Results 61 to 70 of about 1,221 (182)

Guiding and Manipulating Light Fields in Microstructured Liquid Crystals

Advanced Physics Research, Volume 5, Issue 7, July 2026.
This review summarizes recent advances in guided‐wave optics enabled by microstructured liquid crystal (LC) devices, covering their fundamental material properties, key degree of freedom for dynamic light field manipulations. The advances of linear guided‐wave optics, nonlinear‐optics with spatial optical solitons, and microlasers in LC‐based devices ...
Shan‐shan Chang, Yong‐shuai Li, Jin‐hui Chen   +2 more
wiley   +1 more source

Trends in Aquatic Environmental DNA Research in Alaska

Ecology and Evolution, Volume 16, Issue 7, July 2026.
Environmental DNA (eDNA) analysis is an emerging tool with significant potential to advance biomonitoring, particularly in remote and logistically challenging environments. To evaluate the state of eDNA research in Alaska, we conducted a literature review and a regional survey and results provide the first comprehensive overview of eDNA research in ...
Brandi Kamermans, Maggie Harings, Rachel Lekanoff, Laura E. Timm, Erik Schoen, J. Andrés López, Jessica R. Glass   +6 more
wiley   +1 more source

Recent Advances in Photonic Bound States in the Continuum: From Fundamentals to Engineering and Implementation

Laser &Photonics Reviews, Volume 20, Issue 13, 8 July 2026.
This review summarizes recent progress in meta‐photonics with a focus on bound states in the continuum (BICs) as a powerful platform for light confinement and control. It covers fundamental concepts, design strategies across optical regimes, symmetry breaking for practical quasi‐BICs, tunable and AI‐assisted BIC devices, and emerging applications in ...
Hafiz Saad Khaliq, Hak‐Rin Kim
wiley   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

The investigation of the diameter dimension effect on the Si nano-tube transistors

AIP Advances, 2016
The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance.
M.-H. Liao, C.-H. Yeh, C.-C. Lee, C.-P. Wang   +3 more
doaj   +1 more source

FinFET to GAA MBCFET: A Review and Insights

IEEE Access
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures.
Rinku Rani Das, T. R. Rajalekshmi, Alex James   +2 more
doaj   +1 more source

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Applied Sciences, 2019
The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of ...
Chao Zhao, Jinjuan Xiang
doaj   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

IEEE Journal of the Electron Devices Society, 2018
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant ...
Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane   +4 more
doaj   +1 more source

Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime

IEEE Open Journal of Nanotechnology
This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO2 and HfO2, each having a ...
Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain   +10 more
doaj   +1 more source