Results 141 to 150 of about 4,617 (218)

Scalable Ising machine composed entirely of Si transistors. [PDF]

Sci Adv
Yun SY, Kim JP, Jeong J, Lee SW, Chung YS, Kim S, Choi YK.   +6 more
europepmc   +1 more source

High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels. [PDF]

Nanomicro Lett
Liao W, Qian W, An J, Liang L, Hu Z, Wang J, Yu L.   +6 more
europepmc   +1 more source

Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments. [PDF]

Micromachines (Basel)
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M.   +3 more
europepmc   +1 more source

Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Kim S, Kim HM, Kwon KR, Kwon D.
europepmc   +1 more source

The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]

PLoS One
Shubham, Pandey RK.
europepmc   +1 more source

Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor. [PDF]

Sci Rep
Aghajani A, Karsenty A.
europepmc   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS₂ Field Effect Transistors. [PDF]

Adv Mater
Liu L, Yan H, Loh L, Paul KK, Sarkar S, Biswas D, Lee TL, Taniguchi T, Watanabe K, Chhowalla M, Wang Y.   +10 more
europepmc   +1 more source

Correction: Hsieh et al. Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits. <i>Micromachines</i> 2020, <i>11</i>, 741. [PDF]

Micromachines (Basel)
Hsieh TY, Hsieh PY, Yang CC, Shen CH, Shieh JM, Yeh WK, Wu MC.   +6 more
europepmc   +1 more source

Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors. [PDF]

Nat Commun
Islam MM, Cho Y, Sen A, Bisht P, Shim J, Oh JO, Park G, Rossi A, Lee H, Jiang L, Coletti C, Park BI, Chae H, Shin S, Park H, Kim S.   +15 more
europepmc   +1 more source

Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS. [PDF]

ACS Nano
Song T, Kang S, Kuo YH, Chen J, Fernandes L, Afroze N, Tian M, Baac HW, Shin C, Khan AI.   +9 more
europepmc   +1 more source