Results 61 to 70 of about 4,617 (218)

Si-ring quantum-well GAA nanowire FET for 5 nm node CMOS integration

AIP Advances, 2020
A novel structure for gate all-around (GAA) NW FET in the 5 nm scale has been proposed in this paper. This device consists of a germanium nanowire structure, the channel of which is surrounded by a ring-shaped silicon layer.
Payman Bahrami, Mohammad Reza Shayesteh, Majid Pourahmadi, Hadi Safdarkhani   +3 more
doaj   +1 more source

InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy [PDF]

IEEE Electron Device Letters, 2015
High indium content III–V materials are one of the most promising candidates for beyond Si CMOS technologies. We present InAs planar nanowire (NW) MOSFETs grown directly on a semi-insulating GaAs (100) substrate by the selective lateral epitaxy (SLE) method via the metal-seeded planar vapor-liquid-solid mechanism.
Chen Zhang, Wonsik Choi, Parsian K. Mohseni, Xiuling Li   +3 more
openaire   +1 more source

Tailoring Model‐Based Systems Engineering for Sub‐100 g PlanarSats: A Power‐First View Stack

Systems Engineering, EarlyView.
ABSTRACT This paper addresses how to apply model‐based systems engineering (MBSE) to ultrasmall planar satellites under severe power and resource constraints. PlanarSats are sub‐100‐gram spacecraft built as single printed‐circuit boards where the same surface must host both electronics and solar cells, so power generation, geometry, and component ...
Mehmet Şevket Uludaǧ, Alim Rüstem Aslan   +1 more
wiley   +1 more source

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

IEEE Journal of the Electron Devices Society, 2022
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric ...
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu   +7 more
doaj   +1 more source

Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric

AIMS Electronics and Electrical Engineering, 2023
<abstract><p>An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant
openaire   +2 more sources

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Advances in Natural Sciences: Nanoscience and Nanotechnology, 2015
In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (M) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed.
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu, S K Mohapatra   +5 more
openaire   +1 more source

An Instrument for Isomer‐Specific Action Spectroscopy of Charged Clusters: Electronic Spectra of C 14 + and Ca@C 60 +

Chemistry–Methods, Volume 6, Issue 8, August 2026.
Disentangling spectral congestion of a mixture of isomers in gas‐phase spectroscopy is critical. We present an instrument combining ion mobility, mass spectrometry, and spectroscopy in a cryogenic 3D Paul trap to investigate the isomer‐specific charged clusters and illustrate its performance with the electronic spectra of C14+ and Ca@C60+. Interpreting
Corentin Rossi, Anne P. Rasmussen, Zekai Li, Uma Namangalam, Bérenger Gans, Juraj Jašík, Jan Žabka, Hugo Bauduin, Christophe Charrière, Vira Davouloury, Jean‐Philippe Dugal, Jérome Guigand, Catherine Le Bris, Ugo Jacovella   +13 more
wiley   +1 more source

Optical Phased Arrays on Photonic Integrated Circuit Platforms: Challenges, Opportunities, and Future Applications

Nanophotonics, Volume 15, Issue 14, 27 July 2026.
Integrated optical phased arrays are emerging as scalable engines for solid‐state beam steering and programmable wavefront control. This Review maps the field from beam‐steering principles and core building blocks to material platforms, system‐level bottlenecks, and application frontiers, highlighting how heterogeneous integration, aperiodic ...
Jingwei Li, Yuyuan Han, Aoxiang Chen, Pengpeng Li, Xinglin Zhu, Guanbao Zhao, Luohan Peng, Huaibin Zheng   +7 more
wiley   +1 more source

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs [PDF]

, 2019
International audienceVertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported.
Grap, Thomas, Trellenkamp, Stefan, Buca, Dan, Liu, Mingshan, von den Driesch, Nils, Knoch, Joachim, Hartmann, Jean-Michel, Mertens, Konstantin, Zhao, Qing- Tai, Zhao, Qing-Tai   +9 more
core   +1 more source