Highly Selective Isotropic Etching of Si to SiGe Using CF<sub>4</sub>/O<sub>2</sub>/N<sub>2</sub> Plasma for Advanced GAA Nanosheet Transistor. [PDF]
Nanomaterials (Basel)Li J, Sun X, Huang Z, Zhang DW.
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An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]
Micromachines (Basel)Zhou H.
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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]
Discov NanoBae SJ +9 more
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Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling. [PDF]
Micromachines (Basel)Tamersit K +3 more
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Ultra-sensitive label-free bio-detection via dielectric-modulated GOSC-SOI-TFET. [PDF]
Sci RepKollapudi SNV, Singh MK.
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Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Nanoscale AdvKang HY +4 more
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From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]
Nanomaterials (Basel)Petkov N, Fagas G.
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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels. [PDF]
Nanomicro LettLiao W +6 more
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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. [PDF]
Micromachines (Basel)Tamersit K +3 more
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Scalable Ising machine composed entirely of Si transistors. [PDF]
Sci AdvYun SY +6 more
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