Results 61 to 70 of about 4,456 (178)

Effect of process parameter variation on ft in conventional and junctionless gate-all-around devices

, 2015
In this paper we have studied the effect of process variations on unity gain cutoff frequency (ft ) in conventional and junctionless gate-all-around (GAA) transistors using TCAD simulations.
Muhammad Nor Hisyam Bin Kamarudin
core   +1 more source

Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures

, 2023
Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics.
Zhao, Qing-Tai
core  

Taming the Distribution of Light in Gate-All-Around Semiconductor Devices

Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting ...
Janusz Bogdanowicz (14484792), Yusuke Oniki (17803379), Hans Mertens (17803385), Anne-Laure Charley (17803388), Thomas Nuytten (3126453), Stefanie Sergeant (3915995), Pallavi Puttarame Gowda (17803382), Andrzej Gawlik (17803376)   +7 more
core   +1 more source

High threshold voltage matching performance on gate-all-around MOSFET

, 2007
International audienceFor the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped
Harrison, S., Coronel, P., Pouydebasque, A., Cathignol, A., Cerrutti, R., Ghibaudo, G., Cros, A., Rochereau, K., Skotnicki, T.   +8 more
core   +1 more source

Effects of high-k dielectric materials on electrical performance of double gate and gate-all-around MOSFET

, 2020
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) MOSFET using different high permittivity (high-k) gate dielectric materials.
Jawatankuasa Kerja PSM UTHM
core   +1 more source

Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

, 2016
In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si Gate-All-Around (GAA) Nanowire MOSFET (NWFET) based 6-T SRAM bit-cell stability and performance considering metal-gate granularity (MGG) induced ...
Nayak, Kaushik, Gundapaneni, S, Bajaj, M, Rao, V R, Nayak, K   +4 more
core   +1 more source

Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET

AIMS Electronics and Electrical Engineering
<p>An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process.
openaire   +2 more sources

3D Nanoscale Imaging of Semiconductor Films for GAA (Gate All Around) Device Development

Microscopy and Microanalysis, 2022
Pritesh Parikh, Darshan Jaware, Jiangtao Zhu   +2 more
openaire   +1 more source

3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]

Nat Commun
Karapetyan S, Zeltmann SE, Wilk G, Chen TK, Hou VD, Muller DA.   +5 more
europepmc   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. [PDF]

Nanomaterials (Basel)
Qian L, Liu T, Liao M, Guo X, Xu S, Xu M, Zhang DW.   +6 more
europepmc   +1 more source