Results 51 to 60 of about 1,221 (182)

Optical Phased Arrays on Photonic Integrated Circuit Platforms: Challenges, Opportunities, and Future Applications

Nanophotonics, Volume 15, Issue 14, 27 July 2026.
Integrated optical phased arrays are emerging as scalable engines for solid‐state beam steering and programmable wavefront control. This Review maps the field from beam‐steering principles and core building blocks to material platforms, system‐level bottlenecks, and application frontiers, highlighting how heterogeneous integration, aperiodic ...
Jingwei Li, Yuyuan Han, Aoxiang Chen, Pengpeng Li, Xinglin Zhu, Guanbao Zhao, Luohan Peng, Huaibin Zheng   +7 more
wiley   +1 more source

Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor

AIP Advances, 2020
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
doaj   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, Volume 11, Issue 13, 8 July 2026.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Research on Ultra-Large Sensing Range and High Linearity Cavity Sensing Devices

IEEE Access
Gate-All-Around (GAA) transistors demonstrate significant potential for sensing applications due to their enhanced gate control and excellent scalability.
Yu-Ching Liao, Yu-Hsien Lin
doaj   +1 more source

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

Applied Sciences, 2020
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee   +9 more
doaj   +1 more source

Recent Progress and Future Prospects of LWIR T2SL InAs/GaSb Detectors on GaAs

Advanced Photonics Research, Volume 7, Issue 7, July 2026.
InAs/GaSb LWIR type‐II superlattices (T2SLs) on GaAs substrates are cost‐effective and offer higher yield. However, due to a relatively large lattice mismatch, a high density of threading dislocations is created, which is detrimental to device performance.
Paradeisa E. O’Dowd Phanis, Dhafer O. Alshahrani, Dominic C. M. Kwan, Diana L. Huffaker, Ezekiel Anyebe Anyebe, Manoj Kesaria   +5 more
wiley   +1 more source

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Nanomaterials, 2020
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several
Junjie Li, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Zhe Cao, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Jun Luo, Wenwu Wang, Henry H. Radamson   +26 more
doaj   +1 more source

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Advances in Natural Sciences: Nanoscience and Nanotechnology, 2015
In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (M) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed.
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu, S K Mohapatra   +5 more
openaire   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, Volume 13, Issue 40, 17 July 2026.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

3D NAND Flash Based on Planar Cells

Computers, 2017
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
doaj   +1 more source