The investigation of the diameter dimension effect on the Si nano-tube transistors
AIP Advances, 2016 The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance.
M.-H. Liao +3 more
doaj +1 more source
Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs [PDF]
, 2014 The metal-gate granularity-induced threshold voltage (V-T) variability and V-T mismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature ...
NAYAK, K +5 more
core +1 more source
Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures [PDF]
, 2023 Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics.
Zhao, Qing-Tai
core
Taming the Distribution of Light in Gate-All-Around Semiconductor Devices [PDF]
Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting ...
Janusz Bogdanowicz (14484792) +7 more
core +1 more source
FinFET to GAA MBCFET: A Review and Insights
IEEE AccessThis review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures.
Rinku Rani Das +2 more
doaj +1 more source
Atomic Layer Deposition (ALD) of Metal Gates for CMOS
Applied Sciences, 2019 The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of ...
Chao Zhao, Jinjuan Xiang
doaj +1 more source
Electrostatic Analysis of Gate All Around (GAA) Nanowire over FinFET [PDF]
, 2017 : CMOS Technology has been scaled down to 7 nm with FinFET replacing planar MOSFET devices. Due to short channel effects, the FinFET structure was developed to provide better electrostatic control on subthreshold leakage and saturation current over ...
core
"Here, you're all good enough to play": Lessons Learned from the GAA Super Games Centre [PDF]
, 2020 Drop out from youth sport participation is a significant issue that has emerged to become a major health concern around the world. In order to counteract drop out trends in sport, organizations responsible for promoting and sustaining participation have ...
Coffee, Pete; id_orcid +5 more
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High threshold voltage matching performance on gate-all-around MOSFET [PDF]
, 2007 International audienceFor the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped
Harrison, S. +8 more
core +1 more source
Effects of high-k dielectric materials on electrical performance of double gate and gate-all-around MOSFET [PDF]
, 2020 This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) MOSFET using different high permittivity (high-k) gate dielectric materials.
Jawatankuasa Kerja PSM UTHM
core +3 more sources