DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures [PDF]
Le Journal de Physique IV, 1994 This paper describes the static I-V characteristics at cryogenic temperatures (77 K and 4.2 K) of so-called dual-gate Silicon-on-Insulator (SOI) MOSFETs, fabricated in the Gate-all-Around (GAA) technology. The n-channel devices are characterised by an increase of the threshold voltage and the transconductance upon cooling, which is observed both for ...
Simoen, E., Claeys, C.
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A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications [PDF]
Micromachines, 2020 This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate ...
Ke Han +4 more
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Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application [PDF]
Facta universitatis - series: Electronics and Energetics, 2015 Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length ( L g), channel thickness ( t Si ), and gate work function ( φ M ) on various ...
Biswajit Jena +5 more
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EFFECT OF PROCESS PARAMETER VARIATION ON ft IN CONVENTIONAL AND JUNCTIONLESS GATE-ALL-AROUND DEVICES [PDF]
Journal of Engineering Science and Technology, 2015 In this paper we have studied the effect of process variations on unity gain cut- off frequency (ft) in conventional and junctionless gate-all-around (GAA) transistors using TCAD simulations. Three different geometrical parameters, channel doping, source/
B. LAKSHMI, R. SRINIVASAN
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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability [PDF]
IEEE Journal of the Electron Devices Society, 2018 Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are
Daniel Nagy +5 more
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Performance analysis of the Junction-less Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junction-less Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data [PDF]
, 2021 This paper covers the Performance analysis of the Junctionless Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junctionless Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data.
PSIT COE, H (via Mendeley Data)
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Parametric Data Study of High-k Gate with Dielectric Pocket(DP) Gate All Around(GAA) FETs [PDF]
, 2021 This paper presents the parameteric data study of the High-k Gate stack with Dielectric Pocket(DP) Gate All Around(GAA) FETs. A High K gate stack and dielectric pockets inside the channel have been used as a performance booster in the device.
PSIT COE, H (via Mendeley Data)
core +1 more source
Nanomaterials, 2021 In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated.
Qingzhu Zhang +18 more
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Micromachines, 2023 In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated.
Jingwen Yang +12 more
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Sub‑5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices [PDF]
, 2023 The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture.
Ruge Quhe (1619785) +9 more
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