Results 51 to 60 of about 11,867 (200)

Low cost si nanowire biosensors by recrystallisation technologies

open access: yes, 2011
EThOS - Electronic Theses Online ServiceGBUnited ...
Sun, Kai
core  

Analitical modeling for square gate-all-around MOSFETs [PDF]

open access: yes, 2014
Two analytical models for square Gate All Around (GAA) MOSFETs has been introduced. The first part of this report include a quantum viewpoint and this first work has been published, while the second part approach a classical developed.
Moreno Pérez, Enrique
core   +1 more source

Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

open access: yes, 2012
In this paper, gate-all-around (GAA) tunneling field-effect transistors (TFETs) with hetero-gate dielectric (HG) materials have been simulated and their characteristics have been optimized as a function of the high-k dielectric length (Lhigh-k).
Choi, Woo Young   +2 more
core   +1 more source

Low-Temperature (Cryogenic) Transport in Gate-All-Around (GAA) Silicon Nanowire Field-Effect Transistor

open access: yes
This work explores the temperature dependency of the performance of an ultra-thin silicon nanowire (SiNW) gate-all-around field-effect transistor (GAA-FET). The nanowire is assumed coaxially aligned with an ideal cylindrical gate-all-around device.
Shiri, Daryoush,   +2 more
core   +1 more source

Comparative Study on Program/Erase Efficiency of 3-D SONOS Flash Memory Cell Transistor: Structural Approach from Multi-Gate (MG) to Gate-All-Around (GAA) FET

open access: yes, 2020
In this paper, we reported a non-planar 3-D SONOS memory, GAA (Gate-All-Around) SONOS (Silicon-Oxide-Nitride-Silicon-Oxide) memory according to demands for the high-density and low-power nonvolatile memory.
Kwan-Jae Choi   +16 more
core  

Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs [PDF]

open access: yes, 2012
We fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels.
De Micheli, Giovanni   +13 more
core   +1 more source

Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs

open access: yes, 2014
The metal-gate granularity-induced threshold voltage (V-T) variability and V-T mismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature ...
NAYAK, K   +5 more
core   +1 more source

Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures

open access: yes, 2023
Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics.
Zhao, Qing-Tai
core  

Effect of process parameter variation on ft in conventional and junctionless gate-all-around devices

open access: yes, 2015
In this paper we have studied the effect of process variations on unity gain cutoff frequency (ft ) in conventional and junctionless gate-all-around (GAA) transistors using TCAD simulations.
Muhammad Nor Hisyam Bin Kamarudin
core   +1 more source

Taming the Distribution of Light in Gate-All-Around Semiconductor Devices

open access: yes
Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting ...
Janusz Bogdanowicz (14484792)   +7 more
core   +1 more source

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