Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications. [PDF]
Sci RepMounika S, Nanda U.
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Predictive modeling of drain current in advanced FET architectures using ML-based TCAD calibration. [PDF]
Sci RepMohapatra S +3 more
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Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]
Nanomaterials (Basel)Kola SR, Li Y.
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Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]
Commun EngLee KW +4 more
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Highly Selective Isotropic Etching of Si to SiGe Using CF<sub>4</sub>/O<sub>2</sub>/N<sub>2</sub> Plasma for Advanced GAA Nanosheet Transistor. [PDF]
Nanomaterials (Basel)Li J, Sun X, Huang Z, Zhang DW.
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An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]
Micromachines (Basel)Zhou H.
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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]
Discov NanoBae SJ +9 more
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Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling. [PDF]
Micromachines (Basel)Tamersit K +3 more
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Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Nanoscale AdvKang HY +4 more
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From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]
Nanomaterials (Basel)Petkov N, Fagas G.
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