Results 41 to 50 of about 4,617 (218)

Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives

open access: yesIEEE Journal of the Electron Devices Society
The relentless advancement of the semiconductor industry continues to be fueled by the pursuit of enhanced transistor performance. As CMOS technology undergoes aggressive scaling to enable higher integration densities in modern integrated circuits (ICs),
J. Ajayan   +3 more
doaj   +1 more source

Edge effects characterization in gate-all-around SOI MOSFETs [PDF]

open access: yes, 1998
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis   +4 more
core   +1 more source

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

open access: yesIEEE Journal of the Electron Devices Society, 2019
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for
Lun-Chun Chen   +8 more
doaj   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee   +2 more
wiley   +1 more source

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets [PDF]

open access: yes, 2018
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit   +41 more
core   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

open access: yesAdvanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park   +19 more
wiley   +1 more source

0nm Gate-Length Junctionless Gate-All-Around (JL-GAA) FETs Based 8T SRAM Design Under Process Variation Using a Cross-Layer Simulation [PDF]

open access: yes, 2020
-Gate-all-around (GAA) FETs is proposed as a choice for deeply scaled MOSFETs beyond the 10 nm technology node. In this paper, we present a device and circuit (8T SRAM) co-simulation work based on Junctionless-GAA (JL-GAA) FETs.
Alireza Shafaei   +5 more
core  

Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates

open access: yesIEEE Journal of the Electron Devices Society, 2015
A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a ...
Tung-Yu Liu   +2 more
doaj   +1 more source

Transcranial Magnetic Stimulation as a Translational Biomarker in Early‐Phase Anti‐Seizure Medication Development: A Randomized, Double‐Blind, Placebo‐Controlled Study in Generalized Epilepsy

open access: yesClinical Pharmacology &Therapeutics, EarlyView.
One‐third of epilepsy patients remain treatment‐resistant, underscoring the need for novel anti‐seizure medications (ASMs) and reliable biomarkers of central target engagement. Cortical hyperexcitability is a hallmark of epilepsy, making excitability a valuable pharmacodynamic biomarker for early‐phase drug development supporting go/no‐go decision ...
Catherine M. E. de Cuba   +7 more
wiley   +1 more source

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