Results 51 to 60 of about 1,279 (182)
Journal of Cardiovascular Electrophysiology, EarlyView.ABSTRACT Introduction Electrogram peak‐to‐peak voltage depends on atrial wall structure and mapping configuration. We evaluated the relationship between computed tomography–derived atrial wall thickness, intramyocardial fat, myocardial muscle thickness, and electrogram voltage obtained with omnipolar, bipolar, and unipolar mapping.
Cecilia Granata +21 more
wiley +1 more source
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Nanomaterials, 2020 Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several
Junjie Li +26 more
doaj +1 more source
Identification of TREK channels in mouse intracardiac ganglion neurons
The Journal of Physiology, EarlyView.Abstract figure legend Role of TWIK‐related K+ (TREK) channels in intracardiac ganglion neurons. CD‐1 mice were used to establish primary cultures of intracardiac neurons for immunochemical characterization and patch‐clamp electrophysiology. Intracardiac neurons express functional TREK channels, which modulate neuronal excitability by regulating ...
Ana Campos‐Rios +9 more
wiley +1 more source
Nanophotonics, Volume 15, Issue 20, 27 October 2026.Mitochondrial oxidative metabolism generates ROS. Downstream chemiexcitation triplet carbonyls, singlet oxygen; produces ultra‐weak photon emission (UPE). Energetic bounds restrict well‐coupled respiration to extremely weak, red/NIR‐biased emission. Stronger visible UPE indicates elevated oxidative flux, linking measured photon counts to redox state ...
Samuel Crowther +2 more
wiley +1 more source
AIP Advances, 2020 An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
doaj +1 more source
Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Applied Sciences, 2020 The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
doaj +1 more source
Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric
AIMS Electronics and Electrical Engineering, 2023 <abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
openaire +2 more sources
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, Volume 13, Issue 20, 21 October 2026.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Artificial Intelligence‐Driven Inverse Design of Singlet Fission Candidates in the Acene family
Advanced Science, Volume 13, Issue 59, 23 October 2026.In this work, we describe an AI‐driven inverse design platform predicting S1 and T1 energies across acenes with high accuracy. Using Hammett σ constants as descriptors and RNN models coupled with optimization algorithms, it efficiently explores ≈1014 structures, uncovering novel SF candidates from benzene to pentacene. Freely accessible at https://alba.
Rafael G. Uceda +9 more
wiley +1 more source
3D NAND Flash Based on Planar Cells
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
doaj +1 more source