Results 31 to 40 of about 11,867 (200)

Edge effects characterization in gate-all-around SOI MOSFETs

, 1998
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis, Vandooren, Anne, Cristoloveanu, Sorin, IEEE International SOI Conference 1998, Colinge, Jean-Pierre   +4 more
core   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Impact of Ions and Radicals on Etch Selectivity and Fluorocarbon Polymerization in the Selective Dry Etching of Si0.7Ge0.3

Plasma Processes and Polymers, Volume 23, Issue 6, June 2026.
Ion screening in CF4 plasma reduces CFx+ ion flux while maintaining radical fluxes, suppressing fluorocarbon polymer accumulation. This enables smooth SiGe etching with selectivity up to 30:1 in multilayer stacks. ABSTRACT Selective etching of Si0.7Ge0.3 was investigated in CF4 inductively coupled plasma using an ion‐screening approach to decouple ion ...
Joosung Kang, Yongjoon Choi, Dongmin Yoon, Jihye Kim, U‐In Chung, Jeonghoon Son, Dae‐Hong Ko   +6 more
wiley   +1 more source

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

, 2018
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit, Martinie, S., N. Rambal, T. Ernst, C. Vizioz, S. Martinie, B. Previtali, Vinet, M., A. Jannaud, Lacord, J., Rozeau, O., Hartmann, J.-M., S. Barraud, J. Lacord, N. Bernier, Loup, V., Romano, G., L. Dourthe, Vizioz, C., Audoit, G., J.-M. Hartmann, G. Romano, Chalupa, Z., Previtali, B., Rambal, N., Lapras, V., Barraud, S., O. Rozeau, Bernier, N., Balan, V., V. Lapras, Ernst, T., M. Vinet, Jannaud, A., Z. Chalupa, V. Delaye, Dourthe, L., Casse, M., Delaye, V., V. Loup, M. Casse, V. Balan   +41 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Radiotherapy Enhancement by Gold Nanocluster‐functionalized Nanoliposomes Using Polychromatic Orthovoltage X‐ray Irradiation

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
Lipid drug carriers to which ultra‐small gold nanoparticles were added enabled more efficient radiotherapy of cultured pancreatic cancer tumors. These nanoparticles boosted radiation‐induced damage to tumors by generating more reactive molecules, though higher gold levels are needed for strong benefits.
Nazareth Milagros Carigga Gutierrez, Eaazhisai Kandiah, Sofia Leo, Erwan Dupont, Fabrizio Johnson‐Corrales, Marc‐André Hograindleur, Sarvenaz Keshmiri, Hélène Elleaume, Benoit Busser, Romain Haudecoeur, Véronique Jacob, Anthony Vella, Véronique Josserand, Maxime Henry, Jean‐Luc Coll, Amandine Hurbin, Xavier Le Guével, Mans Broekgaarden   +17 more
wiley   +1 more source

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability [PDF]

, 2018
Performance, scalability and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Nagy, Daniel, Seoane Iglesias, Natalia, Elmessary, Muhammad A., García Loureiro, Antonio Jesús, Karol Kalna, Muhammad A. Elmessary, Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Natalia Seoane, Indalecio Fernández, Guillermo   +10 more
core   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

Advanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie, Lara Franchin, Ludovica Pradetto Battel, Stefano Bonaldo, Alessandro Paccagnella, Biagio di Vizio, Stefano Agnoli, Rafael C. Hensel, Antonio Gaetano Ricciardulli, Simone Battiston, Mauro Sambi, Francesco Sedona, Paolo Samorì, Stefano Casalini   +13 more
wiley   +1 more source

Halide perovskites in wide‐spectrum photodetection

Bulletin of the Korean Chemical Society, Volume 47, Issue 5, Page 504-526, May 2026.
Recent advances in perovskite‐based photodetectors (PPDs), phototransistors, and photoconductors are technically discussed in this review. Moreover, the mechanism behind different harvesting processes in perovskite following the energy of photons is explained, where the gamma or x‐rays are ionizing.
Somayeh Gholipour, Reza Rahighi, Mohammad Panahi, Muhammad Naufal Lintangpradipto, Reza Ghayoor, Michael Saliba   +5 more
wiley   +1 more source

0nm Gate-Length Junctionless Gate-All-Around (JL-GAA) FETs Based 8T SRAM Design Under Process Variation Using a Cross-Layer Simulation

, 2020
-Gate-all-around (GAA) FETs is proposed as a choice for deeply scaled MOSFETs beyond the 10 nm technology node. In this paper, we present a device and circuit (8T SRAM) co-simulation work based on Junctionless-GAA (JL-GAA) FETs.
Alireza Shafaei, Yanzhi Wang, Luhao Wang, Shahin Nazarian, Massoud Pedram, Shuang Chen   +5 more
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