Results 131 to 140 of about 1,279 (182)

Scatterometry for gate all around (GAA) technology enablement (Conference Presentation)

Metrology, Inspection, and Process Control for Microlithography XXXII, 2018
Future of logic silicon extension lies at the heart of gate all around developments (1). Due to the increasing limitations in further FinFET flow extension, teams around the globe are researching with vertical and horizontal nanowires flavors. Horizontal NW are of great interest due to their integration similarity to the existing FinFET integration ...
Anne-Laure Charley, Hans Mertens, Naoto Horiguchi, Philippe Leray, Nivea Figueiró, Matthew Sendelbach, Roy Koret, Avron Ger, Shay Wolfling   +8 more
openaire   +1 more source

Investigation on cylindrical gate-all-around (GAA) tunnel FETS scaling

2017 IEEE 30th International Conference on Microelectronics (MIEL), 2017
The present work deals with the study and investigation on the GAA Tunnel FET electrical parameters under varying physical conditions, especially, channel thickness t si and length, as well as oxide thickness t ox . Moreover, the effect of the channel doping concentration and the gate work function Φ m .
M. Kessi, A. Benfdila, A. Lakhlef
openaire   +1 more source

Effects of total-dose irradiation on gate-all-around (GAA) devices

IEEE Transactions on Nuclear Science, 1993
The response of gate-all-around (GAA) MOS transistors to dose irradiation is quite different from that observed on other types of silicon-on-insulator (SOI) MOSFETs. In regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation.
J.-P. Colinge, A. Terao
openaire   +1 more source

Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs

Solid-State Electronics, 1998
Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrodinger equations in a self-consistent manner provides the electron wave functions and the energy levels within the device channel.
X. Baie, J.P. Colinge
openaire   +1 more source

Novel Architecture in Gate-All-Around (GAA) MOSFET with High-k Dielectric for Biomolecule Detection

2021
In this chapter, an investigative unique structure of reconfigurable nanowire-based GAA-MOSFET has been developed, which works as biosensor to notice biomolecules such as DNA, protein, cell, enzyme, etc. It performs as both n-type and p-type depending on the polarization of the applied biasing because of its reconfigurable behavior.
Bhol, Krutideepa, Jena, Biswajit, Nanda, Umakanta, Tayal, Shubham, Jain, Amit Kumar   +4 more
openaire   +1 more source

Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

Journal of Nano Research, 2019
The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and
P. Vimala, N.R. Nithin Kumar
openaire   +1 more source

Modelling and simulation of Si and InAs gate all around (GAA) nanowire transistors

2015 Annual IEEE India Conference (INDICON), 2015
Owing to the large increase number of transistors in the CMOS logic due to the unending demand for increase in speed of electronic devices and also low power consumptions, it is becoming difficult to incorporate all the small scaled transistors onto one single plane.
Neel Chatterjee, Sujata Pandey
openaire   +1 more source

Sub-20nm GaAs-based Cylindrical Gate-All-Around FETs for Improved Performance

2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST), 2021
In this work, a cylindrical gate-all-around field-effect transistor (CGAA FET) has been implemented using gallium arsenide (GaAs) as the channel material instead of the conventional silicon material. The investigations based on the simulations using the Atlas tool of the Silvaco TCAD software prompts out that the GaAs-based CGAA FET is capable of ...
Prince Joy Chakraborty, Md. Mossabbarul Islam, Razu Ahamed, Md. Iqbal Bahar Chowdhury   +3 more
openaire   +1 more source

vfTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2016
Beyond 7nm nodes, gate-all-around (GAA) nanowire (NW) is a promising device architecture. However, new architecture can result in intrinsic ESD performance degradation. In this work, we study vfTLP characteristics of GAA ESD devices. Transient analysis bring an in-depth understanding on physical failure mechanism of GAA devices during CDM ESD events.
Shih-Hung Chen, Dimitri Linten, Geert Hellings, Anabela Veloso, Mirko Scholz, Roman Boschke, Guido Groeseneken, Nadine Collaert, Naoto Horiguchi, Aaron Thean   +9 more
openaire   +1 more source

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

IEEE Transactions on Electron Devices, 2011
In this paper, the effects of device orientation, geometry, and strain (uniaxial and biaxial) on the electrostatic properties of different silicon gate-all-around metal-oxide-semiconductor field-effect transistors are thoroughly investigated. We show how the electron density changes with the device orientation and how it depends on the geometry, size ...
Tienda-Luna I.M., Ruiz F.J.G., Godoy A., Biel B., Gamiz F.   +4 more
openaire   +1 more source