Results 141 to 150 of about 1,279 (182)
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ECS Meeting Abstracts, 2019
This paper addresses the opportunities and challenges of wet and dry etches in the integration of gate-all-around (GAA) device, which is emerging as a promising solution to replace FinFET [1-3]. For the GAA device fabrication, a quintessential challenge is an isotropic etching of dielectrics, semiconductors, and metals with high selectivity to the ...
Yusuke Oniki +2 more
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This paper addresses the opportunities and challenges of wet and dry etches in the integration of gate-all-around (GAA) device, which is emerging as a promising solution to replace FinFET [1-3]. For the GAA device fabrication, a quintessential challenge is an isotropic etching of dielectrics, semiconductors, and metals with high selectivity to the ...
Yusuke Oniki +2 more
openaire +1 more source
Materials characterization for process integration of multi-channel gate all around (GAA) devices
SPIE Proceedings, 2017Multi-channel gate all around (GAA) semiconductor devices march closer to becoming a reality in production as their maturity in development continues. From this development, an understanding of what physical parameters affecting the device has emerged.
Gangadhara Raja Muthinti +19 more
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Gate-All-Around (GAA) NWFET with L g = 10 nm Simulation
2017According to MOSFET scaling rule, the depletion layer formed in the channel of traditional 2D MOSFET near source and drain, the short-channel effect (SCE) has become inevitable along with the scaling of L g dimension.
Yung-Chun Wu, Yi-Ruei Jhan
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Compact modeling for gate-all-around nanowire tunneling FETs (GAA NW-tFETs)
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012A compact model for gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) is developed based on ballistic transport and charge balancing approaches. To account for the carrier injection to the channel from source/drain (S/D) regions for NW FETs, the density-of-states (DOS) charge, which results in the so-called quantum capacitance, is introduced and
Zhiping Yu +3 more
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Drain current model for a gate all around (GAA) p–n–p–n tunnel FET
Microelectronics Journal, 2013Abstract A two dimensional drain current model has been proposed for a gate all around silicon p–n–p–n (pocket doped or tunnel source) tunnel field effect transistor (TFET) including the influence of drain voltage and source/drain depletion widths.
Rakhi Narang +3 more
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Significant Performance Enhancement in strained channel GaAs Gate-All-Around (GAA) nanowire
2022 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE), 2022Dev Desai +4 more
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Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
SPIE Proceedings, 2016Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate planar, FinFET, and trigate structures. One attractive proposal for making GAA devices involves the use of
Raja Muthinti +13 more
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Challenges and future scope of gate-all-around (GAA) transistors
2023Shobhit Srivastava, Abhishek Acharya
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Gate-All-Around Technology is Coming.
Proceedings of the 2023 International Symposium on Physical Design, 2023openaire +2 more sources