Results 101 to 110 of about 1,279 (182)

The role of the nuclear pore complex in the stability of disease-related short tandem DNA repeats. [PDF]

Nucleic Acids Res
Ollivaud S, Novarina D, Riquelme Barrientos EC, Kazemier HG, Gonera S, Kislanski M, Veenhoff LM, Chang M.   +7 more
europepmc   +2 more sources

Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors. [PDF]

ACS Nano
Bahrami M, Davoudi MR, Verdianu A, Khakbaz P, Waldhoer D, Wilhelmer C, Tang J, Tan C, Nazir A, Zheng Y, Liu C, Peng H, Knobloch T, Waltl M, Grasser T.   +14 more
europepmc   +1 more source

Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]

Sci Rep
Mounika S, Nanda U.
europepmc   +1 more source

Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Kola SR, Li Y.
europepmc   +1 more source

Predictive modeling of drain current in advanced FET architectures using ML-based TCAD calibration. [PDF]

Sci Rep
Mohapatra S, Shekhar R, Jadhav A, Jena B.   +3 more
europepmc   +1 more source

Mechanisms of Film-Formation-Related Defects in EUV Photoresists for Sub-3 nm Nodes and Synergistic Materials-Process-Intelligence Co-Optimization. [PDF]

Micromachines (Basel)
Wu J, Luo Y, Hu J, Li S, Cai S, Cheng T, Zhang P, Li P, Jiang S, Liu Z, Wu G, Kopytov SM, Yang J.   +12 more
europepmc   +1 more source

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Role of Si/dielectric interface traps on the reliability of tree-shaped complementary FETs for sub-3 nm technology nodes. [PDF]

Sci Rep
Thanthri SS, Valasa S, Kotha VR, Mounika B, Vadthiya N.   +4 more
europepmc   +1 more source

Post-Moore two-dimensional integrated electronics for angstrom-nodes. [PDF]

Natl Sci Rev
Shen Z, Zheng Y, Peng F, Wang Y, Peng LM, Qiu C.   +5 more
europepmc   +1 more source