Results 41 to 50 of about 1,279 (182)

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

IEEE Journal of the Electron Devices Society, 2018
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures.
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu   +6 more
doaj   +1 more source

Scaling Up Molecular Electron Spin Qubits Around a Core‐Shell Quantum Dot

Chemistry – A European Journal, EarlyView.
Making assemblies of molecular nanomagnet (MNM) qubits is an essential step toward scalable quantum devices. Here, SH‐functionalized {Cr7Ni} antiferromagnetic rings with ability as MNM qubits were successfully grafted to the surface of fluorescent CdSe/ZnS quantum dots (QD).
Simon G. McAdams, Jesus Ferrando‐Soria, Paul D. McNaughter, Edward A. Lewis, Sarah J. Haigh, David J. Lewis, Richard E. P. Winpenny, Paul O'Brien, Floriana Tuna   +8 more
wiley   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Si-ring quantum-well GAA nanowire FET for 5 nm node CMOS integration

AIP Advances, 2020
A novel structure for gate all-around (GAA) NW FET in the 5 nm scale has been proposed in this paper. This device consists of a germanium nanowire structure, the channel of which is surrounded by a ring-shaped silicon layer.
Payman Bahrami, Mohammad Reza Shayesteh, Majid Pourahmadi, Hadi Safdarkhani   +3 more
doaj   +1 more source

Wearable photovoltaic textiles: From device technologies to long‐term reliability

InfoScience, EarlyView.
Wearable photovoltaic textiles are highlighted as reliable energy sources that combine solar cell efficiency with hierarchical textile‐specific mechanical and environmental durability. Structural and encapsulation strategies, including planarization, neutral‐axis engineering, and advanced barrier designs, enable waterproofing, washability, UV shielding,
Eun Gyo Jeong, So Yeong Jeong, Yongmin Jeon, Myung Sub Lim, Seo‐Yoon Bae, Sung‐Min Lee   +5 more
wiley   +1 more source

Precise Sputter Control by Tailored Waveform Biasing for Selective Ablation in Future 2D Electronics Manufacturing

Small Methods, EarlyView.
Applying a tailored, non‐sinusoidal low‐frequency voltage waveform bias to a commercial plasma reactor enables precise shaping of a quasi‐monoenergetic ion energy distribution function, opening a route to material‐selective, low‐damage processing for future 2D electronics.
Anton Pletzer, Jonas Giesekus, Alexander Litke, Julian Schulze, Claudia Bock   +4 more
wiley   +1 more source

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

IEEE Journal of the Electron Devices Society, 2022
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu   +7 more
doaj   +1 more source

Tailoring Model‐Based Systems Engineering for Sub‐100 g PlanarSats: A Power‐First View Stack

Systems Engineering, EarlyView.
ABSTRACT This paper addresses how to apply model‐based systems engineering (MBSE) to ultrasmall planar satellites under severe power and resource constraints. PlanarSats are sub‐100‐gram spacecraft built as single printed‐circuit boards where the same surface must host both electronics and solar cells, so power generation, geometry, and component ...
Mehmet Şevket Uludaǧ, Alim Rüstem Aslan   +1 more
wiley   +1 more source

Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric

AIMS Electronics and Electrical Engineering, 2023
<abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
openaire   +2 more sources