Results 41 to 50 of about 4,456 (178)
Halide perovskites in wide‐spectrum photodetection
Bulletin of the Korean Chemical Society, Volume 47, Issue 5, Page 504-526, May 2026.Recent advances in perovskite‐based photodetectors (PPDs), phototransistors, and photoconductors are technically discussed in this review. Moreover, the mechanism behind different harvesting processes in perovskite following the energy of photons is explained, where the gamma or x‐rays are ionizing.
Somayeh Gholipour +5 more
wiley +1 more source
Engineering Reports, Volume 8, Issue 5, May 2026.This graphical abstract compares circuit‐based, signal‐processing‐based, and intelligent‐learning‐based approaches for secondary arc‐fault detection, highlighting their key principles and practical advantages. ABSTRACT Reliable detection of free‐air electric arc faults in high‐voltage overhead transmission lines, together with accurate discrimination ...
Mahyar Abasi +2 more
wiley +1 more source
, 2020 -Gate-all-around (GAA) FETs is proposed as a choice for deeply scaled MOSFETs beyond the 10 nm technology node. In this paper, we present a device and circuit (8T SRAM) co-simulation work based on Junctionless-GAA (JL-GAA) FETs.
Alireza Shafaei +5 more
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Friedreich ataxia: Investigating the relationships between mismatch repair gene expression, FXN gene expression and GAA repeat instability in human and mouse cells and tissues [PDF]
, 2012 This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.Friedreich ataxia (FRDA) is the most common inherited ataxia disorder, caused by a GAA repeat expansion mutation within the first intron of the FXN gene ...
Ezzatizadeh, Vahid
core
Energy Technology, Volume 14, Issue 5, May 2026.A symmetric boost converter combining a Meissner oscillator with a forward stage enables ultralow‐voltage energy harvesting from thermoelectric generators. The prototype cold‐starts at 18 mV and sustains operation down to 6 mV, achieving > 63% efficiency across 20–50 mV inputs.
Uttunga Gopal Shinde +2 more
wiley +1 more source
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability [PDF]
, 2018 Performance, scalability and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Nagy, Daniel +10 more
core +1 more source
, 2010 An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping ...
Zhang, Lining +4 more
core +1 more source
Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET
, 2010 In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed.
Zhang, Lining +5 more
core +1 more source
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
, 2021 Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced electrostatic gate control, and suppression of parasitic leakage current ...
Gorchichko M. +8 more
core +1 more source
Electrostatic Analysis of Gate All Around (GAA) Nanowire over FinFET [PDF]
, 2017 : CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control on subthreshold leakage and saturation current over ...
core