Results 11 to 20 of about 4,456 (178)
Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier [PDF]
, 2023 This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit.
Amandeep Singh +11 more
core +1 more source
, 2021 This paper covers the Performance analysis of the Junctionless Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junctionless Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data.
PSIT COE, H (via Mendeley Data)
core +1 more source
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]
, 2012 We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A. +10 more
core +1 more source
Parametric Data Study of High-k Gate with Dielectric Pocket(DP) Gate All Around(GAA) FETs
, 2021 This paper presents the parameteric data study of the High-k Gate stack with Dielectric Pocket(DP) Gate All Around(GAA) FETs. A High K gate stack and dielectric pockets inside the channel have been used as a performance booster in the device.
PSIT COE, H (via Mendeley Data)
core +1 more source
Reliability Analysis Of Gate-All-Around Floating Gate (GAA-FG) With Variable Oxide Thickness For Flash Memory Cell [PDF]
, 2020 In this work, a concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low-k/high-k stack is implemented in Gate-All-Around Floating Gate (GAA-FG) memory cell to reduce P/E operational voltage, improve the efficiency of data ...
Farah Hamid +13 more
core +1 more source
Sub‑5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
, 2023 The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture.
Ruge Quhe (1619785) +9 more
core +1 more source
Optimization of 3D Stacked Nanosheets in 5nm Gate-all-around Transistor Technology
, 2021 An optimization study of silicon gate-all-around (GAA) devices based on technology computer-aided design tools is presented in this paper. GAA technology guidelines and solutions are provided for low power applications in the 5 nm CMOS technology node ...
Gundu, Anil Kumar +3 more
core +1 more source
, 2020 This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate ...
Yannan Zhang +4 more
core +1 more source
GAA super game centre research report [PDF]
, 2015 First paragraph: Drop out from youth sport participation is a global issue that has emerged to become a major public health concern around the world. The initial catalyst for this multi-year research effort stemmed from a trend within GAA participation ...
Lavallee, David +2 more
core
Clinical Pharmacology &Therapeutics, EarlyView.One‐third of epilepsy patients remain treatment‐resistant, underscoring the need for novel anti‐seizure medications (ASMs) and reliable biomarkers of central target engagement. Cortical hyperexcitability is a hallmark of epilepsy, making excitability a valuable pharmacodynamic biomarker for early‐phase drug development supporting go/no‐go decision ...
Catherine M. E. de Cuba +7 more
wiley +1 more source