Results 81 to 90 of about 4,456 (178)

Boosting carbon nanotube transistors through γ-ray irradiation. [PDF]

Nat Commun
Zhang K, Gao N, Zhang J, Li Y, Zhao J, Zhou D, Wang X, Liu P, Lin X, Xu H, Peng LM, Zhao W.   +11 more
europepmc   +1 more source

Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application. [PDF]

Biosensors (Basel)
Saha A, Singh S, Dhar RS, Ghosh K, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

Feature Comparison and Process Optimization of Multiple Dry Etching Techniques Applied in Inner Spacer Cavity Formation of GAA NSFET. [PDF]

Nanomaterials (Basel)
Wang M, Guo X, Huang Z, Liao M, Liu T, Xu M.   +5 more
europepmc   +1 more source

Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy. [PDF]

Small Methods
Pondini A, Eyben P, Wouters L, Minj A, Hantschel T, Matagne P, Mitard J, Verhulst A.   +7 more
europepmc   +1 more source

Predictive modeling of drain current in advanced FET architectures using ML-based TCAD calibration. [PDF]

Sci Rep
Mohapatra S, Shekhar R, Jadhav A, Jena B.   +3 more
europepmc   +1 more source

Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]

Sci Rep
Mounika S, Nanda U.
europepmc   +1 more source

Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Kola SR, Li Y.
europepmc   +1 more source

Fabrication of silicon nano wires and gate-all-around MOS devices

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall ...
Bouvet, Didier, Ionescu, Mihai A, Moselund, Kirsten   +2 more
core  

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source