Results 51 to 60 of about 1,279 (182)
Expression of CD23‐Cre does not impair the function of mature B cells or the establishment of the humoral immune response. Therefore, Flox‐only mice are suitable controls in studies using a CD23‐Cre mouse model. This reduces the number of surplus animals generated and supports the 3Rs principle in animal research.
Leonie Steinmetzer +12 more
wiley +1 more source
Research on Ultra-Large Sensing Range and High Linearity Cavity Sensing Devices
Gate-All-Around (GAA) transistors demonstrate significant potential for sensing applications due to their enhanced gate control and excellent scalability.
Yu-Ching Liao, Yu-Hsien Lin
doaj +1 more source
ABSTRACT Introduction Electrogram peak‐to‐peak voltage depends on atrial wall structure and mapping configuration. We evaluated the relationship between computed tomography–derived atrial wall thickness, intramyocardial fat, myocardial muscle thickness, and electrogram voltage obtained with omnipolar, bipolar, and unipolar mapping.
Cecilia Granata +21 more
wiley +1 more source
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several
Junjie Li +26 more
doaj +1 more source
Identification of TREK channels in mouse intracardiac ganglion neurons
Abstract figure legend Role of TWIK‐related K+ (TREK) channels in intracardiac ganglion neurons. CD‐1 mice were used to establish primary cultures of intracardiac neurons for immunochemical characterization and patch‐clamp electrophysiology. Intracardiac neurons express functional TREK channels, which modulate neuronal excitability by regulating ...
Ana Campos‐Rios +9 more
wiley +1 more source
Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime
In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (M) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed.
B Jena +5 more
openaire +1 more source
Mitochondrial oxidative metabolism generates ROS. Downstream chemiexcitation triplet carbonyls, singlet oxygen; produces ultra‐weak photon emission (UPE). Energetic bounds restrict well‐coupled respiration to extremely weak, red/NIR‐biased emission. Stronger visible UPE indicates elevated oxidative flux, linking measured photon counts to redox state ...
Samuel Crowther +2 more
wiley +1 more source
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
doaj +1 more source
Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source

