Results 11 to 20 of about 271,965 (237)

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2019
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and ...
Yu-Ru Lin, Yu-Hsien Lin, Yi-Yun Yang, Yung-Chun Wu   +3 more
doaj   +2 more sources

A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

National Science Open, 2022
Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light
Huang Ziqiang, Liu Tao, Yang Jingwen, Sun Xin, Chen Kun, Wang Dawei, Hu Hailong, Xu Min, Wang Chen, Xu Saisheng, Zhang David Wei   +10 more
doaj   +3 more sources

On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

Micromachines, 2022
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic ...
Jonghyeon Ha, Gyeongyeop Lee, Hagyoul Bae, Kihyun Kim, Jin-Woo Han, Jungsik Kim   +5 more
doaj   +2 more sources

Detection of odor quality and ripening stage of Mangifera indica L. by graphdiyne nanosheet - a DFT outlook

Condensed Matter Physics, 2020
Using first-principles calculation, geometrical stability together with electronic properties of graphdiyne nanosheet (Gdn-NS) is investigated. The structural stability of Gdn-NS is established with the support of phonon band structure and cohesive ...
V. Nagarajan, R. Chandiramouli
doaj   +2 more sources

A Review of Reliability in Gate-All-Around Nanosheet Devices

Micromachines
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET ...
Miaomiao Wang
doaj   +2 more sources

The Fluorescent Detection of Alkaline Phosphatase Based on Iron Nanoclusters and a Manganese Dioxide Nanosheet

Sensors
Fluorescent iron nanoclusters are emerging fluorescent nanomaterials. Herein, we synthesized hemoglobin-coated iron nanoclusters (Hb−Fe NCs) with a significant fluorescence emission peak at 615 nm and investigated the inner-filter effect of fluorescence ...
Liang Zhao, Xinyue Liu, Xinwen Zhang, Siyu Liu, Jiazhen Wu   +4 more
doaj   +2 more sources

Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Scientific Reports
In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p-
Jongseong Han, Jaemin Son, Seungho Ryu, Kyoungah Cho, Sangsig Kim   +4 more
doaj   +2 more sources

An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors

Micromachines
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits.
Huimei Zhou
doaj   +2 more sources

Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

Advanced Electronic Materials
In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features
Yunwoo Shin, Jaemin Son, Juhee Jeon, Seungho Ryu, Kyoungah Cho, Sangsig Kim   +5 more
doaj   +2 more sources

Surface-Selective Pt Enrichment for Stabilizing Ultrathin 2D PtCu Nanosheets Toward Durable Oxygen Reduction. [PDF]

Adv Sci (Weinh)
Ultrathin 2D alloy nanosheet catalysts could offer exceptional catalytic activity but suffer from severe structural instability. Here, a surface‐selective Pt enrichment strategy via galvanic replacement effectively stabilizes PtCu Nanosheets while preserving their ∼ 1 nm thickness and (111) facets.
Yang HJ, Lee S, Lee K, Chang H, Yang HT, Shin D, Kim M, Cho E.   +7 more
europepmc   +2 more sources