Results 81 to 90 of about 4,617 (218)
Guiding and Manipulating Light Fields in Microstructured Liquid Crystals
Advanced Physics Research, Volume 5, Issue 7, July 2026.This review summarizes recent advances in guided‐wave optics enabled by microstructured liquid crystal (LC) devices, covering their fundamental material properties, key degree of freedom for dynamic light field manipulations. The advances of linear guided‐wave optics, nonlinear‐optics with spatial optical solitons, and microlasers in LC‐based devices ...
Shan‐shan Chang +2 more
wiley +1 more source
3D NAND Flash Based on Planar Cells
Computers, 2017 In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all ...
Andrea Silvagni
doaj +1 more source
Trends in Aquatic Environmental DNA Research in Alaska
Ecology and Evolution, Volume 16, Issue 7, July 2026.Environmental DNA (eDNA) analysis is an emerging tool with significant potential to advance biomonitoring, particularly in remote and logistically challenging environments. To evaluate the state of eDNA research in Alaska, we conducted a literature review and a regional survey and results provide the first comprehensive overview of eDNA research in ...
Brandi Kamermans +6 more
wiley +1 more source
Laser &Photonics Reviews, Volume 20, Issue 13, 8 July 2026.This review summarizes recent progress in meta‐photonics with a focus on bound states in the continuum (BICs) as a powerful platform for light confinement and control. It covers fundamental concepts, design strategies across optical regimes, symmetry breaking for practical quasi‐BICs, tunable and AI‐assisted BIC devices, and emerging applications in ...
Hafiz Saad Khaliq, Hak‐Rin Kim
wiley +1 more source
Low-Temperature (Cryogenic) Transport in Gate-All-Around (GAA) Silicon Nanowire Field-Effect Transistor [PDF]
This work explores the temperature dependency of the performance of an ultra-thin silicon nanowire (SiNW) gate-all-around field-effect transistor (GAA-FET). The nanowire is assumed coaxially aligned with an ideal cylindrical gate-all-around device.
Shiri, Daryoush, +2 more
core +1 more source
Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling Field-Effect Transistors [PDF]
, 2012 In this paper, gate-all-around (GAA) tunneling field-effect transistors (TFETs) with hetero-gate dielectric (HG) materials have been simulated and their characteristics have been optimized as a function of the high-k dielectric length (Lhigh-k).
Choi, Woo Young +2 more
core +1 more source
Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia +3 more
wiley +1 more source
Friedreich ataxia: Investigating the relationships between mismatch repair gene expression, FXN gene expression and GAA repeat instability in human and mouse cells and tissues [PDF]
, 2012 This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.Friedreich ataxia (FRDA) is the most common inherited ataxia disorder, caused by a GAA repeat expansion mutation within the first intron of the FXN gene ...
Ezzatizadeh, Vahid
core
Comparative Study on Program/Erase Efficiency of 3-D SONOS Flash Memory Cell Transistor: Structural Approach from Multi-Gate (MG) to Gate-All-Around (GAA) FET [PDF]
, 2020 In this paper, we reported a non-planar 3-D SONOS memory, GAA (Gate-All-Around) SONOS (Silicon-Oxide-Nitride-Silicon-Oxide) memory according to demands for the high-density and low-power nonvolatile memory.
Kwan-Jae Choi +16 more
core
A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo +4 more
wiley +1 more source