Results 41 to 50 of about 4,617 (218)
The relentless advancement of the semiconductor industry continues to be fueled by the pursuit of enhanced transistor performance. As CMOS technology undergoes aggressive scaling to enable higher integration densities in modern integrated circuits (ICs),
J. Ajayan +3 more
doaj +1 more source
Edge effects characterization in gate-all-around SOI MOSFETs [PDF]
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis +4 more
core +1 more source
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for
Lun-Chun Chen +8 more
doaj +1 more source
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee +2 more
wiley +1 more source
Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets [PDF]
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit +41 more
core +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park +19 more
wiley +1 more source
0nm Gate-Length Junctionless Gate-All-Around (JL-GAA) FETs Based 8T SRAM Design Under Process Variation Using a Cross-Layer Simulation [PDF]
-Gate-all-around (GAA) FETs is proposed as a choice for deeply scaled MOSFETs beyond the 10 nm technology node. In this paper, we present a device and circuit (8T SRAM) co-simulation work based on Junctionless-GAA (JL-GAA) FETs.
Alireza Shafaei +5 more
core
A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a ...
Tung-Yu Liu +2 more
doaj +1 more source
One‐third of epilepsy patients remain treatment‐resistant, underscoring the need for novel anti‐seizure medications (ASMs) and reliable biomarkers of central target engagement. Cortical hyperexcitability is a hallmark of epilepsy, making excitability a valuable pharmacodynamic biomarker for early‐phase drug development supporting go/no‐go decision ...
Catherine M. E. de Cuba +7 more
wiley +1 more source

