled Study in Generalized Epilepsy

Clinical Pharmacology &Therapeutics, Volume 120, Issue 3, Page 673-683, September 2026.
One‐third of epilepsy patients remain treatment‐resistant, underscoring the need for novel anti‐seizure medications (ASMs) and reliable biomarkers of central target engagement. Cortical hyperexcitability is a hallmark of epilepsy, making excitability a valuable pharmacodynamic biomarker for early‐phase drug development supporting go/no‐go decision ...
Catherine M. E. de Cuba, Titia Q. Ruijs, Annika A. de Goede, Robert J. Doll, Maria Juachon, Michel J. A. M. van Putten, Geert Jan Groeneveld, Jules A. A. C. Heuberger   +7 more
wiley   +1 more source

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

IEEE Journal of the Electron Devices Society, 2022
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu   +7 more
doaj   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

An Instrument for Isomer‐Specific Action Spectroscopy of Charged Clusters: Electronic Spectra of C 14 + and Ca@C 60 +

Chemistry–Methods, Volume 6, Issue 8, August 2026.
Disentangling spectral congestion of a mixture of isomers in gas‐phase spectroscopy is critical. We present an instrument combining ion mobility, mass spectrometry, and spectroscopy in a cryogenic 3D Paul trap to investigate the isomer‐specific charged clusters and illustrate its performance with the electronic spectra of C14+ and Ca@C60+. Interpreting
Corentin Rossi, Anne P. Rasmussen, Zekai Li, Uma Namangalam, Bérenger Gans, Juraj Jašík, Jan Žabka, Hugo Bauduin, Christophe Charrière, Vira Davouloury, Jean‐Philippe Dugal, Jérome Guigand, Catherine Le Bris, Ugo Jacovella   +13 more
wiley   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric

AIMS Electronics and Electrical Engineering, 2023
<abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
openaire   +2 more sources