TCAD Simulation of STI Depth and SiO<sub>2</sub>/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]
Lee W, Lee J.
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Kir6.2 channel activity is regulated by interaction of transmembrane domains 1 and 2 through I167 in the bundle-crossing gate. [PDF]
Kawashima R +12 more
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Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]
Lee CH +5 more
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Archaeal family B DNA polymerase facilitates lagging strand DNA replication in the Thermococcales. [PDF]
Liman GLS +10 more
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3-Tier CFET 6T-SRAM with 2D-TMDs channels for Angstrom technology node. [PDF]
Lee J +5 more
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Molecular basis of human taurine transporter uptake and inhibition. [PDF]
Du B, Cheng L, Xie J, Chen L, Yan K.
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Integration and electrical evaluation of WS<sub>2</sub> and MoS<sub>2</sub> fets in a 300 mm pilot line. [PDF]
Schram T +15 more
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Atomic Force Microscopy (AFM)-Based Metrology for Advanced Etching in Three-Dimensional Integrated Circuits. [PDF]
Chang J +4 more
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The Planar Core-Shell Junctionless MOSFET. [PDF]
Dou C +14 more
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Continue the Scaling of Electronic Devices with Transition Metal Dichalcogenide Semiconductors. [PDF]
Zheng F, Meng W, Li LJ.
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