Results 1 to 10 of about 2,829 (212)

An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]

Micromachines (Basel)
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits.
Zhou H.
europepmc   +2 more sources

Self-Therapeutic Cobalt Hydroxide Nanosheets (Co(OH)₂ NS) for Ovarian Cancer Therapy [PDF]

ACS Omega, 2021
High-grade serous ovarian cancer (HGSOC) is one of the major life-threatening cancers in women, with a survival rate of less than 50%. So far, chemotherapy is the main therapeutic tool to cure this lethal disease; however, in many cases, it fails to cure HGSOC even with severe side effects.
Adeel M., Parisi S., Mauceri M., Asif K., Bartoletti M., Puglisi F., Caligiuri I., Rahman M. M., Canzonieri V., Rizzolio F.   +9 more
openaire   +5 more sources

Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs

, 2022
Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation.
Dong-Hyun Wang, Jun-Young Park, Park, Jun-Young, Wang, Dong-Hyun, Lee, Khwang-Sun, Khwang-Sun Lee   +5 more
core   +1 more source

Undoped and Zn-doped NiO nanosheet/nanoflower-like films-based humidity sensor fabricated via immersion method [PDF]

, 2021
The nickel oxide (NiO) nanosheet/nanoflower-like (NS/NF) films-based humidity sensors doped with zinc (Zn) and without doping were successfully deposited on the NiO seed layer-coated glass substrates using the immersion method.
M.H.Mamat, Norfarariyanti Parimon, M.Rusop   +2 more
core   +1 more source

Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

, 2022
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through ...
Jae-Hak Lee, Ji-Min Baek, Sang-Tae Lee, Wan-Soo Park, Su-Min Choi, Jae-Gyu Kim, Hyeon-Bhin Jo, Hyo-Jin Kim, Dae-Hong Ko, Jung-Hee Lee, Sang-Kuk Kim, Jacob Yun, In-Geun Lee, Kwang-Seok Seo, Tae-Woo Kim, Ted Kim, Dae-Hyun Kim, Ji-Hoon Yoo, Chan-Soo Shin   +18 more
core   +1 more source

7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

, 2020
International audienceIn this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA) nanosheet transistors with a record number of stacked channels.
C. Perrot, F. Andrieu, C. Vizioz, B. Previtali, A. Jannaud, J. Sturm, Hartmann, J., S. Barraud, R. Kies, Lassarre, J., Kies, R., Andrieu, F., Ph. Rodriguez, N. Bernier, Loup, V., Perrot, C., Romano, G., Vizioz, C., G. Romano, Previtali, B., Barraud, S., J. Lassarre, Magalhaes-Lucas, A., Bernier, N., Grenier, A., J. M. Hartmann, Sturm, J., Rodriguez, Ph., Jannaud, A., A. Grenier, Casse, M., V. Loup, M. Casse, A. Magalhaes-Lucas   +33 more
core   +1 more source

A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

, 2022
Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light
Kun Chen, Min Xu, David Wei Zhang, Xin Sun, Tao Liu, Ziqiang Huang, Jingwen Yang, Hailong Hu, Chen Wang, Saisheng Xu, Dawei Wang   +10 more
core   +2 more sources

Integration of HfO2 -based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory

, 2023
International audienceIn this study, we demonstrate a fully CMOS compatible co-integration of Gate-All-Around (GAA) stacked-NanoSheet (NS) transistors with HfO 2 -based OxRAM cells for high-density embedded memory.
Gharbi, A., Anotta, A., Barraud, S., Magalhaes-Lucas, A., Boulard, F., Martin, S., Sturm, J., Sarrazin, A., Dubreuil, T., Hartmann, J.-M., Castellani, N., Andrieu, F., Pedini, J.-M., Souhaité, A., Lambert, A.   +14 more
core   +1 more source

Metal- and Pyrolysis-Free Ionic Covalent Organic Framework Nanosheet for Efficient Oxygen Evolution Reaction

, 2023
Metal-free electrocatalysts for oxygen evolution reaction (OER) are crucial to enable practical water splitting for future clean energy production. The preparation of such electrocatalysts remains a great challenge because they are difficult to obtain a ...
Jialong, Song, Xinyu, Guan, Shilun, Qiu, Leibo, Li, Liangkui, Zhu, Zhuochen, Yu, Jinquan, Suo, Rui, Wang, Ziqi, Zhang, Yusran, Yusran, Valentin, Valtchev, Li, Liao, Qianrong, Fang   +12 more
core   +1 more source

Controllable In Situ Transformation of Layered Double Hydroxides into Ultrathin MetalOrganic Framework Nanosheet Arrays for Energy Storage

, 2022
Ultrathin two-dimensional metal–organic frameworks (MOFs) have convincing performances in energy storage, which can be put down to their accessible active sites with rapid charge transfer.
Jiachao Zhou, Yuanyuan Ling (8793764), Kai Tao, Yuanyuan Ling, Kang Chen, Lei Han, Yingchao Wang (2805157), Jiachao Zhou (10699935), Wenna Zhao (2416729), Kang Chen (285159), Lei Han (150108), Yingchao Wang, Kai Tao (54204), Wenna Zhao   +13 more
core   +1 more source