Results 51 to 60 of about 4,617 (218)

GAA super game centre research report [PDF]

, 2015
First paragraph: Drop out from youth sport participation is a global issue that has emerged to become a major public health concern around the world. The initial catalyst for this multi-year research effort stemmed from a trend within GAA participation ...
Lavallee, David, Sheridan, Daragh, Coffee, Pete   +2 more
core  

Expression of mutant TIE2 p.L914F during mouse development causes embryonic lethality and defects in vascular remodeling

Developmental Dynamics, EarlyView.
Abstract Background Sporadic venous malformation (VM) is associated with the hyperactivating p.L914F mutation in TIE2, a receptor tyrosine kinase essential for vascular development. This mutation is not found in hereditary VM, suggesting incompatibility with life when expressed during early vascular development.
Lindsay J. Bischoff, Sandra Schrenk, Kara Soroko, Chhiring Sherpa, Ashok Arasu, Damien Reynaud, Elisa Boscolo   +6 more
wiley   +1 more source

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET [PDF]

, 2010
An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping ...
Zhang, Lining, Ma, Chenyue, Chan, Mansun, He, Jin, Lin, Xinnan   +4 more
core   +1 more source

Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height

IEEE Journal of the Electron Devices Society
This study presents a Technology Computer Aided Design (TCAD) and comprehensive Design-Technology Co-Optimization (DTCO) approach to evaluate and enhance power and performance in Gate-All-Around Nanosheet (GAA-Nsh) and Forksheet (Fsh) architectures.
Gautam Gaddemane, Pieter Schuddinck, Krishna Bhuwalka, Gerhard Rzepa, Gioele Mirabelli, Anshul Gupta, Jurgen Bommels, Philippe Matagne, Dmitry Yakimets, Hao Wu, Lei Hou, Geert Hellings, Changze Liu   +12 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET [PDF]

, 2010
In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed.
Zhang, Lining, He, Frank, Guo, Xinjie, Zhang, Chenfei, Chan, Mansun, Wang, Shaodi   +5 more
core   +1 more source

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors [PDF]

, 2021
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced electrostatic gate control, and suppression of parasitic leakage current ...
Gorchichko M., Zhang E. X., Linten D., Mitard J., Wang P., Fleetwood D. M., Bonaldo S., Reed R. A., Schrimpf R. D.   +8 more
core   +1 more source

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

IEEE Journal of the Electron Devices Society, 2018
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures.
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu   +6 more
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

IEEE Journal of the Electron Devices Society
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing
Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source