Results 31 to 40 of about 4,456 (178)

Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs

, 2022
Device guidelines for reducing power with punch-through current annealing in gate-all-around (GAA) FETs were investigated based on three-dimensional (3D) simulations.
Jun-Young Park, Min-Kyeong Kim, Yang-Kyu Choi   +2 more
core   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Advances in Natural Sciences: Nanoscience and Nanotechnology, 2015
In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (M) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed.
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu, S K Mohapatra   +5 more
openaire   +1 more source

Impact of Ions and Radicals on Etch Selectivity and Fluorocarbon Polymerization in the Selective Dry Etching of Si0.7Ge0.3

Plasma Processes and Polymers, Volume 23, Issue 6, June 2026.
Ion screening in CF4 plasma reduces CFx+ ion flux while maintaining radical fluxes, suppressing fluorocarbon polymer accumulation. This enables smooth SiGe etching with selectivity up to 30:1 in multilayer stacks. ABSTRACT Selective etching of Si0.7Ge0.3 was investigated in CF4 inductively coupled plasma using an ion‐screening approach to decouple ion ...
Joosung Kang, Yongjoon Choi, Dongmin Yoon, Jihye Kim, U‐In Chung, Jeonghoon Son, Dae‐Hong Ko   +6 more
wiley   +1 more source

Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor

, 2023
Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into ...
Chunlai Li, Ziang Xie, Xie, Ziang, Laixiang Qin, He, Jin, Qin, Laixiang, Yiqun Wei, Jin He, Li, Chunlai, Wei, Yiqun   +9 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Edge effects characterization in gate-all-around SOI MOSFETs

, 1998
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis, Vandooren, Anne, Cristoloveanu, Sorin, IEEE International SOI Conference 1998, Colinge, Jean-Pierre   +4 more
core   +1 more source

Radiotherapy Enhancement by Gold Nanocluster‐functionalized Nanoliposomes Using Polychromatic Orthovoltage X‐ray Irradiation

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
Lipid drug carriers to which ultra‐small gold nanoparticles were added enabled more efficient radiotherapy of cultured pancreatic cancer tumors. These nanoparticles boosted radiation‐induced damage to tumors by generating more reactive molecules, though higher gold levels are needed for strong benefits.
Nazareth Milagros Carigga Gutierrez, Eaazhisai Kandiah, Sofia Leo, Erwan Dupont, Fabrizio Johnson‐Corrales, Marc‐André Hograindleur, Sarvenaz Keshmiri, Hélène Elleaume, Benoit Busser, Romain Haudecoeur, Véronique Jacob, Anthony Vella, Véronique Josserand, Maxime Henry, Jean‐Luc Coll, Amandine Hurbin, Xavier Le Guével, Mans Broekgaarden   +17 more
wiley   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

Advanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie, Lara Franchin, Ludovica Pradetto Battel, Stefano Bonaldo, Alessandro Paccagnella, Biagio di Vizio, Stefano Agnoli, Rafael C. Hensel, Antonio Gaetano Ricciardulli, Simone Battiston, Mauro Sambi, Francesco Sedona, Paolo Samorì, Stefano Casalini   +13 more
wiley   +1 more source

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

, 2018
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit, Martinie, S., N. Rambal, T. Ernst, C. Vizioz, S. Martinie, B. Previtali, Vinet, M., A. Jannaud, Lacord, J., Rozeau, O., Hartmann, J.-M., S. Barraud, J. Lacord, N. Bernier, Loup, V., Romano, G., L. Dourthe, Vizioz, C., Audoit, G., J.-M. Hartmann, G. Romano, Chalupa, Z., Previtali, B., Rambal, N., Lapras, V., Barraud, S., O. Rozeau, Bernier, N., Balan, V., V. Lapras, Ernst, T., M. Vinet, Jannaud, A., Z. Chalupa, V. Delaye, Dourthe, L., Casse, M., Delaye, V., V. Loup, M. Casse, V. Balan   +41 more
core   +1 more source