Results 31 to 40 of about 1,279 (182)

Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application

Facta universitatis - series: Electronics and Energetics, 2015
Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length ( L g), channel thickness ( t Si ), and gate work function ( φ M ) on various ...
Biswajit Jena, Kumar Pradhan Prasannajit, Prasanna Sahu, Sidharth Dash, Guru Mishra, Sushanta Mohapatra   +5 more
openaire   +2 more sources

DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures [PDF]

Le Journal de Physique IV, 1994
This paper describes the static I-V characteristics at cryogenic temperatures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator (SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold voltage and the transconductance upon cooling, which is observed both for ...
Simoen, E., Claeys, C.
openaire   +2 more sources

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

IEEE Journal of the Electron Devices Society, 2019
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for
Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu   +8 more
doaj   +1 more source

Parity‐Dependent THz Harmonic Generation in Electrically Pumped Micro‐Lasers Exploiting Topological Insulator–Metamaterial Gratings

Advanced Materials, EarlyView.
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare, Craig S. Knox, Ahmet Yagmur, Sara Ghayeb Zamharir, Lianhe Li, Satoshi Sasaki, A. Giles Davies, Edmund H. Linfield, Joshua R. Freeman, Miriam S. Vitiello   +9 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

Drug Repurposing for Treating NCOR‐Related Intellectual Disability

Advanced Science, EarlyView.
An autism‐associated NCOR1 heterozygous mutation upregulates NRGs and activates NRG backward signaling in hypothalamic GABAergic neurons in mouse models, leading to Gabra2 downregulation and cognitive deficits, which can be therapeutically targeted by repurposing FDA‐approved drugs.
Yan Kong, Wenjun Zhou, Yuxiang Sun, Zihan Huang, Zhiyue Liu, Udhaya Kumar. S, Chenyan Li, Yi Lu, Chengchuang Song, Veronica C. Ciliberto, Makenna Mack, Lana E. Kim, Zhaoyong Hu, Fang Luo, Aihua Cao, Zheng Sun   +15 more
wiley   +1 more source

Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates

IEEE Journal of the Electron Devices Society, 2015
A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a ...
Tung-Yu Liu, Fu-Ming Pan, Jeng-Tzong Sheu   +2 more
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height

IEEE Journal of the Electron Devices Society
This study presents a Technology Computer Aided Design (TCAD) and comprehensive Design-Technology Co-Optimization (DTCO) approach to evaluate and enhance power and performance in Gate-All-Around Nanosheet (GAA-Nsh) and Forksheet (Fsh) architectures.
Gautam Gaddemane, Pieter Schuddinck, Krishna Bhuwalka, Gerhard Rzepa, Gioele Mirabelli, Anshul Gupta, Jurgen Bommels, Philippe Matagne, Dmitry Yakimets, Hao Wu, Lei Hou, Geert Hellings, Changze Liu   +12 more
doaj   +1 more source

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

IEEE Journal of the Electron Devices Society, 2018
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures.
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu   +6 more
doaj   +1 more source