Results 31 to 40 of about 4,617 (218)

Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime [PDF]

Journal of Nano- and Electronic Physics, 2021
У роботі розглядається GAA MOSFET n-типу з різними довжинами затвора від 90 до 12 нм. Температурно-залежне моделювання проводиться з метою детального дослідження електричних характеристик. Діапазон температур, використаний у роботі, варіюється від 6 до 700 К, включаючи кріогенну температуру, і досліджується поведінка GAA MOSFET як напівпровідникового ...
Lakshmana Kumar, M., Biswajit, Jena
openaire   +2 more sources

The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor

Journal of Nano- and Electronic Physics, 2022
Починаючи з епохи Мура, для покращення електричних характеристик було введено використання передової архітектури пристроїв з наноматеріалів. У роботі повідомляється про дослідження характеристик довгоканального GaAs JGAA транзистора, включаючи квантово-механічний ефект.
Rasol, M. Faidzal, T., Ainun, H., Fatimah, J., Zaharah, S. Z. A., Mastura, A., Rashidah, A. Riyad, Munawar   +6 more
openaire   +3 more sources

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs

IEEE Journal of the Electron Devices Society, 2021
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists of hafnium dioxide (HfO2) and silicon dioxide (SiO2), which has high
Young Suh Song, Jang Hyun Kim, Garam Kim, Hyun-Min Kim, Sangwan Kim, Byung-Gook Park   +5 more
doaj   +1 more source

A comparison of performance between double-gate and gate-all-around nanowire mosfet [PDF]

, 2019
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem.
Hamid, Fatimah A., Razali, M. Anas, A.Hamid, Fatimah, Kosmani, Nor Fareza, Fareza Kosmani, Nor   +4 more
core   +2 more sources

A Simulation Study of Gate-All-Around Nanowire Transistor With a Core-Substrate

IEEE Access, 2020
In this letter, a novel Core-Substrate Gate-All-Around (CSGAA) nanowire structure has been proposed, investigated and simulated systematically based on 3D numerical simulation. This new structure is characterized by a Core-Substrate directly connected to
Ke Han, Yannan Zhang, Zhongliang Deng
doaj   +1 more source

GAA repeat expansion mutation mouse models of Friedreich ataxia exhibit oxidative stress leading to progressive neuronal and cardiac pathology [PDF]

, 2006
Friedreich ataxia (FRDA) is a neurodegenerative disorder caused by an unstable GAA repeat expansion mutation within intron 1 of the FXN gene. However, the origins of the GAA repeat expansion, its unstable dynamics within different cells and tissues, and ...
Pinto, Ricardo Mouro, Blake, Julian, Al-Mahdawi, S, Lowrie, Margaret B., Hughes, Sian, Pook, Mark A., Webster, Zoe, Varshney, Dhaval, Pook, MA, Lawrence, Lorraine, King, Rosalind, Cooper, J. Mark, Al-Mahdawi, Sahar, Mouro Pinto, R   +13 more
core   +1 more source

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

IEEE Journal of the Electron Devices Society, 2019
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure.
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu   +7 more
doaj   +1 more source

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Nanoscale Research Letters, 2022
In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes.
Yiming Li, Min-Hui Chuang, Yu-Chin Tsai
doaj   +1 more source

Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor [PDF]

, 2023
Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into ...
Chunlai Li, Ziang Xie, Xie, Ziang, Laixiang Qin, He, Jin, Qin, Laixiang, Yiqun Wei, Jin He, Li, Chunlai, Wei, Yiqun   +9 more
core   +1 more source