Results 141 to 150 of about 4,456 (178)

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

IEEE Transactions on Electron Devices, 2011
In this paper, the effects of device orientation, geometry, and strain (uniaxial and biaxial) on the electrostatic properties of different silicon gate-all-around metal-oxide-semiconductor field-effect transistors are thoroughly investigated. We show how the electron density changes with the device orientation and how it depends on the geometry, size ...
Tienda-Luna I.M., Ruiz F.J.G., Godoy A., Biel B., Gamiz F.   +4 more
openaire   +1 more source

Materials characterization for process integration of multi-channel gate all around (GAA) devices

SPIE Proceedings, 2017
Multi-channel gate all around (GAA) semiconductor devices march closer to becoming a reality in production as their maturity in development continues. From this development, an understanding of what physical parameters affecting the device has emerged.
Gangadhara Raja Muthinti, Nicolas Loubet, Robin Chao, Abraham A. de la Peña, Juntao Li, Michael A. Guillorn, Tenko Yamashita, Sivananda Kanakasabapathy, John Gaudiello, Aron J. Cepler, Matthew Sendelbach, Susan Emans, Shay Wolfling, Avron Ger, Daniel Kandel, Roy Koret, Wei Ti Lee, Peter Gin, Kevin Matney, Matthew Wormington   +19 more
openaire   +1 more source

Gate-All-Around (GAA) NWFET with L g = 10 nm Simulation

2017
According to MOSFET scaling rule, the depletion layer formed in the channel of traditional 2D MOSFET near source and drain, the short-channel effect (SCE) has become inevitable along with the scaling of L g dimension.
Yung-Chun Wu, Yi-Ruei Jhan
openaire   +1 more source

Compact modeling for gate-all-around nanowire tunneling FETs (GAA NW-tFETs)

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
A compact model for gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) is developed based on ballistic transport and charge balancing approaches. To account for the carrier injection to the channel from source/drain (S/D) regions for NW FETs, the density-of-states (DOS) charge, which results in the so-called quantum capacitance, is introduced and
Zhiping Yu, Ling Li, Li Zhang, Jinyu Zhang   +3 more
openaire   +1 more source

An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET)

SPIE Proceedings, 2012
An analytical model for a gate all around (GAA) Tunnel Field Effect Transistor (TFET) having circular and square cross section geometry has been proposed in this work describing the important device electrostatic parameters i.e. Surface Potential, Electric Field and Energy Band profile.
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta   +3 more
openaire   +1 more source

Novel hybrid metrology for process integration of gate all around (GAA) devices (Conference Presentation)

Metrology, Inspection, and Process Control for Microlithography XXXII, 2018
Multi-channel gate all around (GAA) semiconductor devices require measurements of more target parameters than FinFET devices, due in part to the increased complexity of the different structures needed to fabricate nanosheet devices. In some cases, multiple measurement techniques are required to be used in a hybrid-metrology technique in order to ...
Gangadhara R. Muthinti, Nicolas J. Loubet, Robinhsinkuo Chao, Abraham Arceo de la Peña, Dexin Kong, Juntao Li, Brock Mendoza, Veeraraghavan Basker, Tenko Yamashita, John Gaudiello, Matthew Sendelbach, Aron J. Cepler, Susan Ng-Emans, Gilad Barak, Wei Ti Lee   +14 more
openaire   +1 more source

Significant Performance Enhancement in strained channel GaAs Gate-All-Around (GAA) nanowire

2022 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE), 2022
Dev Desai, Nirmal Lunagariya, Hiral Vasara, Prakash Chandra, Shantanu Agnihotri   +4 more
openaire   +1 more source

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)

SPIE Proceedings, 2016
Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate planar, FinFET, and trigate structures. One attractive proposal for making GAA devices involves the use of
Raja Muthinti, Nicolas Loubet, Robin Chao, John Ott, Michael Guillorn, Nelson Felix, John Gaudiello, Parker Lund, Aron Cepler, Matthew Sendelbach, Oded Cohen, Shay Wolfling, Cornel Bozdog, Mark Klare   +13 more
openaire   +1 more source

Challenges and future scope of gate-all-around (GAA) transistors

2023
Shobhit Srivastava, Abhishek Acharya
openaire   +1 more source

Gate-All-Around Technology is Coming.

Proceedings of the 2023 International Symposium on Physical Design, 2023
openaire   +1 more source