Results 231 to 240 of about 81,608 (254)

Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions

IEEE Electron Device Letters, 2002
Chenming Hu, Yee-Chia Yeo, P Ranade
exaly  

Copper gate AlGaN/GaN HEMT with low gate leakage current

IEEE Electron Device Letters, 2003
Jin-Ping Ao, Y Naoi
exaly  

Carbon Nanotube Complementary Wrap-Gate Transistors

Nano Letters, 2013
Hiroyuki Miyazoe, Aaron Franklin, George Tulevski   +2 more
exaly  

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2019
Wei Jin, Kevin J Chen, Kailun Zhong
exaly  

Method for fabricating a gate all around device

2014
COLINGE JEAN-PIERRE, CHING KUO-CHENG, WU ZHIQIANG   +2 more
openaire   +2 more sources

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

IEEE Transactions on Electron Devices, 2006
M Kuraguchi, I Omura
exaly  

Leaky Gate Model: Intensity-Dependent Coding of Pain and Itch in the Spinal Cord

Neuron, 2017
Qian Xu, Changxiong Guo, Xinzhong Dong   +2 more
exaly  

Aligned gate-all-around structure

2015
CHING KUO-CHENG, COLINGE JEAN-PIERRE, WU ZHIQIANG   +2 more
openaire   +2 more sources

GATE-ALL-AROUND NANOWIRE FIELD EFFECT TRANSISTORS

2011
BANGSARUNTIP SARUNYA, CHANG JOSEPHINE B, COHEN GUY M, SLEIGHT JEFFREY W   +3 more
openaire   +2 more sources

Gate all around device

WANG YUNG-CHIH, LIAO YU-CHIEH, YANG TAI-I, CHEN HSIN-PING   +3 more
openaire   +1 more source