Results 61 to 70 of about 1,279 (182)

Artificial Intelligence‐Driven Inverse Design of Singlet Fission Candidates in the Acene family

Advanced Science, Volume 13, Issue 59, 23 October 2026.
In this work, we describe an AI‐driven inverse design platform predicting S1 and T1 energies across acenes with high accuracy. Using Hammett σ constants as descriptors and RNN models coupled with optimization algorithms, it efficiently explores ≈1014 structures, uncovering novel SF candidates from benzene to pentacene. Freely accessible at https://alba.
Rafael G. Uceda, Boris Pérez‐Cañedo, Sandra Míguez‐Lago, Carlos M. Cruz, Joaquín J. Torres, Omar Núñez, Luis Álvarez de Cienfuegos, Antonio J. Mota, Delia Miguel, Juan M. Cuerva   +9 more
wiley   +1 more source

3D NAND Flash Based on Planar Cells

Computers, 2017
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
doaj   +1 more source

Cross‐scale Material‐Structure Synergy for 2D Metamaterials: Toward Customizable Intelligent Electromagnetic Manipulation in Multiphysics Fields

Advanced Science, Volume 13, Issue 58, 19 October 2026.
Recent advances in metasurface‐enabled low‐observable technologies are reviewed from the perspective of cross‐scale material–structure synergy. Electromagnetic, thermal, optical, and acoustic stealth are highlighted together with dynamic tuning, programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and ...
Shuhao Wang, Xing Yang, Liping Liu, Yang Peng, Yangyang Wang, Hualiang Lv   +5 more
wiley   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

Advanced Energy Materials, Volume 16, Issue 39, 21 October 2026.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park, Saeed Pourasad, Jinhong Mun, Arunkumar Chitteth Rajan, Tae Hyeon Park, Anand Rohit, Mohammad Zafari, Tan‐Lien Pham, Eunjae Jung, Bonseung Koo, Miran Ha, Gi Beom Sim, Hyun Gyu Park, Won Woong Choi, Kwanghyeon Jo, Soohaeng Yoo Willow, David ChangMo Yang, Chang Woo Myung, Geunsik Lee, Kwang S. Kim   +19 more
wiley   +1 more source

Sensitive Aptameric Sensing Platform Utilizing Reduced Graphene Oxide Field‐Effect Transistor

Chemistry–Methods, Volume 6, Issue 10, October 2026.
The paper reports the development of a scalable, high‐performance reduced graphene oxide (RGO‐FET) biosensor engineered for ultra‐sensitive serotonin detection. Key breakthroughs are femtomolar sensitivity, low cost relative to achievable sensitivity and stability against fouling.
Co Dang Pham, Sina Jamali, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +3 more
wiley   +1 more source

The investigation of the diameter dimension effect on the Si nano-tube transistors

AIP Advances, 2016
The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance.
M.-H. Liao, C.-H. Yeh, C.-C. Lee, C.-P. Wang   +3 more
doaj   +1 more source

FinFET to GAA MBCFET: A Review and Insights

IEEE Access
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures.
Rinku Rani Das, T. R. Rajalekshmi, Alex James   +2 more
doaj   +1 more source

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Applied Sciences, 2019
The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of ...
Chao Zhao, Jinjuan Xiang
doaj   +1 more source

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

IEEE Journal of the Electron Devices Society
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated.
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang   +7 more
doaj   +1 more source

Temperature-dependent electrical characteristics of selectively crystallized InGaOx gate-all-around nanosheet FETs

Applied Physics Express
We investigate the temperature-dependent electrical characteristics and bias-temperature-instability (BTI) of InGaOx gate-all-around (GAA) nanosheet FETs with different HfO _2 thicknesses. The 5 nm-HfO _2 GAA device shows higher transconductance (1550 μS
Anlan Chen, Ki-Woong Park, Xingyu Huang, Kota Sakai, Masaharu Kobayashi   +4 more
doaj   +1 more source