Results 61 to 70 of about 11,867 (200)

Effects of high-k dielectric materials on electrical performance of double gate and gate-all-around MOSFET

, 2020
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) MOSFET using different high permittivity (high-k) gate dielectric materials.
Jawatankuasa Kerja PSM UTHM
core   +1 more source

High threshold voltage matching performance on gate-all-around MOSFET

, 2007
International audienceFor the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped
Harrison, S., Coronel, P., Pouydebasque, A., Cathignol, A., Cerrutti, R., Ghibaudo, G., Cros, A., Rochereau, K., Skotnicki, T.   +8 more
core   +1 more source

Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

, 2016
In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si Gate-All-Around (GAA) Nanowire MOSFET (NWFET) based 6-T SRAM bit-cell stability and performance considering metal-gate granularity (MGG) induced ...
Nayak, Kaushik, Gundapaneni, S, Bajaj, M, Rao, V R, Nayak, K   +4 more
core   +1 more source

Characterization and Reliability of Gate-All-Around Poly-Si TFTs with Multinanowire Channels

, 2010
The electrical characteristics and reliability of n-type gate-all-around (GAA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with multi-nanowire channels are investigated.
Si-Ming Chiou, Han-Wen Liu, Chung-En Hung, Fang-Hsing Wang   +3 more
core   +1 more source

Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET

AIMS Electronics and Electrical Engineering
<p>An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process.
openaire   +2 more sources

A Review of Reliability in Gate-All-Around Nanosheet Devices

The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET ...
Miaomiao Wang
core   +1 more source

3D Nanoscale Imaging of Semiconductor Films for GAA (Gate All Around) Device Development

Microscopy and Microanalysis, 2022
Pritesh Parikh, Darshan Jaware, Jiangtao Zhu   +2 more
openaire   +1 more source

3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]

Nat Commun
Karapetyan S, Zeltmann SE, Wilk G, Chen TK, Hou VD, Muller DA.   +5 more
europepmc   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. [PDF]

Nanomaterials (Basel)
Qian L, Liu T, Liao M, Guo X, Xu S, Xu M, Zhang DW.   +6 more
europepmc   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

Nat Commun
Xue C, Tan C, Gao X, Tang J, Sun W, Yin Y, Wang M, Gao X, An H, Fu B, Liu W, Wang Y, Li Y, Ding F, Peng H.   +14 more
europepmc   +1 more source